arXiv subjects

Karim Bouzehouane

Publications and source records attributed to Karim Bouzehouane.

28 records · Page 2Linked to original sources

arXiv2017

Electrical signature of individual magnetic skyrmions in multilayered systems

Magnetic skyrmions are topologically protected whirling spin textures that can be stabilized in magnetic materials in which a chiral interaction is present. Their limited size together with their robustness against the external perturbations promote them as the ultimate magnetic storage bit in a novel generation of memory and logic devices. Despite many examples of the signature of magnetic skyrmions in the electrical signal, only low temperature measurements, mainly in magnetic materials with B20 crystal structure, have demonstrated the skyrmions contribution to the electrical transport properties. Using the combination of Magnetic Force Microscopy (MFM) and Hall resistivity measurements, we demonstrate the electrical detection of sub-100 nm skyrmions in multilayered thin film at room temperature (RT). We furthermore analyse the room temperature Hall signal of a single skyrmion which contribution is mainly dominated by anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2017

Room-temperature current-induced generation and motion of sub-100nm skyrmions

Magnetic skyrmions are nanoscale windings of the spin configuration that hold great promise for technology due to their topology-related properties and extremely reduced sizes. After the recent observation at room temperature of sub-100 nm skyrmions stabilized by interfacial chiral interaction in magnetic multilayers, several pending questions remain to be solved, notably about the means to nucleate individual compact skyrmions or the exact nature of their motion. In this study, a method leading to the formation of magnetic skyrmions in a micrometer-sized nanotrack using homogeneous current injection is evidenced. Spin-transfer-induced motion of these small electricalcurrent-generated skyrmions is then demonstrated and the role of the out-of-plane magnetic field in the stabilization of the moving skyrmions is also analysed. The results of these experimental observations of spin torque induced motion are compared to micromagnetic simulations reproducing a granular type, non-uniform magnetic multilayer, in order to address the particularly important role of the magnetic inhomogeneities on the current-induced motion of sub-100 nm skyrmions, for which the material grains size is comparable to the skyrmion diameter.

cond-mat.mes-hall↗

arXiv2015

Skyrmions at room temperature : From magnetic thin films to magnetic multilayers

Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m2 in the case of the Ir/Co/Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavir in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinsskii-Moriya interaction. This discoevry of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.

cond-mat.mtrl-sci↗

arXiv2012

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

cond-mat.mtrl-sci↗

arXiv2011

Nanoscale ferroelectric manipulation of magnetic flux quanta

Using heterostructures that combine a large-polarization ferroelectric (BiFeO3) and a high-temperature superconductor (YBa2Cu3O7-δ), we demonstrate the modulation of the superconducting condensate at the nanoscale via ferroelectric field effects. Through this mechanism, a nanoscale pattern of normal regions that mimics the ferroelectric domain structure can be created in the superconductor. This yields an energy landscape for magnetic flux quanta and, in turn, couples the local ferroelectric polarization to the local magnetic induction. We show that this form of magnetoelectric coupling, together with the possibility to reversibly design the ferroelectric domain structure, allows the electrostatic manipulation of magnetic flux quanta.

cond-mat.supr-con↗

arXiv2010

Imaging ferroelectric domains in multiferroics using a low-energy electron microscope in the mirror operation mode

We report on low-energy electron microscopy imaging of ferroelectric domains with submicron resolution. Periodic strips of 'up' and 'down'-polarized ferroelectric domains in bismuth ferrite -a room temperature multiferroic- serve as a model system to compare low-energy electron microscopy with the established piezoresponse force microscopy. The results confirm the possibility of full-field imaging of ferroelectric domains with short acquisition times by exploiting the sensitivity of ultraslow electrons to small variations of the electric potential near surfaces in the "mirror" operation mode.

physics.ins-det↗

arXiv2010

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.

cond-mat.mtrl-sci↗

arXiv2007

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.

cond-mat.mtrl-sci↗

arXiv2006

Multiferroic tunnel junctions

Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect.

cond-mat.mtrl-sci↗

arXiv2005

Spinel ferrites: old materials bring new opportunities for spintronics

Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto perovskite substrates allows the stabilization of novel ferrite phases with properties dramatically differing from bulk ones. Indeed, NiFe2O4 films few nanometres thick have a saturation magnetization at least twice that of the bulk compound and their resistivity can be tuned by orders of magnitude, depending on the growth conditions. By integrating such thin NiFe2O4 layers into spin-dependent tunnelling heterostructures, we demonstrate that this versatile material can be useful for spintronics, either as a conductive electrode in magnetic tunnel junctions or as a spin-filtering insulating barrier in the little explored type of tunnel junction called spin-filter. Our findings are thus opening the way for the realisation of monolithic spintronics architectures integrating several layers of a single material, where the layers are functionalised in a controlled manner.

cond-mat.mtrl-sci↗