arXiv subjects

Karin M. Rabe

Publications and source records attributed to Karin M. Rabe.

At least 19 recordsLinked to original sources

arXiv2026

Systematic display of the spin splitting in band structures of representative altermagnetic crystals

In this work we demonstrate a novel approach to exhibit the unique spin splitting that is typical of collinear altermagnets. This approach is to plot band structures on Brillouin zone paths that sample general k-points to show a representative picture that corresponds to Brillouin zone averages. This is in contrast to conventional band structure plotting which plots band structures on the highest-symmetry points and lines, and thus in many cases can fail to show any altermagnetic spin splitting at all. Our investigation compares the new approach with the band structures of collinear altermagnets using conventional band structure plotting. We report the band structure and symmetry analysis for MnTe, CrSb, SmFeO3, ScCrO3, LaMnO3, TlCrO3, HoFeO3, InCrO3 and DyFeO3. This result clearly demonstrates the advantage of this novel method for displaying the spin splitting of collinear altermagnets.

cond-mat.mtrl-sci↗

arXiv2026

AlterSeeK-Path: Systematic construction of generalized band-structure paths for displaying altermagnetic spin splitting

Altermagnetic materials exhibit spin splitting in their electronic band structures while maintaining zero net magnetization. However, conventional high-symmetry k-paths generally hide this splitting because they follow symmetry lines that in most cases enforce spin degeneracy. We present AlterSeeK-Path, an open-source Python tool that systematically constructs generalized band-structure paths for collinear altermagnets. The method selects the centroid of the conventional irreducible wedge used in routine band-structure calculations as the representative general k-point, maps it to a spin-flip-related partner, and inserts paired segments through these points into the standard high-symmetry path; these segments systematically sample the interior of the irreducible wedge. We demonstrate the construction for all 54 three-dimensional combinations of extended Bravais lattice type and spin Laue group across the six crystal systems that support collinear altermagnetism, and for the 12 two-dimensional cases spanning the four compatible two-dimensional Bravais lattices. Representative band structures are shown for the distinct lattice/path cases. With AlterSeeK-Path, these band structures can be constructed with essentially the same effort as conventional band structures.

cond-mat.mtrl-sci↗

arXiv2026

Atomic-scale theory of robust out-of-plane ferroelectricity in ultrathin films

Ferroelectricity in ultrathin films, characterized by robust switchable out-of-plane polarization, is key to next-generation nanoelectronics. Although the macroscopic theory of ferroelectricity suggests that ferroelectricity is inevitably suppressed as the film thickness decreases, recent studies have demonstrated robust ultra thin-film ferroelectricity, for certain ferroelectric materials, specifically HfO$_2$-based oxides and bismuth-based oxides. In this work, we develop an atomic-scale theoretical framework for understanding ferroelectricity in this limiting regime. By considering the work function of the termination layers of the film, we find that robust ferroelectricity arises from ``self-polarizing'' and ``switchable role of the termination layer'' effects strongly correlated to the ``characteristic structure.'' This theory also provides further insights on the importance of top electrodes in stabilizing ferroelectricity for this class of materials in the ultrathin limit. This work aims to develop a comprehensive theoretical framework for thin-film ferroelectricity, providing fundamental insights that can guide the design of next-generation nanoscale devices.

cond-mat.mtrl-sci↗

arXiv2026

Strain patterning of flexomagnetism

Flexomagnetism, the coupling of magnetic ordering to strain gradients, provides access to novel symmetry-broken magnetic phases that cannot be accessed via uniform strain. However, flexomagnetism is hard to understand because it is extremely difficult to control a spatially varying strain. Here, we develop a top-down strategy to pattern transverse strain gradients using helium ion implantation through a lithographically defined mask. Using epitaxial films of the antiferromagnetic nodal line semimetal GdAuGe, we demonstrate that transverse strain gradients $\partial \varepsilon_{zz}/\partial x$ induce near-room-temperature ferromagnetic response, compared to the retained para or antiferromagnetism for homogeneously strained GdAuGe. We spatially correlate the magnetic response with the regions of largest strain gradient, via magnetic force microscopy and nanobeam x-ray diffraction, respectively, to confirm the flexomagnetic response. Our approach opens new avenues for the precise control of magnetic phases in thin films of quantum materials via a patterned strain gradient.

