arXiv subjects

Kaifei Kang

Publications and source records attributed to Kaifei Kang.

18 recordsLinked to original sources

arXiv2026

Ising Dirac fermions across a topological phase transition

Dirac fermions have attracted significant interest due to their relativistic dispersions and close connections to topological physics, yet they are generally expected to be gapped in two-dimensional systems with strong Ising spin orbit coupling, making their realization in such materials an outstanding challenge. Here we report the emergence of six fold degenerate Dirac fermions in an Ising moire system across a quantum spin Hall transition in twisted WSe2. In a 3.65 degree device, we observe a quantum spin Hall phase at high electric fields with nearly quantized resistance h/(2e2), and a Dirac semimetal phase over a broad range of electric fields near zero field. Magnetotransport measurements of the Dirac phase exhibit a half-integer Landau fan sequence, characteristic of Dirac fermions, with six-fold degeneracy on the hole-doped side and two fold degeneracy on the electron-doped side. Temperature dependence shows weakly metallic behavior consistent with a semimetallic state. Our twist-angle-dependent transport measurements map out a complete phase diagram and identify a critical twist angle of 3.3 degree, establishing the phase boundary between the quantum spin Hall and Dirac semimetal regimes. Our work establishes a new route to realizing Dirac fermions in strongly spin orbit coupled moire systems through a topological phase transition, providing a promising platform for high mobility spintronics.

cond-mat.mes-hall↗

arXiv2026

Observation of a Mott quantum spin Hall insulator in twisted WSe2

Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respectively. Here, we report the observation of QSH edge transport in a magnetic-field-stabilized Mott insulating state at half filling of the second moire band in a 2.29 degree twisted WSe2 device. This state exhibits a resistance plateau identical to that of the single-particle QSH state at full filling of the first moire valence band, indicating the same number of helical edge channels. Electrical transport measurements reveal nearly quantized resistance that is insensitive to vertical electric field, out-of-plane magnetic field, and temperature below 5 K. Pronounced nonlocal transport and strong negative in-plane magnetoconductance further support helical edge conduction, establishing robust edge transport in the strongly correlated regime. Temperature-dependent Hall measurements reveal a characteristic temperature scale of approximately 10 K, corresponding to an energy scale of about 1 meV. Our results demonstrate that spin-conserved QSH edge states can persist in a half filled, strongly correlated insulating phase and under external magnetic field, opening a route toward interaction-resilient topological transport in moire quantum materials.

cond-mat.mes-hall↗

arXiv2025

Time-reversal symmetry breaking fractional quantum spin Hall insulator in moiré MoTe2

Twisted bilayer transition metal dichalcogenide semiconductors, which support flat Chern bands with enhanced interaction effects, realize a platform for fractional Chern insulators and fractional quantum spin Hall (FQSH) insulators. A recent experiment has reported the emergence of a FQSH insulator protected by spin-Sz conservation at a moiré lattice filling factor ν=3 in 2.1-degree twisted bilayer MoTe2. Theoretical studies have proposed both time-reversal symmetric and asymmetric ground states as possible candidates for the observed FQSH insulator, but the nature of the state remains unexplored. Here we report the observation of spontaneous time-reversal symmetry breaking at generic fillings in 2.1-degree twisted bilayer MoTe2 from ν<1 all the way to ν>6 except at ν=2, 4, and 6. Although zero Hall response is observed at ν=3 for magnetic fields higher than 20 mT, a finite anomalous Hall response accompanied by a magnetic hysteresis is observed at lower magnetic fields, demonstrating spontaneous time-reversal symmetry breaking. Our work shows the tendency towards ferromagnetism by doping the first three pairs of conjugate Chern bands in the material; it also sheds light on the nature of the FQSH insulator at ν=3.

cond-mat.mes-hall↗

arXiv2024

Observation of the fractional quantum spin Hall effect in moiré MoTe2

Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G0=e^2/h. Here we report transport evidence of a fractional QSH insulator in 2.1-degree-twisted bilayer MoTe2, which supports spin-Sz conservation and flat spin-contrasting Chern bands. At filling factor v = 3 of the moiré valence bands, each edge contributes a conductance 3/2 G0 with zero anomalous Hall conductivity. The state is likely a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Further, at v = 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G0, 2G0 and 3G0, respectively. Our results open up the possibility of realizing time reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moiré materials.

