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Kaijie Yang

Publications and source records attributed to Kaijie Yang.

22 records · Page 2Linked to original sources

Towards a Topological Classification of Nonadiabaticity in Chemical Reactions

The application of topology, a branch of mathematics, to the study of electronic states in crystalline materials has had a revolutionary impact on the field of condensed matter physics. For example, the development of topological band theory has delivered new approaches and tools to characterize the electronic structure of materials, resulting in the discovery of new phases of matter with exotic properties. In the framework of topological band theory, the crossings between energy levels of electrons are characterized by topological invariants, which predict the presence of topological boundary states. Given the frequency of energy level crossings on the potential energy surface in molecules, the applicability of these concepts to molecular systems could be of great interest for our understanding of reaction dynamics. However, challenges arise due to differing quantum mechanical descriptions of solids and molecules. Out work aims to bridge the gap between topological band theory and molecular chemistry. We propose that the Euler Class, a topological invariant, can be used to categorize and analyse the distribution of nonadiabatic couplings on the potential energy surface. To exemplify this connection, we introduce a model system with two distinct regimes that are characterized by different values of the Euler Class, yet identical potential energy surfaces. Contrary to expectations set by the Born-Oppenheimer approximation, we propose that these two regimes don't exhibit identical dynamics, due to a qualitatively distinct distribution of nonadiabatic couplings.

cond-mat.mtrl-sci↗

$\mathbb Z_2$-Nontrivial Moiré Minibands and Interaction-Driven Quantum Anomalous Hall Insulators in Topological Insulator Based Moiré Heterostructures

We studied electronic band structure and topological property of a topological insulator thin film under a moiré superlattice potential to search for two-dimensional (2D) $\mathbb Z_2$ non-trivial isolated mini-bands. To model this system, we assume the Fermi energy inside the bulk band gap and thus consider an effective model Hamiltonian with only two surface states that are located at the top and bottom surfaces and strongly hybridized with each other. The moiré potential is generated by another layer of 2D insulating materials on top of topological insulator films. In this model, the lowest conduction (highest valence) mini-bands can be $\mathbb Z_2$ non-trivial when the minima (maxima) of the moiré potential approximately forms a hexagonal lattice with six-fold rotation symmetry. For the nontrivial conduction mini-band cases, the two lowest Kramers' pairs of conduction mini-bands both have nontrivial $\mathbb Z_2$ invariant in presence of inversion, while applying external gate voltages to break inversion leads to only the lowest Kramers' pair of mini-bands to be topologically non-trivial. The Coulomb interaction can drive the lowest conduction Kramers' mini-bands into the quantum anomalous Hall state when they are half-filled, which is further stabilized by breaking inversion symmetry. We propose the monolayer Sb$_{2}$ on top of Sb$_2$Te$_3$ thin films to realize our model based on results from the first principles calculations.

cond-mat.mes-hall↗

Electrical Switching of the Edge Current Chirality in Quantum Anomalous Hall Insulators

A quantum anomalous Hall (QAH) insulator is a topological state of matter, in which the interior is insulating but electrical current flows along the edges of the sample, in either clockwise (right-handed) or counter-clockwise (left-handed) direction dictated by the spontaneous magnetization orientation. Such chiral edge current (CEC) eliminates any backscattering, giving rise to quantized Hall resistance and zero longitudinal resistance. In this work, we fabricate mesoscopic QAH sandwich (i.e. magnetic topological insulator (TI)/TI/magnetic TI) Hall bar devices and succeed in switching the CEC chirality in QAH insulators through spin-orbit torque (SOT) by applying a current pulse and suitably controlled gate voltage. The well-quantized QAH states with opposite CEC chiralities are demonstrated through four- and three-terminal measurements before and after SOT switching. Our theoretical calculations show that the SOT that enables the magnetization switching can be generated by both bulk and surface carriers in QAH insulators, in good agreement with experimental observations. Current pulse-induced switching of the CEC chirality in QAH insulators will not only advance our knowledge in the interplay between magnetism and topological states but also expedite easy and instantaneous manipulation of the QAH state in proof-of-concept energy-efficient electronic and spintronic devices as well as quantum information applications.

cond-mat.mes-hall↗

Momentum-Space Spin Antivortex and Spin Transport in Monolayer Pb

Non-trivial momentum-space spin texture of electrons can be induced by spin-orbit coupling and underpins various spin transport phenomena, such as current-induced spin polarization and spin Hall effect. In this work, we find a non-trivial spin texture, spin anti-vortex, can appear at certain momenta on the $Γ-\text K$ line in 2D monolayer Pb on top of SiC. Different from spin vortex due to the band degeneracy in the Rashba model, the existence of this spin anti-vortex is guaranteed by Poincare-Hopf theorem and thus topologically stable. Accompanied with this spin anti-vortex, a Lifshtiz transition of Fermi surfaces occur at certain momenta on the $\text K- \text M$ line, and both phenomena are originated from the anti-crossing between the $j=1/2$ and $j=3/2$ bands. A rapid variation of the response coefficients for both the current-induced spin polarization and spin Hall conductivity is found when the Fermi energy is tuned around the spin anti-vortex. Our work demonstrates the monolayer Pb as a potentially appealing platform for spintronic applications.

cond-mat.mes-hall↗