arXiv subjects

Karel Výborný

Publications and source records attributed to Karel Výborný.

At least 19 recordsLinked to original sources

arXiv2026

Room-temperature antiferromagnetic resonance in NaMnAs

We report on antiferromagnetic resonance experiments in bulk tetragonal NaMnAs -- a room-temperature antiferromagnetic semiconductor. Our results corroborate previous ab initio studies, which propose that NaMnAs is an easy-axis antiferromagnet with the Néel vector oriented along the tetragonal axis. At $ B = 0 $, we find a single antiferromagnetic resonance line at 7 meV and associate it with a doubly degenerate ($ k = 0 $) magnon mode. Its energy softens considerably with increasing $ T $, but remains clearly visible in the data up to room temperature. From the experimental data, we estimate the single-ion anisotropy of the Mn ions in NaMnAs in the range 0.1-0.2 meV, a value that is relatively large compared to other manganese-based antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Non-Relativistic Anisotropic Magnetoresistance with Collinear and Non-Collinear Magnetic Order

Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that a comparable symmetry lowering can also occur in a non-relativistic limit. Using tight-binding models, density functional theory calculations, and Boltzmann transport theory, we investigate systems with multiple magnetic sublattices, including both collinear and non-collinear antiferromagnets, as well as ferrimagnetic configurations. We show that AMR and related anisotropies can emerge purely from magnetic order, without the need for SOC, and may reach significant magnitudes. The findings are supported by case studies on toy-model lattices and real materials such as MnN, Mn$_3$Sn, and are further interpreted using a symmetry analysis based on Neumann's principle. Material candidates that exhibit non-relativistic anisotropic magnetoresistance are identified by symmetry analysis applied to entries in the MAGNDATA database.

cond-mat.mtrl-sci↗

arXiv2025

Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions

The component of the resistivity tensor $ρ_{ij}$ corresponding to voltage transverse to both an applied current and a magnetic field can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is often ascribed to experimental artefacts and ignored. Here, we show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner--Wohlfarth modelling. We then apply our approach to magnetotransport measurements of $\rm Mn_5Si_3$ thin films, which undergo a transition from non-collinear to an altermagnetic collinear state. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$~K. Transverse resistivity measurements thus offer a simple and readily available probe of magnetic order transitions.

cond-mat.mes-hall↗

arXiv2024

Anomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor

Following the recent observation of anomalous Hall effect in antiferromagnetic hexagonal MnTe thin films, related phenomena at finite frequencies have come into focus. Magnetic circular dichroism (MCD) is the key material property here. In the x-ray range, the XMCD has already been demonstrated and used to visualise domains via photoemission electron microscopy (PEEM). Here we report on MCD in optical range and discuss its microscopic mechanism.

cond-mat.mtrl-sci↗

arXiv2024

Quench switching of Mn2As

We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching.

cond-mat.mtrl-sci↗

arXiv2024

Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.

cond-mat.mtrl-sci↗

arXiv2023

Non-relativistic torque and Edelstein effect in noncollinear magnets

The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and consequently also a current-induced torque can exist even in the absence of the spin-orbit coupling. Using group symmetry analysis, model calculations, and realistic simulations on selected compounds, we identify large classes of non-collinear magnet candidates and demonstrate that the current-driven torque is of similar magnitude as the celebrated spin-orbit torque in conventional transition metal structures. We also show that this torque can exist in an insulating material, which could allow for highly efficient electrical control of magnetic order.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous Hall conductivity and quantum friction

Anomalous Hall effect in very clean samples (high conductivity regime) is studied using a two-dimensional network model. We find that the off-diagonal conductivity comprises two parts: one which reflects the bulk properties as obtained by the Kubo formula and another which is sensitive to boundary conditions imposed on the network. The latter scales with the system width in the ideal case and for real-world samples, it will depend on the coherence length. It provides an alternative interpretation of the observed behaviour in the clean limit which is otherwise attributed to the skew scattering. We highlight analogies to friction in viscous fluids responsible for Couette flow.

cond-mat.mes-hall↗

arXiv2021

Landau level spectroscopy of PbSnSe topological crystalline insulator

We report on an infrared magneto-spectroscopy study of Pb$_{1-x}$Sn$_x$Se, a topological crystalline insulator. We have examined a set of samples, all in the inverted regime of electronic bands, with the tin composition varying from $x=0.2$ to $0.33$. Our analysis shows that the observed response, composed of a series of interband inter-Landau level excitations, can be interpreted and modelled using the relativistic-like Hamiltonian for three-dimensional massive Dirac electrons, expanded to include diagonal quadratic terms that impose band inversion. In our data, we have not found any clear signature of massless electron states that are present on the surface of Pb$_{1-x}$Sn$_x$Se crystals in the inverted regime. Reasons for this unexpected result are discussed.

cond-mat.mes-hall↗

arXiv2021

Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions

Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from DC to 28 THz. The large bandwidth covers the regimes of both diffusive and ballistic intraband electron transport and, thus, allows us to separate extrinsic and intrinsic AMR components. Analysis of the THz response based on Boltzmann transport theory reveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is of predominantly extrinsic nature. However, the Co thin film exhibits a sizeable intrinsic AMR contribution, which is constant up to 28 THz and amounts to more than 2/3 of the DC AMR contrast of 1%. These features are attributed to the hexagonal structure of the Co crystallites. They are interesting for applications in terahertz spintronics and terahertz photonics. Our results show that broadband terahertz electromagnetic pulses provide new and contact-free insights into magneto-transport phenomena of standard magnetic thin films on ultrafast time scales.

