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Karuppuchamy Navamani

Publications and source records attributed to Karuppuchamy Navamani.

2 recordsLinked to original sources

Quantization Mapping on Dirac Dynamics via Voltage-Driven Charge Density in Monolayer Graphene: A Klein Paradox and Entropy-Ruled Wavevector Mechanics Study

Thermodynamics coupled quantum features on electron and hole dynamics in Dirac materials is quite interesting and crucial for real device applications such as electronic, thermoelectric, energy devices, and quantum circuits. The correlation between the formation of electron-hole puddles near the charge neutrality point (CNP) and the role of disorder in terms of differential entropy is fundamentally important for the Dirac transport mechanism in graphene systems, but not yet well-established. With this motivation, we map the energy quantization for Dirac materials through the empirical relation of voltage-driven charge density in monolayer graphene, using the differential entropy (h)-ruled wavevector (k) mechanics. For this work, we propose the four postulates which are the key observable descriptions of earlier research reports, to study the precise electronic transport via an entropy-guided wavevector propagation approach, along with the Klein paradox, which pertains to the ultrafast dynamics in the Dirac or quasi-Dirac systems. The introduced h-ruled k and h-ruled N relations generalize the electron dynamics in both the unbounded and potentially bounded Dirac systems. Through the quantization mapping procedure under different voltage-driven potential (U=eV) boundary conditions, the observed energy shift from lower to excited quantum state obeys the relation of N(k)=N(U)^3; here, N(U) is the voltage-driven potential energy contribution factor for the quantum state existence. In such a way, the mapped electron density, diffusion coefficient, and mobility for bounded Dirac materials are increased by orders of N^3, N^2, and N, respectively. This study reveals information about the interaction potential-DOS relationship in the Dirac materials.

cond-mat.mes-hall↗

Density of States Proportion on Charge Transfer Kinetics in Breathing Fermionic Systems of Molecules and Materials: A Perspective of Entropy-Ruled Method

Conceptualization, theory, method developments and implementations are always of great importance and an interesting task to explore a new dimension in science and technology, which is highly solicited for various functional-driven potential applications (e.g., electronic devices, charge storage devices). Numerous experimental and theoretical studies urge the necessity of a new theory or method to quantify the exact value of charge transport (CT) calculations (e.g., mobility and conductivity) through the appropriate process and methods. With this motivation, the entropy-ruled charge dynamics method has been recently proposed, which unifies band and hopping transport mechanism via quantum-classical transition analogy. Here, the energy (in terms of chemical potential) scaled entropy has a direct proportion with the density of states (DOS); and hence it is termed as DOS proportion. This proportion principally acts as a key descriptor for charge transport calculations in both molecular and materials systems, which is directly connected with all CT quantities like mobility, conductivity, current density etc. This perspective explains a unique nature of entropy-ruled method for the entire transport range from delocalized band to localization (or hopping) transport. The validity and limitations of Einstein relation and Boltzmann approach are discussed with different limits and physical conditions for disordered molecules and periodic systems. Finally, the futuristic scope and expected progress is addressed for correlated electron dynamical systems and devices. It is well-noted that the new DOS proportion and related entropy-ruled transport formalism are fundamentally more important for nurturing semiconducting science and technology towards a new era.

cond-mat.mes-hall↗