cond-mat.mtrl-sci↗

arXiv2025

Electron Doping Stabilization of Highly-Polar Supertetragonal BaSnO3

Could electrons stabilize ferroelectric polarization in unpolarized system? Basically, electron doping was thought to be contrary to polarization due to the well-known picture that the screening effect on Coulomb interaction diminishes ferroelectric polarization. However, in this paper, we propose a novel mechanism of stabilizing highly-polar supertetragonal BaSnO3 by electron doping. With moderate compressive strain applied, less than -5.5%, BaSnO3 exhibits stable nonpolarized normal tetragonal structure and an unstable supertetragonal state which is characterized with extremely large c/a ratio and giant polarization. We found that the band gap of the supertetragonal state is much smaller than the normal tetragonal state, with a difference around 1.2eV. Therefore, the energy of the doped electrons selectively favors the smaller gap supertetragonal state than the larger band gap normal tetragonal state, and the critical strain to stabilize the supertetragonal phase could be reduced by electron doping. This mechanism guarantees the controllable supertetragonal structures by electron doping and ensures the coexistence of giant polarization and conducting in high-mobility BaSnO3, and is promising to design high-mobility ferroelectrics conductor.

cond-mat.mtrl-sci↗

arXiv2025

Competing phases of HfO$_2$ from unstable flat phonon bands of an unconventional high-symmetry structure

We carry out first-principles calculations to demonstrate that the complex energy landscape and competing phases of HfO$_2$ can be understood from the four unstable flat phonon bands of an unconventional high-symmetry structure of HfO$_2$ with the space group $Cmma$. We consider structures generated from the $Cmma$ reference structure by all possible combinations of the zone center and zone boundary modes belonging to the unstable flat phonon branches. We find 12 distinct locally-stable structures, of which 5 correspond to well-known phases. We also show that 8 of these 12 structures can be described as period-2 superlattices of the ferroelectric $Pca2_1$ (oIII), ferroelectric $Pnm2_1$ (oIV), monoclinic $P2_1/c$ (m) and distorted monoclinic $P2_1/c$ (dm) structures. We demonstrate how the unstable flat phonon bands can explain the atomically thin grain boundaries in the various types of superlattices. Finally, we point out that arbitrary-period HfO$_2$ superlattices derived from the 6 different types of period-2 superlattices are expected to form based on the flatness of the unstable phonon branches. The organizing principle provided by this work deepens our understanding of the underlying physics in the phase stability of HfO$_2$ and provides guidance for functional phase stabilization.

cond-mat.mtrl-sci↗

arXiv2025

G-type Antiferromagnetic BiFeO$_3$ is a Multiferroic $g$-wave Altermagnet

G-type antiferromagnetic BiFeO$_3$ is shown to be an altermagnet. We present the band structure using an unconventional scheme designed to highlight the distinctive spin splitting which is characteristic of altermagnets. We define and show plots of the spin-splitting function in reciprocal space. We show that the nodal surfaces of the spin-splitting function that follow from symmetry can be classified into two types, which we call symmetry-enforced and continuity-enforced. We describe the spin-splitting function with a simple parametrization in a basis of symmetry-adapted plane waves. Using group-theory analysis based on irreducible representations of the crystallographic Laue group, we confirm that the altermagnetism of G-type BiFeO$_3$ is $g$-wave and present a complete classification table for the general three-dimensional case. Finally, we discuss the effect of ferroelectric switching on the altermagnetic order, and identify three classes of ferroelectric altermagnets.

cond-mat.mtrl-sci↗

arXiv2025

Stacking-dependent electronic structure of ultrathin perovskite bilayers

Twistronics has received much attention as a new method to manipulate the properties of 2D van der Waals structures by introducing moiré patterns through a relative rotation between two layers. Here we begin a theoretical exploration of twistronics beyond the realm of van der Waals materials by developing a first-principles description of the electronic structure and interlayer interactions of ultrathin perovskite bilayers. We construct both an ab initio tight-binding model as well as a minimal 3-band effective model for the valence bands of monolayers and bilayers of oxides derived from the Ruddlesden-Popper phase of perovskites, which is amenable to thin-layer formation. We illustrate the approach with the specific example of Sr$_2$TiO$_4$ layers but also provide model parameters for Ca$_2$TiO$_4$ and Ba$_2$TiO$_4$ .

cond-mat.mtrl-sci↗

arXiv2025

Supertetragonal BaSnO3 induced giant ferroelectricity in SrTiO3/BaSnO3 superlattices