cond-mat.mes-hall↗

arXiv2020

Significance of nuclear quantum effects in hydrogen bonded molecular chains

In hydrogen bonded systems, nuclear quantum effects such as zero-point motion and tunneling can significantly affect their material properties through underlying physical and chemical processes. Presently, direct observation of the influence of nuclear quantum effects on the strength of hydrogen bonds with resulting structural and electronic implications remains elusive, leaving opportunities for deeper understanding to harness their fascinating properties. We studied hydrogen-bonded one-dimensional quinonediimine molecular networks which may adopt two isomeric electronic configurations via proton transfer. Herein, we demonstrate that concerted proton transfer promotes a delocalization of π-electrons along the molecular chain, which enhances the cohesive energy between molecular units, increasing the mechanical stability of the chain and giving rise to new electronic in-gap states localized at the ends. These findings demonstrate the identification of a new class of isomeric hydrogen bonded molecular systems where nuclear quantum effects play a dominant role in establishing their chemical and physical properties. We anticipate that this work will open new research directions towards the control of mechanical and electronic properties of low-dimensional molecular materials via concerted proton tunneling.

cond-mat.mes-hall↗

arXiv2020

Atomically sharp domain walls in an antiferromagnet

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Efficient Electrical Spin-Splitter Based on Non-Relativistic Collinear Antiferromagnetism

Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-torque concept utilizing antiferromagnetic RuO$_2$ films interfaced with a ferromagnet.

cond-mat.mtrl-sci↗

arXiv2020

Antiferromagnetic CuMnAs: Ab initio description of finite temperature magnetism and resistivity

Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding AFM systems at finite temperatures; however first-principles description of these effects is complicated. With ab initio techniques, we investigate three models of spin fluctuations (magnons) influencing the transport in AFM CuMnAs; the models are numerically feasible and easily implementable to other studies. We numerically justified a fully relativistic collinear disordered local moment approach and we present its uncompensated generalization. A saturation or a decrease of resistivity caused by magnons, phonons, and their combination (above approx. 400 K) was observed and explained by changes in electronic structure. Within the coherent potential approximation, our finite-temperature approaches may be applied also to systems with impurities, which are found to have a large impact not only on residual resistivity, but also on canting of magnetic moments from the AFM to the ferromagnetic (FM) state.

cond-mat.mtrl-sci↗

arXiv2018

Electronic structure and magnetic anisotropies of antiferromagnetic transition-metal difluorides

We compare GGA+U calculations with available experimental data and analyze the origin of magnetic anisotropies in MnF$_2$, FeF$_2$, CoF$_2$, and NiF$_2$. We confirm that the magnetic anisotropy of MnF$_2$ stems almost completely from the dipolar interaction, while magnetocrystalline anisotropy energy plays a dominant role in the other three compounds, and discuss how it depends on the details of band structure. The latter is critically compared to available optical measurements. The case of CoF$_2$, where magnetocrystalline anisotropy energy strongly depends on $U$, is put into contrast with FeF$_2$ where theoretical predictions of magnetic anisotropies are nearly quantitative.

cond-mat.mtrl-sci↗

arXiv2013

Nodal "ground states" and orbital textures in semiconductor quantum dots

Conventional understanding implies that the ground state of a nonmagnetic quantum mechanical system should be nodeless. While this notion also provides a valuable guidance in understanding the ordering of energy levels in semiconductor nanostructures, there are reports that $\textit{nodal}$ ground states for holes are possible. However, the existence of such nodal states has been debated and even viewed merely as an artifact of a $\boldsymbol{k{\cdot}p}$ model. Using complementary approaches of both $\boldsymbol{k{\cdot}p}$ and tight-binding models, further supported by an effective Hamiltonian for a continuum model, we reveal that the nodal ground states in quantum dots are not limited to a specific approach. Remarkably, the emergence of the nodal hole states at the top of the valence band can be attributed to the formation of the orbital vortex textures through competition between the hole kinetic energy and the coupling to the conduction band states. We suggest an experimental test for our predictions of the reversed energy ordering and the existence of nodal ground states. We discuss how our findings and the studies of orbital textures could be also relevant for other materials systems.

cond-mat.mes-hall↗

arXiv2009

Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As

Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization.

cond-mat.mtrl-sci↗

arXiv2008

Hybrid skew scattering regime of the anomalous Hall effect in Rashba systems: unifying Keldysh, Boltzmann, and Kubo formalisms

We present the analytical description of the anomalous Hall effect (AHE) in a 2DEG ferromagnet within the Keldysh formalism. These results unify all three linear response approaches to anomalous Hall transport and close a long standing debate. We are able to identify a new extrinsic AHE regime dominated by a hybrid skew scattering mechanism. This new contribution is inversely proportional to the impurity concentration, resembling the normal skew scattering, {\em but} independent of the impurity-strength, resembling the side-jump mechanism. Within the Kubo formalism this regime is captured by higher order diagrams which, although weak, dominate when both subbands are occupied; this regime can be detected by variable remote doping experiments that we describe.

cond-mat.mes-hall↗