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arXiv2024

Observation of the double quantum spin Hall phase in moiré WSe2

Quantum spin Hall (QSH) insulators are a topologically protected phase of matter in two dimensions that can support non-dissipative spin transport. A hallmark of the phase is a pair of helical edge states surrounding an insulating bulk. A higher (even) number of helical edge state pairs is usually not possible in real materials because spin mixing would gap out the edge states. Multiple pairs of helical edge states have been proposed in materials with spin conservation symmetry and high spin Chern bands, but remained experimentally elusive. Here, we demonstrate a QSH phase with one and two pairs of helical edge states in twisted bilayer WSe2 at moiré hole filling factor ν= 2 and 4, respectively. We observe nearly quantized conductance or resistance plateaus of h/(νe^2 ) at ν = 2 and 4 while the bulk is insulating. The conductance is nearly independent of out-of-plane magnetic field and decreases under an in-plane magnetic field. We also observe nonlocal transport, which is sensitive only to the in-plane magnetic field. The results agree with quantum transport of helical edge states protected by Ising spin conservation symmetry and open a promising platform for low-power spintronics.

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arXiv2023

Integer and fractional Chern insulators in twisted bilayer MoTe2

Chern insulators, which are the lattice analogs of the quantum Hall states, can potentially manifest high-temperature topological orders at zero magnetic field to enable next-generation topological quantum devices. To date, integer Chern insulators have been experimentally demonstrated in several systems at zero magnetic field, but fractional Chern insulators have been reported only in graphene-based systems under a finite magnetic field. The emergence of semiconductor moiré materials, which support tunable topological flat bands, opens a new opportunity to realize fractional Chern insulators. Here, we report the observation of both integer and fractional Chern insulators at zero magnetic field in small-angle twisted bilayer MoTe2 by combining the local electronic compressibility and magneto-optical measurements. At hole filling factor ν=1 and 2/3, the system is incompressible and spontaneously breaks time reversal symmetry. We determine the Chern number to be 1 and 2/3 for the ν=1 and ν=2/3 gaps, respectively, from their dispersion in filling factor with applied magnetic field using the Streda formula. We further demonstrate electric-field-tuned topological phase transitions involving the Chern insulators. Our findings pave the way for demonstration of quantized fractional Hall conductance and anyonic excitation and braiding in semiconductor moiré materials.

cond-mat.mes-hall↗

arXiv2023

Quantum Transport in Graphene Using Surface Acoustic Wave Resonators

Surface acoustic waves (SAWs) provide a contactless method for measuring the wavevector-dependent conductivity. This technique has been used to discover emergent length scales in the fractional quantum Hall regime of traditional, semiconductor-based heterostructures. SAWs would appear to be an ideal match for van der Waals (vdW) heterostructures, but the right combination of substrate and experimental geometry to allow access to the quantum transport regime has not yet been found. We demonstrate that SAW resonant cavities fabricated on LiNbO$_3$ substrates can be used to access the quantum Hall regime of high-mobility, hexagonal boron nitride (hBN) encapsulated graphene heterostructures. Our work establishes SAW resonant cavities as a viable platform for performing contactless conductivity measurements in the quantum transport regime of vdW materials.

cond-mat.mes-hall↗

arXiv2022

Gate-tunable heavy fermions in a moiré Kondo lattice

The Kondo lattice, describing a matrix of local magnetic moments coupled via spin-exchange interactions to itinerant conduction electrons, is a prototype of strongly correlated quantum matter. Traditionally, Kondo lattices are realized in intermetallic compounds containing lanthanide or actinide. The complex electronic structure and limited tunability of both the electron density and exchange interactions in these bulk materials pose significant challenges to study Kondo lattice physics. Here, we report the realization of a synthetic Kondo lattice in AB-stacked MoTe2/WSe2 moiré bilayers, where the MoTe2 layer is tuned to a Mott insulating state, supporting a triangular moiré lattice of local moments, and the WSe2 layer is doped with itinerant conduction carriers. We observe heavy fermions with a large Fermi surface below the Kondo temperature. We also observe destruction of the heavy fermions by an external magnetic field with an abrupt decrease of the Fermi surface size and quasiparticle mass. We further demonstrate widely and continuously gate-tunable Kondo temperatures through either the itinerant carrier density or Kondo interaction. Our study opens the possibility of in-situ access to the rich phase diagram of the Kondo lattice with exotic quantum criticalities in a single device based on semiconductor moiré materials

cond-mat.str-el↗

arXiv2022

Switchable moiré potentials in ferroelectric WTe2/WSe2 superlattices

Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and moiré band insulating states and the associated nonlinear anomalous Hall effect by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centered-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, which possess very different moiré potential depths; ferroelectric switching thus turns on/off the superlattice. Our study demonstrates the potential of creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.

