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Kang Li

Publications and source records attributed to Kang Li.

At least 199 records · Page 11Linked to original sources

Band engineering of Dirac surface states in topological insulators-based van der Waals heterostructures

The existence of gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the non-trivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in-situ angle-resolved photoemission spectroscopy (ARPES) and the first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological non-trivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds lights in designing artificial topological materials for electronic and spintronic purposes.

cond-mat.mes-hall↗

Optimal designs for the proportional interference model

The interference model has been widely used and studied in block experiments where the treatment for a particular plot has effects on its neighbor plots. In this paper, we study optimal circular designs for the proportional interference model, in which the neighbor effects of a treatment are proportional to its direct effect. Kiefer's equivalence theorems for estimating both the direct and total treatment effects are developed with respect to the criteria of A, D, E and T. Parallel studies are carried out for the undirectional model, where the neighbor effects do not depend on whether they are from the left or right. Moreover, the connection between optimal designs for the directional and undiretional models is built. Importantly, one can easily develop a computer program for finding optimal designs based on these theorems.

math.ST↗

Approximation properties of simple Lie groups made discrete

In this paper we consider the class of connected simple Lie groups equipped with the discrete topology. We show that within this class of groups the following approximation properties are equivalent: (1) the Haagerup property; (2) weak amenability; (3) the weak Haagerup property. In order to obtain the above result we prove that the discrete group GL(2,K) is weakly amenable with constant 1 for any field K.

math.GR↗

A Schur multiplier characterization of coarse embeddability

We give a contractive Schur multiplier characterization of locally compact groups coarsely embeddable into Hilbert spaces. Consequently, all locally compact groups whose weak Haagerup constant is 1 embed coarsely into Hilbert spaces, and hence the Baum-Connes assembly map with coefficients is split-injective for such groups.

math.GR↗

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices.

cond-mat.mtrl-sci↗

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

cond-mat.mtrl-sci↗

A Novel Non-Parametric Approach to Compare Paired General Statistical Distributions between Two Interventions

Despite of many measures applied for determine the difference between two groups of observations, such as mean value, median value, sample stan- dard deviation and so on, we propose a novel non parametric transformation method based on Mallows distance to investigate the location and variance differences between the two groups. The convexity theory of this method is constructed and thus it is a viable alternative for data of any distribu- tions. In addition, we are able to establish the similar method under other distance measures, such as Kolmogorov-Smirnov distance. The application of our method in real data is performed as well.

stat.AP↗

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which however show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron doping level. Scanning tunneling microscopy and first principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in Bi2Se3 matrix, which contribute to the observed chemical potential dependent gap-opening in the Dirac surface states without long-range ferromagnetic order.

cond-mat.mtrl-sci↗

Electrically tuned magnetic order and magnetoresistance in a topological insulator

The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic topological magnetoelectric effects. A particularly intriguing phenomenon in this case is the magnetic field dependence of electrical resistance, or magnetoresistance (MR). The intricate interplay between topological protection and broken-TRS may lead to highly unconventional MR behaviour that can find unique applications in magnetic sensing and data storage. However, so far the MR of TI with spontaneously broken TRS is still poorly understood, mainly due to the lack of well-controlled experiments. In this work, we investigate the magneto transport properties of a ferromagnetic TI thin film fabricated into a field effect transistor device. We observe an unusually complex evolution of MR when the Fermi level (EF) is tuned across the Dirac point (DP) by gate voltage. In particular, MR tends to be positive when EF lies close to the DP but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture for localization, but is intimately correlated with the gate-tuned magnetic order. We show that the underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative MR. The simultaneous electrical control of magnetic order and magneto transport facilitates future TI-based spintronic devices.

cond-mat.mtrl-sci↗

Permanence properties of property A and coarse embeddability for locally compact groups