Perovskite BaSnO3 has an Sn s-orbital conduction band minimum, which makes it of interest as a transparent-conducting oxide parent compound but also contraindicates the ferroelectric instability characteristic of the related compound BaTiO3. In this work, we studied the effect of (001) compressive strain on BaSnO3 using first-principles methods. We found that, with low compressive strain, symmetry breaking takes cubic BaSnO3 to a nonpolar tetragonal state, with a first-order phase transition to a hidden highly-polarized ferroelectric supertetragonal state at about -5%. Based on the facts that the mismatch of lattice constant in experiment between BaSnO3 and SrTiO3 is about -5.2% and coherent growth of BaSnO3 on SrTiO3 has been experimentally realized for BaSnO3 layers thinner than 3 unit-cells, we studied a series of SrTiO3/BaSnO3 superlattices with one or two unit-cells of BaSnO3 and several unit-cells of SrTiO3. We found that the superlattices are ferroelectric with large polarizations. We propose that the origin of ferroelectricity in the superlattices is the mechanical and electrical coupling of the BaSnO3 and SrTiO3 layers, with polarized supertetragonal state of BaSnO3 induced by compressive-strain from the SrTiO3 layers and polarization of the SrTiO3 layers by the polar BaSnO3 layers. Due to the distinctive electronic states in the BaSnO3 layers, the realization of ferroelectricity holds promise for the design of novel electronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Tunable polar distortions and magnetism in Gd$_x$La$_{1-x}$PtSb epitaxial films

Hexagonal $ABC$ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of $BC$ atomic planes. We report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd$_x$La$_{1-x}$PtSb films grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The Gd$_x$La$_{1-x}$PtSb films form a solid solution from x = 0 to 1 and retain the polar hexagonal structure ($P6_3 mc$) out to $x \leq 0.95$. With increasing $x$, the PtSb buckling increases and the out of plane lattice constant $c$ decreases due to the lanthanide contraction. While hexagonal LaPtSb is a highly conductive polar metal, the carrier density decreases with $x$ until an abrupt phase transition to a zero band overlap semimetal is found for cubic GdPtSb at $x=1$. The magnetic susceptibility peaks at small but finite $x$, which we attribute to Ruderman Kittel Kasuya Yosida (RKKY) coupling between localized $4f$ moments, whose concentration increases with $x$, and free carriers that decrease with $x$. Samples with $x\geq 0.3$ show antiferromagnetic Curie-Weiss behavior and a Neel temperature that increases with $x$. The Gd$_x$La$_{1-x}$PtSb system provides opportunities to dramatically alter the polar buckling and concentration of local $4f$ moments, for tuning chiral spin textures and topological phases.

cond-mat.mtrl-sci↗

arXiv2023

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion doping.

cond-mat.str-el↗

arXiv2023

Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP$_2$S$_6$

The van der Waals layered ferroelectric CuInP$_2$S$_6$ has been found to exhibit a variety of intriguing properties arising from the fact that the Cu ions are unusually mobile in this system. While the polarization switching mechanism is usually understood to arise from Cu ion motion within the monolayers, a second switching path involving Cu motion across the van der Waals gaps has been suggested. In this work, we perform zero-temperature first-principles calculations on such switching paths, focusing on two types that preserve the periodicity of the primitive unit cell: ``cooperative" paths preserving the system's glide mirror symmetry, and ``sequential" paths in which the two Cu ions in the unit cell move independently of each other. We find that CuInP$_2$S$_6$ features a rich and varied energy landscape, and that sequential paths are clearly favored energetically both for cross-gap and through-layer paths. Importantly, these segments can be assembled to comprise a globally insulating cycle with the out-of-plane polarization evolving by a quantum as the Cu ions shift to neighboring layers. In this sense, we argue that CuInP$_2$S$_6$ embodies the physics of a quantized adiabatic charge pump.

cond-mat.mtrl-sci↗

arXiv2023

Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films

We examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry (RBS) and x-ray diffraction measurements suggest that phase pure GdPt$_{x}$Sb films can accommodate up to $15\%$ Pt vacancies ($x=0.85$), which act as acceptors as measured by Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display a metallic temperature dependent resistivity (d$ρ$/dT$>$0). The longitudinal magnetoresistance (LMR, magnetic field $\mathbf{B}$ parallel to electric field $\mathbf{E}$) is more negative than transverse magnetoresistance (TMR, $\mathbf{B} \perp \mathbf{E}$), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes; however, suggests conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductor-like resistivity (d$ρ$/dT$<$0) and more negative transverse magnetoresistance than longitudinal magnetoresistance. Hysteresis and other nonlinearities in the low field Hall effect and magnetoresistance suggest that spin disorder scattering, and possible topological Hall effect, may dominate the near stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes, but point to possible topological spin textures in GdPtSb.

