arXiv subjects

Karin Yamamura

Publications and source records attributed to Karin Yamamura.

8 recordsLinked to original sources

arXiv2026

Harnessing Non-Boltzmann Steady States in Lanthanide Nanocrystals for Mid-Infrared Optoelectronics

Converting mid-infrared (MIR) radiation to visible or near-infrared wavelengths is essential for imaging and sensing, yet achieving sensitive, low-power, and scalable detection remains challenging. Lanthanide nanocrystals provide an alternative through ratiometric luminescence but are typically constrained by Boltzmann statistics, which tie population distributions to lattice temperature and limit signal contrast. Here we show that MIR irradiation rebalances dissipative relaxation pathways, driving lanthanide emitters into a non-Boltzmann steady state that enables non-thermal control of population distributions. This allows emission behaviors inaccessible under thermal equilibrium. We exploit this regime to achieve linear MIR detection with respect to MIR power across 6.8 to 8.6 micrometers. The ratiometric response is intrinsically independent of the pump power, enabling operation at an ultralow excitation power of 10 uW, several orders of magnitude lower than conventional approaches. Using standard silicon photodetectors, we then demonstrate room-temperature MIR imaging with detection limits approaching 4 nW um-2. Our results establish lanthanide nanoparticles as an efficient platform for MIR conversion and sensing in nanophotonic systems.

physics.optics↗

arXiv2026

Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride

Single photon emitters (SPEs) are promising building blocks for practical devices in quantum technologies. Traditionally, these systems are excited using off-resonant visible light through their phonon transitions, yet this process remains poorly understood. Here, we explore the interaction of mid-infrared (MIR) excitation on the properties of SPEs in hexagonal boron nitride. Notably, we present a reversible, non-destructive method to enhance emission from blue SPEs using MIR co-excitation. By resonantly driving defect-localized in-plane infrared-active optical phonon modes near 7.3 um, the MIR field modulates carrier dynamics through a phonon-assisted recombination. This unique feature, not observed previously for defects in solids, is a promising reservoir in a growing toolkit to modulate quantum emitters at room temperature for their use in practical quantum technologies.

physics.optics↗

arXiv2026

Coupling nitrogen vacancy centers in silicon carbide to nanophotonic resonators

Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy defect that has a spin-triplet ground state. However, strong phonon coupling in the infrared range limits photon extraction from these defects. Here, we use nanophotonic structures, specifically micro-pillar and micro-disk resonators, to enhance optical collection and spin-readout. The micro-pillar geometry yields a 4-fold increase in photon collection, accompanied by a 2.4-fold reduction in spectral noise in optically detected magnetic resonance measurements. Consequently, the magnetic field sensitivity is improved by 24%. The large mode volume of the micro-disk supports resonances spanning 1150-1250 nm, enabling broadband coupling to nitrogen vacancy emission lines. Our results demonstrate that fabrication of scalable photonic structures efficiently improves performance of silicon carbide color centers for integrated quantum light generation and sensing.

physics.optics↗

arXiv2025

Electrical Generation of Colour Centres in Hexagonal Boron Nitride

Defects in wide band gap crystals have emerged as a promising platform for hosting colour centres that enable quantum photonic applications. Among these, hexagonal boron nitride (hBN), a van der Waals material, stands out for its ability to be integrated into heterostructures, enabling unconventional charge injection mechanisms that bypass the need for p-n junctions. This advancement allows for the electrical excitation of hBN colour centres deep inside the large hBN bandgap, which has seen rapid progress in recent developments. Here, we fabricate hBN electroluminescence (EL) devices that generate narrowband colour centres suitable for electrical excitation. The colour centres are localised to tunnelling current hotspots within the hBN flake, which are designed during device fabrication. We outline the optimal conditions for device operation and colour centre stability, focusing on minimising background emission and ensuring prolonged operation. Our findings follow up on the existing literature and mark a step forward towards the integration of hBN based colour centres into quantum photonic technologies.

physics.optics↗

arXiv2024

Quantum Efficiency the B-centre in hexagonal boron nitride

B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centres. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, and the local dielectric environment was altered by transferring a 250 nm hBN flake on top of the one containing the emitters. By analysing the resulting change in measured lifetimes, we determined the QE of B-centres in the thin flake of hBN, as well as after the transfer. Our results indicate that B-centres located in thin flakes can exhibit QEs higher than 40%. Near-unity QEs are achievable under reasonable Purcell enhancement for emitters embedded in thick flakes of hBN, highlighting their promise for quantum photonics applications.

physics.optics↗

arXiv2024

Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (>> 10 nm). Here, we use in-situ time-resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B-centre generation. We show that the generation of B-centres is accompanied by quenching of a carbon-related emission at ~305 nm and that both processes are rate-limited by electromigration of defects in the hBN lattice. We identify problems that limit the efficacy and reproducibility of the emitter generation method, and solve them using a combination of optimized electron beam parameters and hBN pre- and post-processing treatments. We achieve B-centre quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights towards identification of the atomic structure of the B-centre quantum emitter.

physics.app-ph↗

arXiv2023

Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors

Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly sought after. However, most wide band gap materials are not amenable to efficient doping, which in turn poses challenges on efficient electrical excitation and on-chip integration. Here, we demonstrate for the first time room temperature electroluminescence from isolated colour centres in hexagonal boron nitride (hBN). We harness the van der Waals (vdW) structure of two-dimensional materials, and engineer nanoscale devices comprised of graphene - hBN - graphene tunnel junctions. Under an applied bias, charge carriers are injected into hBN, and result in a localised light emission from the hBN colour centres. Remarkably, our devices operate at room temperature and produce robust, narrowband emission spanning a wide spectral range - from the visible to the near infrared. Our work marks an important milestone in van der Waals materials and their promising attributes for integrated quantum technologies and on-chip photonic circuits.

cond-mat.mes-hall↗

arXiv2023

Photophysics of blue quantum emitters in hexagonal Boron Nitride

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.

physics.optics↗