arXiv subjects

Kajal Sharma

Publications and source records attributed to Kajal Sharma.

4 recordsLinked to original sources

arXiv2026

Probing the Valley-Selective Tunneling Density of States in Monolayer MoS2 based Resonant Tunneling Devices

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D sheet along the c-axis sandwiched in between Al2O3 tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through Density Functional Theory (DFT) and Non-Equilibrium Greens function (NEGF) visualized via Tunneling Density of States (TDOS). Understanding extended to S-vacancies not only change the bandgap, as evaluated through nanoscale Cathodoluminescence (CL) spectroscopy, but also alters the effective mass hence the mobility as investigated here within the high symmetry path in the k-space. Electrical performances of fabricated RTD, starting from cryogenic to room temperatures, show a significant milestone via exhibiting huge PVR values of 178 at 4K and 24 at RT with more possible improvement in the field of room temperature quantum technology. Momentum conserved and non conserved tunneling from highly n-doped Si through multiple valleys of 1L-MoS2 provides a tremendous opportunity in gate-induced manipulation in Spin-Valley Qubit technology operational at deep cryogenic temperatures (mK).

cond-mat.mes-hall↗

arXiv2025

Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir

Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe2 based resonant tunneling structure. In this work, a n-WSe2/HfO2/i-MoTe2/HfO2/Au resonant tunneling device (RTD) with a symmetric and asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe2 and Chemical Vapor Deposition (CVD) grown 2H-WSe2 along with theoretical modeling by adopting non-equilibrium Green function (NEGF) formalism. The impact of MoTe2-quantum well widths equal, and above its excitonic Bohr radius (EBR:0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be 4 at 4K in the low voltage range for the very first time in MoTe2 based RTD. Therefore, the present work may provide the route for fabrication of WSe2/MoTe2-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.

cond-mat.mes-hall↗

arXiv2025

Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration

Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions. Growth temperature 500oC and gas pressure 55 sccm are found to be the optimized parameters for formation of thermodynamically stable WSe$_{2-x}$ with dominant Raman peak at 265 cm-1. XRD and HR-TEM measurement clarify the formation of high crystallinity along the c-axis and quasi-crystallinity along a and b axes respectively. Lower intensities from Raman-measurement and PL-peak at 768 nm (with 532 nm excitation wavelength) infers the thin nature of the grown film, along with strong second harmonic emission with excitation wavelength varying from 350nm to 450 nm. This work also retracks the controlled etching by reactive ions to achieve large area bi/tri-layer films to fabricate advanced devices. We also have fabricated an advanced MOS structure on SiO$_2$/p-Si substrate which shows tremendous performance by means of photo-capacitance under illumination condition where photo-carriers can survive the higher probe frequencies (> 1MHz). Under illumination condition, HfO$_2$/WSe$_2$ embedded MOS shows its dominance showing a huge electron-inversion region over HfO$_2$/ SiO$_2$/p-Si and SiO$_2$/p-Si MOS devices even at high frequencies (1-10 MHz). Thereby, this work also reveals a possible route for capacitance based highly sensitive photodetection using conventional Si-technology with integration of such WSe$_2$/W as an active material.

cond-mat.mtrl-sci↗

arXiv2023

Terahertz Logic Gate Operations in a Toroidal Metasurface

The applications of terahertz metamaterials are being actively explored in recent times for applications in high-speed communication devices, miniature photonic circuits, and bio-chemical devices because of their wide advantages. The toroidal resonance, a new type of metasurface resonance, has been examined with great interest to utilize its properties in terahertz metasurface applications. The study reports a proof of concept design of a toroidal metasurface that experimentally demonstrates logic gate operations in the terahertz frequency regime by passive tuning of the split ring resonators compromising the meta-atom design. The amplitude modulation is utilized as a method of determining the Boolean logic output of the system. The proposed metasurface could be further optimized for high amplitude modulations, as well as for active logic gate operations using tunable materials including graphene and ITO. The proposed metasurface consists of three split-ring resonators, and the near-field coupling between the adjacent resonators dictates the logic gate operations. The toroidal excitation in the metasurface is determined by a multipole analysis of the scattered powers of terahertz radiation. The proposed metasurfaces experimentally define AND Boolean logic gate at 0.89 terahertz, and OR Boolean logic gate at 0.97 terahertz. Numerical simulations support the experimentally obtained results. Additionally, we numerically report the excitation of NAND gate at 0.87 THz. Such toroidal logic-gate metasurfaces in the terahertz region could find applications in digitized terahertz circuits for photonic device applications.

physics.optics↗