arXiv subjects

Karthik V. Raman

Publications and source records attributed to Karthik V. Raman.

8 recordsLinked to original sources

arXiv2026

Thickness-Driven Control of Room Temperature Ferrimagnetic Skyrmions and their Topological Hall signature in GdFe Single Layers

Magnetic skyrmions are nanoscale, topologically protected spin textures with exceptional potential for high density data storage and energy efficient computing. Among various skyrmion hosting systems, rare earth transition metal ferrimagnets offer a promising platform due to their tunable magnetic properties and intrinsically low net magnetization. Despite this, the fundamental control of ferrimagnetic skyrmions in single layer films remains unexplored. Here, we demonstrate a viable route for engineering room temperature skyrmions in GdFe single layers through precise control of film thickness (60 to 80 nm). Thickness variation enables the systematic tuning of key magnetic parameters, including perpendicular magnetic anisotropy and saturation magnetization, thereby allowing precise control over skyrmion size and density. Magnetic force microscopy (MFM) reveals a clear thickness dependent evolution of isolated skyrmion characteristics, where skyrmion size decreases while skyrmion density increases with increasing GdFe film thickness, in agreement with micromagnetic simulations. At the same time, magnetotransport measurements show a systematic enhancement in the topological Hall resistivity with thickness, further corroborating the increased skyrmion density observed in MFM. Scanning transmission electron microscopy reveals a compositional gradient across the film thickness, indicative of structural asymmetry and potential inversion symmetry breaking, contributing to the emergence of a bulk Dzyaloshinskii Moriya interaction. Notably, sub 60nm skyrmions with high areal density are stabilized at room temperature. This work provides a viable route to tailor the properties of ferrimagnetic skyrmions in single-layer GdFe films, paving the way for the development of high-density ferrimagnetic skyrmionic devices.

cond-mat.mes-hall↗

arXiv2025

Selective Amplification of the Topological Hall Signal in Cr$_2$Te$_3$: The Role of Molecular Exchange Coupling

Layered magnetic transition-metal chalcogenides (TMCs) are a focal point of research, revealing a variety of intriguing magnetic and topological ground states. Within this family of TMCs, chromium telluride has garnered significant attention because of its excellent tunability in magnetic response, owing to the presence of competing magnetic exchange interactions. We here demonstrate the manipulation of magnetic anisotropy in ultra-thin Cr$_2$Te$_3$ films through growth engineering leading to a controlled transition from in-plane to out-of-plane orientation with an intermediate non-coplanar magnetic ground phase characterized by a topological Hall effect. Moreover, interfacing these films with Vanadyl phthalocyanine (VOPc) molecules prominently enhances the non-coplanar magnetic phase, attributing its presence to the competing interfacial magnetic exchange interactions over the spin-orbit-driven interfacial effects. These findings pave the way for the realization of novel topological spintronic devices through interface-modulated exchange coupling.

cond-mat.mtrl-sci↗

arXiv2024

Anisotropic planar Hall effects in Bi$_2$Se$_3$/EuS interfaces: Deciphering the role of proximity induced spin canting and topological spin texture

Proximity coupling of ferromagnetic insulator EuS to the topological insulator Bi$_2$Se$_3$ has been proposed to break time-reversal symmetry near the surface of Bi$_2$Se$_3$, introducing an energy gap or a tilt in the surface Dirac cone. As an inverse proximity effect, strong spin-orbit coupling available in the topological surface states can enhance the Curie temperature of ferromagnetism in EuS largely beyond its bulk value, and also generate a magnetic anisotropy. This can result in a canting of the magnetic moment of Eu ions in a plane perpendicular to the interface. Here, we investigate theoretically electronic transport properties arising from the Bi$_2$Se$_3$/EuS interfaces in the planar Hall geometry. Our analysis, based on a realistic model Hamiltonian and a semi-classical formalism for the Boltzmann transport equation, reveals distinct intriguing features of anisotropic planar Hall conductivity, depending on different scenarios for the canting of the Eu moments: fixed Eu moment canting, and freely-orientable Eu moment in response to the external in-plane magnetic field. The anisotropy in the planar Hall conductivity arises from the asymmetric Berry curvature of the gapped topological surface states. We also explore topological Hall effect of the Dirac surface states, coupled to a skyrmion crystal which can emerge in the EuS due to the interplay of ferromagnetic Heisenberg exchange, interfacial Dzyaloshinskii-Moriya interaction, and perpendicular alignment of the Eu moment. Our study provides new impetus for probing complex interplay between magnetic exchange interactions and topological surface states via anisotropic planar Hall effects.

cond-mat.mes-hall↗

arXiv2022

Longitudinal magnetoconductance and the planar Hall conductance in inhomogeneous Weyl semimetals

