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Katherine Matthews

Publications and source records attributed to Katherine Matthews.

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Low-Temperature Suppression of Intertwined Orders in La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ Thin Films

The strong coupling between spin, charge, and lattice degrees of freedom in perovskite oxides leads to an array of exotic phenomena, giving these materials rich phase diagrams that can include coupled orders. This is exemplified by the A-site doped ferrite La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ (LSFO), which exhibits a coupled paramagnetic-antiferromagnetic and charge ordering phase transition at $\sim$190 K that has been well studied in thin films, bulk, and polycrystalline samples. However, the low temperature behavior of LSFO thin films below $\sim$100 K has not been thoroughly explored. This work uses several X-ray scattering and spectroscopy techniques to directly probe LSFO's magnetic and charge order down to low temperature. Using resonant X-ray scattering, we observe a complete suppression of LSFO's known antiferromagnetic and charge order below $\sim$25 K. Further spectroscopy and coherent scattering measurements provide insight into LSFO's electronic structure and domain dynamics in this new low temperature phase, and we propose possible explanations for the observed order suppression based on reduced dimensionality of domains in our thin films. Our findings provide insight into the effects of competing interactions in strongly correlated materials, particularly those with coupled orders.

cond-mat.str-el

Jamming-controlled stochasticity in metal-insulator switching

Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transistors. At present, there is strong interest in materials with strongly coupled structural and electronic phase transitions, which hold promise for energy-efficient technologies. Utilizing a structural phase transition and controlling its plasticity naturally leads to built-in memory, a key feature for emulating neurons and synapses in neuromorphic technologies. Here, $\textit{operando}$ Bragg X-ray photon correlation spectroscopy is used to study the evolution of the nano-domain distribution at the micron-scale in neuromorphic devices made from the archetypal Mott insulator vanadium dioxide. It is found that after electrical switching, slow nano-domain reconfiguration occurs on timescales of thousands of seconds and that the domains undergo a jamming transition, offering control over switching stochasticity at the micron scale. More precisely, repetitive above-threshold currents plastically drive the system into a jammed/glassy state where switching becomes deterministic, while sub-threshold currents erase the short-term memory contained in the nano-domain distribution, recovering stochastic switching, thus offering a path for in-device learning. The results illustrate the importance of studying the nanoscale physics associated with phase transitions in strongly correlated materials, even for macroscopic devices, and offer guidance for future device operation schemes.

cond-mat.mes-hall

Temperature dependent spin dynamics in La$_{0.67}$Sr$_{0.33}$MnO$_3$/Pt bilayers

Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin-charge conversion efficiency, LSMO can be used to create robust nano-oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device level spin-pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO3(110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300K to 90K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature dependent influence of interfacial interactions. The generated spin current in the micro-device is maximum at 170K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe) and a large spin Hall angle ($\approx$ 3.2%) at 170K. By fine-tuning the LSMO/Pt interface quality and integrating it into the device structure, the system exhibits a fourfold enhancement in signal output for LSMO/Pt devices compared to the Pt/Py system. Such robust device level performance can pave way for energy-efficient spintronic based devices.

cond-mat.mtrl-sci