cond-mat.mes-hall↗

arXiv2022

Realization of the Haldane Chern insulator in a moiré lattice

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe2/WSe2 moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall (QSH) insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley--one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

cond-mat.mes-hall↗

arXiv2022

Tunable bilayer Hubbard model physics in twisted WSe2

Moiré materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides (TMDs) with large band offset realize the single-band Hubbard models. Introduction of a new layer degree of freedom is expected to foster richer interactions, enabling Hund's physics, interlayer exciton condensation and new superconducting pairing mechanisms to name a few. Here, we report competing electronic orders in twisted AB-homobilayer WSe2, which realizes a bilayer Hubbard model in the weak interlayer hopping limit for holes. We characterize the charge order, layer polarization and magnetization of the moiré bilayer, subjected to an out-of-plane electric and magnetic field, by exciton sensing and magneto circular dichroism measurements. By layer-polarizing holes via the electric field, we observe a crossover from an excitonic insulator to a charge-transfer insulator at hole density of $ν$=1 (in unit of moiré density), a transition from a paramagnetic to an antiferromagnetic charge-transfer insulator at $ν$=2, and evidence for a layer-selective Mott insulator at 1<$ν$<2. The unique coupling of charge and spin to external fields also manifests a giant magneto-electric response. Our results establish a new solid-state simulator for problems in strong-correlation physics that are described by bilayer Hubbard models.

cond-mat.str-el↗

arXiv2022

Van der Waals pi Josephson junctions

Proximity-induced superconductivity in a ferromagnet can induce Cooper pairs with a finite center-of-mass momentum. The resultant spatially modulated superconducting order parameter is able to stabilize Josephson junctions (JJs) with pi phase difference in superconductor-ferromagnet heterostructures and realize 'quiet' phase qubits. The emergence of two-dimensional (2D) layered superconducting and magnetic materials promises a new platform for realizing pi JJs with atomically sharp interfaces by van der Waals stacking. Here we demonstrate a thickness-driven 0-pi transition in JJs made of NbSe2 (an Ising superconductor) with a Cr2Ge2Te6 (a ferromagnetic semiconductor) weak link. By systematically varying the Cr2Ge2Te6 thickness, we observe a vanishing supercurrent at a critical thickness around 8 nm, followed by a re-entrant supercurrent upon further increase in thickness. Near the critical thickness, we further observe unusual supercurrent interference patterns with vanishing critical current around zero in-plane magnetic field. They signify the formation of 0-pi JJs (with both 0 and pi regions) likely induced by the nanoscale magnetic domains in Cr2Ge2Te6. Our work highlights the potential of van der Waals superconductor-ferromagnet heterostructures for the explorations of unconventional superconductivity and superconducting electronics.

cond-mat.supr-con↗

arXiv2021

Continuous Mott transition in semiconductor moiré superlattices

The evolution of a Landau Fermi liquid into a nonmagnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics. The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids, exciton condensates and unconventional superconductivity. Semiconductor moiré materials realize a highly controllable Hubbard model simulator on a triangular lattice, providing a unique opportunity to drive a metal-insulator transition (MIT) via continuous tuning of the electronic interactions. Here, by electrically tuning the effective interaction strength in MoTe2/WSe2 moiré superlattices, we observe a continuous MIT at a fixed filling of one electron per unit cell. The existence of quantum criticality is supported by the scaling behavior of the resistance, a continuously vanishing charge-gap as the critical point is approached from the insulating side, and a diverging quasiparticle effective mass from the metallic side. We also observe a smooth evolution of the low-temperature magnetic susceptibility across the MIT and find no evidence of long-range magnetic order down to ~ 5% of the Curie-Weiss temperature. The results signal an abundance of low-energy spinful excitations on the insulating side that is further corroborated by the presence of the Pomeranchuk effect on the metallic side. Our results are consistent with the universal critical theory of a continuous MIT from a Landau Fermi liquid to a nonmagnetic Mott insulator in two dimensions.