If $H$ is a lattice in a locally compact second countable group $G$, then we show that $G$ has property A (respectively is coarsely embeddable into Hilbert space) if and only if $H$ has property A (respectively is coarsely embeddable into Hilbert space). Moreover, we show three interesting generalizations of this result. If $H$ is a closed subgroup of $G$ that is co-amenable in $G$, and if $H$ has property A (respectively, is coarsely embeddable into Hilbert space), then we show that $G$ has property A (respectively, is coarsely embeddable into Hilbert space). We also show that an extension of property A groups still has property A. On the coarse embeddability side, we show that if $\{e\}\rightarrow H\rightarrow G\rightarrow Q\rightarrow\{e\}$ is a short exact sequence, and if either $H$ is coarsely embeddable into Hilbert space and $Q$ has property A, or $H$ is compact and $Q$ is coarsely embeddable into Hilbert space, then $G$ is coarsely embeddable into Hilbert space. We extend the theory of measure equivalence to locally compact non-unimodular groups. In a natural way, we can also define measure equivalence subgroups. We show that property A and uniform embeddability into Hilbert space pass to measure equivalence subgroups. Using the same techniques, we show that also the Haagerup property, weak amenability and the weak Haagerup property pass to measure equivalence subgroups.

math.OA↗

Property A and uniform embedding for locally compact groups

For locally compact groups, we define an analogue to Yu's property A that he defined for discrete metric spaces. We show that our property A for locally compact groups agrees with Roe's notion of property A for proper metric spaces, defined in \cite{R05}. We prove that many of the results that are known to hold in the discrete setting, hold also in the locally compact setting. In particular, we show that property A is equivalent to amenability at infinity (see \cite{HR00} for the discrete case), and that a locally compact group with property A embeds uniformly into a Hilbert space (see \cite{Yu00} for the discrete case). We also prove that the Baum-Connes assembly map with coefficients is split-injective, for every locally compact group that embeds uniformly into a Hilbert space. This extends results by Skandalis, Tu and Yu \cite{STY02}, and by Chabert, Echterhoff and Oyono-Oyono \cite{CEO04}.

math.OA↗

Influences of Topological Defect on Spin Hall Effect

We study the influence of topological defect on the spin current as well as the spin Hall effect. We find that the nontrivial deformation of the space-time due to topological defect can generate a spin dependent current which then induces an imbalanced accumulation of spin states on the edges of sample. The corresponding spin-Hall conductivity has also been calculated for the topological defect of a cosmic string. Comparing to the ordinary value, a correction which is linear with mass density of the cosmic string appears. Our approach to the dynamics of non-relativistic spinor in the presence of a topological defect is based on the Foldy-Wouthuysen transformation. The spin current is obtained in by using the extended Drude model which is independent of the scattering mechanism.

cond-mat.mes-hall↗

Special Relativity for the Full Speed Range -- speed slower than $C_R$ also equal to and faster than $C_R$

In this paper, we establish a theory of Special Relativity valid for the entire speed range without the assumption of constant speed of light. Two particles species are defined, one species of particles have rest frames with rest mass, and another species of particles do not have rest frame and can not define rest mass. We prove that for the particles which have rest frames, the Galilean transformation is the only linear transformation of space-time that allows infinite speed of particle motion. Hence without any assumption, an upper bound of speed is required for all non-Galilean linear transformations. We then present a novel derivation of the mass-velocity and the mass-energy relations in the framework of relativistic dynamics, which is solely based on the principle of relativity and basic definitions of relativistic momentum and energy. The generalized Lorentz transformation is then determined. The new relativistic formulas are not related directly to the speed of light $c$, but are replaced by a Relativity Constant $C_R$ which is an universal speed constant of the Nature introduced in relativistic dynamics. Particles having rest mass are called tardyons moving slower than $C_R$. Particles having neither rest frames nor rest mass are called $tachyons$ moving faster than $C_R$, and with the real mass-velocity relation $m=|\vec{p}_\infty |(v^2-C_R^2)^{-1/2}$ where $\vec{p}_\infty $ is the finite momentum of tachyon at infinite speed. Moreover, the particles with constant-speed $C_R$, also having neither rest frames nor rest mass, are called $constons$. For all particles, $p^2=\vec{p}^2-({E^2}/{C_R^2})$ remains invariant under transformation between inertia frames. The invariant reads $p^2=-m_0^2C_R^2 <0$ for tardyons, $p^2 =0$ for constons and $p^2=|\vec{p}_\infty|^2 >0$ for tachyons, respectively.