Elastic deformations (strain) couple to the electronic degrees of freedom in Weyl semimetals as an axial magnetic field (chiral gauge field), which in turn affects their impurity dominated diffusive transport. Here we study the longitudinal magnetoconductance (LMC) in the presence of strain, Weyl cone tilt, and finite intervalley scattering, taking into account the momentum dependence of the scattering processes (both internode and intranode), as well as charge conservation. We show that strain induced chiral gauge field results in `strong sign-reversal' of the LMC, which is characterized by the reversal of orientation of the magnetoconductance parabola with respect to the magnetic field. On the other hand, external magnetic field results in `strong sign-reversal', only for sufficiently strong intervalley scattering. When both external and chiral gauge fields are present, we observe both strong and weak sign-reversal, where in the case of weak sign-reversal, the rise and fall of magnetoconductivity depends on the direction of the magnetic field and/or the chiral gauge field, and is not correlated with the orientation of the LMC parabola. The combination of the two fields is shown to generate striking features in the LMC phase diagram as a function of various parameters such as tilt, strain, and intervalley scattering. We also study the effect of strain induced chiral gauge field on the planar Hall conductance and highlight its distinct features that can be probed experimentally.

cond-mat.mes-hall↗

arXiv2022

Revisiting magnetotransport in Weyl semimetals

A series of recent papers have claimed that intranode scattering, alone, can contribute to positive longitudinal magnetoconductance (LMC) due to chiral anomaly (CA) in Weyl semimetals (WSMs). We revisit the problem of CA induced LMC in WSMs, and show that intranode scattering, by itself, does not result in enhancement of LMC. In the limit of zero internode scattering, chiral charge must remain conserved, which is shown to actually decrease LMC. Only in the presence of a non-zero internode scattering (however weak), one obtains a positive LMC due to non-conservation of chiral charge. Even weak internode scattering suffices in generating positive LMC, since it redistributes charges across both the nodes, although on a time scale larger than that of the intranode scattering. Furthermore, our calculations reveal that, in contrast to recent works, in inhomogeneous WSMs strain induced axial magnetic field $B_5$, by itself, leads to negative longitudinal magnetoconductance and a negative planar Hall conductance.

cond-mat.mes-hall↗

arXiv2021

In-depth Analysis of Anisotropic Magnetoconductance in Bi$_2$Se$_3$ thin films with electron-electron interaction corrections

A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the overall MC; a study that has so far received limited attention. In this article, we accurately extract the above WL contribution by systematically analyzing the temperature and magnetic field dependency of conductivity in Bi$_2$Se$_3$ films. For accurate analysis, we quantify the contribution of electron-electron interactions to the measured MC which is often ignored in recent WAL studies. Moreover, we show that the WAL effect arising from the TSSs with finite penetration depth, for out-of-plane and in-plane magnetic field can together explain the anisotropic magnetoconductance (AMC) and, thus, the investigated AMC study can serve as a useful technique to probe the parameters like phase coherence length and penetration depth that characterise the TSSs in 3D TIs. We also demonstrate that increase in bulk-disorder, achieved by growing the films on amorphous SiO$_2$ substrate rather than on crystalline Al$_2$O$_3$(0001), can lead to stronger decoupling between the top and bottom surface states of the film.

cond-mat.str-el↗

arXiv2020

Evidence of Spin-Glass state in Molecular Exchange-Bias System

In conventional exchange-bias system comprising of a bilayer film of ferromagnet (FM) and antiferromagnet (AFM), investigating the role of spin-disorder and spin-frustration inside the AFM and at the interface has been crucial in understanding the fundamental mechanism controlling the exchange-bias -- an effect that leads to a horizontal shift in the magnetization hysteresis response of the FM. Similarly, in the recently reported monolayer molecular exchange-bias effect requiring no AFM layer, probing magnetic-disorder at the FM/molecule interface or inside the FM layer can provide new insights into the origin of molecular exchange-bias and the associated physics. In this article, by cooling the Fe/metal-phthalocyanine devices in oscillating magnetic field, we demonstrate a characteristic temperature dependent response of exchange-bias shift and ferromagnet coercivity that is supportive of a spin-glass behavior. Here, the origin of spin-glass is attributed to the spin frustration created in the magnetic structure of the Fe layer, which was absent in our reference-Fe studies. These results highlight the strong influence of FM/molecule interface pi-d hybridization on the magnetic exchange interactions extending deeper into the FM layer.

cond-mat.mtrl-sci↗

arXiv2020

Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films

The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial magnetotransport responses. Much of these studies are performed in the hexagonal systems, mainly Mn$_3$Sn and Mn$_3$Ge, with the kagome planes having their normal along the [001] direction. In this manuscript, we report our study in the cubic Mn$_3$Pt thin films with their kagome planes normal to the [111] crystal axis. Our studies reveal a hole conduction dominant Hall response with a non-monotonic temperature dependence of anomalous Hall conductivity (AHC), increasing from 9 $Ω^{-1}$cm$^{-1}$ at room temperature to 29 $Ω^{-1}$cm$^{-1}$ at 100 K, followed by a drop and unexpected sign-reversal at lower temperatures. Similar sign reversal is also observed in magnetoresistance measurements. We attribute this sign reversal to the transition from a Berry curvature dominated AHC at high temperature to a weak canted ferromagnetic AHC response at lower temperature, below 70 K, caused by the reorientation of Mn moments out of the kagome plane. Our above results in thin films of Mn$_3$Pt make advances in their integration with room temperature antiferromagnetic spintronics.

cond-mat.mtrl-sci↗