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Kaichen Yu

Publications and source records attributed to Kaichen Yu.

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Setoka: A Benchmark for Hierarchical User Understanding in Personalized Agents over Heterogeneous Data

Personalized agents are increasingly applied to assist users across a wide range of tasks. Effective personalized assistance requires not only retrieving explicit facts from past interactions stored in agent memory, but also inferring abstract personal characteristics. However, existing memory benchmarks primarily evaluate whether an agent can retrieve information explicitly stated in conversational histories, failing to provide an effective assessment of deeper user understanding. In this work, we propose Setoka, a benchmark for evaluating memory-augmented personalized agents with hierarchical user understanding from heterogeneous data. Grounded in theories from cognitive and personality psychology, Setoka defines four levels of user understanding, i.e., semantic memory, episodic memory, behavior pattern, and personality trait. Moreover, to enable realistic yet privacy-preserving evaluation, we design a psychometrics-based pipeline that synthesizes diverse, coherent heterogeneous user data and queries at scale. Finally, we leverage Setoka to evaluate 3 language models combined with 5 memory systems for 10 synthetic users. Our comprehensive evaluation reveals that while existing systems perform well on semantic memory retrieval, their performance declines on episodic memory. Moreover, when dealing with behavior pattern and personality trait understanding tasks that require integrating heterogeneous and fragmented information dispersed over time, performance declines even further. These findings demonstrate that user understanding cannot be handled by simple fact retrieval, motivating the design of memory mechanisms for cross-source integration and abstraction over long-term user behavior.

cs.AI

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics.

cond-mat.mes-hall