physics.gen-ph↗

Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped TI requires ferromagnetism not relying on the charge carriers. We have realized the ferromagnetism independent of both polarity and density of carriers in Cr-doped BixSb2-xTe3 thin films grown by molecular beam epitaxy. Meanwhile, the anomalous Hall effect is found significantly enhanced with decreasing carrier density, with the anomalous Hall angle reaching unusually large value 0.2 and the zero field Hall resistance reaching one quarter of the quantum resistance (h/e2), indicating the approaching of the QAH regime. The work paves the way to ultimately realize QAH effect and other unique magnetoelectric phenomena in TIs.

cond-mat.mtrl-sci↗

$π^+π^+$ and $π^+π^-$ colliding in noncommutative space

By studying the scattering process of scalar particle pion on the noncommutative scalar quantum electrodynamics, the non-commutative amendment of differential scattering cross-section is found, which is dependent of polar-angle and the results are significantly different from that in the commutative scalar quantum electrodynamics, particularly when $\cosθ\sim \pm 1$. The non-commutativity of space is expected to be explored at around $Λ_{NC}\sim$TeV.

hep-ph↗

Common physical mechanism for integer and fractional quantum Hall effects

Integer and fractional quantum Hall effects were studied with different physics models and explained by different physical mechanisms. In this paper, the common physical mechanism for integer and fractional quantum Hall effects is studied, where a new unified formulation of integer and fractional quantum Hall effect is presented. Firstly, we introduce a 2-dimensional ideal electron gas model in the presence of strong magnetic field with symmetry gauge, and the transverse electric filed $\varepsilon_2$ is also introduced to balance Lorentz force. Secondly, the Pauli equation is solved where the wave function and energy levels is given explicitly. Thirdly, after the calculation of the degeneracy density for 2-dimensional ideal electron gas system, the Hall resistance of the system is obtained, where the quantum Hall number $ν$ is introduced. It is found that the new defined $ν$, called filling factor in the literature, is related to radial quantum number n and angular quantum number $|m|$, the different $n$ and $|m|$ correspond to different $ν$. This provides unification explaination for integer and fractional quantum Hall effects. It is predicated that more new cases exist of fractional quantum Hall effects without the concept of fractional charge.

physics.gen-ph↗

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.

cond-mat.mtrl-sci↗

Two-dimensional Noncommutative atom Gas with Anandan interaction

Landau like quantization of the Anandan system in a special electromagnetic field is studied. Unlike the cases of the AC system and the HMW system, the torques of the system on the magnetic dipole and the electric dipole don't vanish. By constructing Heisenberg algebra, the Landau analog levels and eigenstates on commutative space, NC space and NC phase space are obtained respectively. By using the coherent state method, some statistical properties of such free atom gas are studied and the expressions of some thermodynamic quantities related to revolution direction are obtained. Two particular cases of temperature are discussed and the more simple expressions of the free energy on the three spaces are obtained. We give the relation between the value of $σ$ and revolution direction clearly, and find Landau like levels of the Anandan system are invariant and the levels between the AC system and the HMW system are interchanged each other under Maxwell dual transformations on the three spaces. The two sets of eigenstates labelled by $σ$ can be related by a supersymmetry transformation on commutative space, but the phenomenon don't occur on NC situation. We emphasize that some results relevant to Anandan interaction are suitable for the cases of AC interaction and HMW interaction under special conditions.

physics.gen-ph↗