cond-mat.str-el↗

arXiv2021

Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions

Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and topological superconductivity. The emergence of two-dimensional (2D)layered superconducting and magnetic materials that can form nanoscale junctions with atomically sharp interfaces presents an ideal laboratory to explore new phenomena from coexisting superconductivity and magnetic ordering. Here we report tunneling spectroscopy under an in-plane magnetic field of superconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that are made of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3. We observe nearly 100% tunneling anisotropic magnetoresistance (AMR), that is, difference in tunnel resistance upon changing magnetization direction from out-of-plane to inplane. The giant tunneling AMR is induced by superconductivity, particularly, a result of interfacial magnetic exchange coupling and spin-dependent quasiparticle scattering. We also observe an intriguing magnetic hysteresis effect in superconducting gap energy and quasiparticle scattering rate with a critical temperature that is 2 K below the superconducting transition temperature. Our study paves the path for exploring superconducting spintronic and unconventional superconductivity in van der Waals heterostructures.

cond-mat.supr-con↗

arXiv2019

Imaging and control of critical spin fluctuations in two-dimensional magnets

Strong spin fluctuations are expected near the thermodynamic critical point of a continuous magnetic phase transition. Such critical spin fluctuations are highly correlated and in principle can occur at any time- and length-scales; they govern critical phenomena and potentially can drive new phases. Although theoretical studies have been made for decades, direct observation of critical spin fluctuations remains elusive. The recent discovery of two-dimensional (2D) layered magnets, in which spin fluctuations significantly modify magnetic properties as compared to their bulk counterparts and integration into heterostructures and devices can be easily achieved, provides an ideal platform to investigate and harness critical spin phenomena. Here we develop a fast and sensitive magneto-optical imaging microscope to achieve wide-field, real-time monitoring of critical spin fluctuations in single-layer CrBr3, which is a 2D ferromagnetic insulator. We track the critical phenomena directly from the fluctuation correlations and observe both slowing-down dynamics and enhanced correlation length. Through real-time feedback control of critical spin fluctuations, we further achieve switching of magnetic states solely by electrostatic gating without applying a magnetic field or a Joule current. The ability to directly image and control critical spin fluctuations in 2D magnets opens up exciting opportunities to explore critical phenomena and develop applications in nanoscale engines and information science.

cond-mat.mes-hall↗

arXiv2018

An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe$_2$

Time reversal and spatial inversion are two key symmetries for conventional Bardeen-Cooper-Schrieffer (BCS) superconductivity. Breaking inversion symmetry can lead to mixed-parity Cooper pairing and unconventional superconducting properties. Two-dimensional (2D) NbSe$_2$ has emerged as a new non-centrosymmetric superconductor with the unique out-of-plane or Ising spin-orbit coupling (SOC). Here, we report the observation of an unusual continuous paramagnetic-limited superconductor-normal metal transition in 2D NbSe$_2$. Using tunneling spectroscopy under high in-plane magnetic fields, we observe a continuous closing of the superconducting gap at the upper critical field at low temperatures, in stark contrast to the abrupt first-order transition observed in BCS thin film superconductors. The paramagnetic-limited continuous transition arises from a large spin susceptibility of the superconducting phase due to the Ising SOC. The result is further supported by self-consistent mean-field calculations based on the ab initio band structure of 2D NbSe$_2$. Our findings establish 2D NbSe$_2$ as a promising platform for exploring novel spin-dependent superconducting phenomena and device concepts, such as equal-spin Andreev reflection and topological superconductivity.

cond-mat.supr-con↗

arXiv2018

Observation of the nonlinear anomalous Hall effect in 2D WTe2

The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE). Here we show a new Hall effect in a nonmagnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current. We observe the effect (referred to as nonlinear AHE) in two-dimensional Td-WTe2, a semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage changes sign when the bias current reverses direction; it maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE. Our results open the possibility of exploring the intrinsic Berry curvature effect in nonlinear electrical transport in solids .

cond-mat.mes-hall↗

arXiv2016

Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field

Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet inequivalent valleys, offering unique opportunities for valley control through helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest, (~ 0.2 meV/T). Here we show greatly enhanced valley spitting in monolayer WSe2, utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magneto-reflectance measurements. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing MEF of a magnetic insulator can induce magnetic order, and valley and spin polarization in TMDCs, which may enable valleytronic and quantum computing applications.

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