cond-mat.mtrl-sci↗

arXiv2022

Electronic correlation in nearly free electron metals with beyond-DFT methods

For more than three decades, nearly free electron elemental metals have been a topic of debate because the computed bandwidths are significantly wider in the local density approximation to density-functional theory (DFT) than indicated by angle-resolved photoemission (ARPES) experiments. Here, we systematically investigate this using first-principles calculations for alkali and alkaline-earth metals using DFT and various beyond-DFT methods such as meta-GGA, G$_0$W$_0$, hybrid functionals (YS-PBE0, B3LYP), and LDA+eDMFT. We find that the static non-local exchange, as partly included in the hybrid functionals, significantly increase the bandwidths even compared to LDA, while the G$_0$W$_0$ bands are only slightly narrower than in LDA. The agreement with the ARPES is best when the local approximation to the self-energy is used in the LDA+eDMFT method. We infer that even moderately correlated systems with partially occupied s-orbitals, which were assumed to approximate the uniform electron gas, are very well described in terms of short-range dynamical correlations that are only local to an atom.

cond-mat.str-el↗

arXiv2022

"Double-path" ferroelectrics and the sign of the piezoelectric response

In this work, we propose a class of ferroelectrics (which we denote "double-path" ferroelectrics), characterized by two competing polarization switching paths for which the change in polarization is different and in fact of opposite sign. Depending on which path is favorable under given conditions, this leads to different identification of up- and down-polarized states. Since the sign of piezoelectric response depends on the assignment of up- or down-polarized state for a specific structure, this means that the material can exhibit different signs of the piezoelectric response under different conditions. We focus on HfO$_2$ as a key example. Our first-principles calculations show that there are two competing paths in HfO$_2$, resulting from different displacements of the atoms from the initial to the final structures, and the change in polarization along these two paths is of opposite sign. These results provide a natural explanation for the recently observed discrepancy in the signs of piezoelectric responses in HfO$_2$ between theoretical first-principles calculations and experimental observation. Further, this allows predictions of how to favor one path over another by changes in conditions and compositional tuning. This family of materials also includes other candidates, such as CuInP$_2$S$_6$ and theoretically proposed LaVO$_3$-SrVO$_3$ superlattice. We finally note that double-path ferroelectrics possess novel electromechanical properties since the signs of their piezoelectric responses can be switched.

cond-mat.mtrl-sci↗

arXiv2022

Electron-lattice coupling contributions to polarization switching in charge-order-induced ferroelectrics

We carry out first-principles density-functional-theory calculations to elucidate the polarization switching mechanism in charge-ordering-induced ferroelectrics based on the prototypical case of the (SrVO$_3$)$_1$(LaVO$_3$)$_1$ superlattice. We find that lattice relaxation for a specific charge ordering state can "lock" that state in, making non-adiabatic switching to a different CO variant energetically prohibitive, and in some cases, even making the energy barrier for adiabatic switching prohibitively large. We classify charge-ordering materials into two types, polyhedral breathing and off-centering displacement, based on the type of lattice mode most strongly coupled to the charge ordering. We demonstrate that the non-adiabatic electron hopping induced by an external electric field is expected only in off-centering-displacement-type charge-ordering-induced ferroelectrics. This successfully explains the different observed switching behaviors of LuFe$_2$O$_4$ and Fe$_3$O$_4$. These results offer a new understanding of the polarization switching mechanism in charge-ordering-induced ferroelectrics that provides guidance for the design and discovery of charge-ordering-induced ferroelectric materials and suggests a strategy for realizing "electronic ferroelectricity" with polarization switching on electronic rather than lattice time scales.

cond-mat.mtrl-sci↗

arXiv2022

Vibrational properties of CuInP2S6 across the ferroelectric transition

In order to explore the properties of a two-sublattice ferroelectric, we measured the infrared and Raman scattering response of CuInP2S6 across the ferroelectric and glassy transitions and compared our findings to a symmetry analysis, calculations of phase stability, and lattice dynamics. In addition to uncovering displacive character and a large hysteresis region surrounding the ferroelectric transition temperature T_C, we identify the vibrational modes that stabilize the polar phase and confirm the presence of two ferroelectric variants with opposite polarizations. Below TC, a poorly understood relaxational or glassy transition at Tg is characterized by local structure changes in the form of subtle peak shifting and activation of low frequency out-of-plane Cu- and In-containing modes. The latter are due to changes in the Cu/In coordination environments and associated order-disorder processes. Moreover, Tg takes place in two steps with another large hysteresis region and significant underlying scattering. Combined with imaging of the room temperature phase separation, this effort lays the groundwork for studying CuInP2S6 under external stimuli and in the ultra-thin limit.

cond-mat.mtrl-sci↗

arXiv2022

Vibrational fingerprints of ferroelectric hafnia

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO2 crystals stabilized with yttrium (chemical formula HfO2:xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO2 and paves the way for an analysis of mode contributions to high-k dielectric and ferroelectric properties for chip technologies.

cond-mat.mtrl-sci↗