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Katherine S. Shanks

Publications and source records attributed to Katherine S. Shanks.

10 recordsLinked to original sources

FOXDEN: FAIR Services for AI-Ready Scientific Datasets

Scientific datasets are most compatible with AI workflows when they are described by rich, machine-readable metadata and provenance information, following the FAIR guiding principles. The FAIR Open-Science Extensible Data Exchange Network (FOXDEN) is a set of cyberinfrastructure building blocks developed at the Cornell High Energy Synchrotron Source (CHESS) for annotating raw, reduced, and analyzed datasets with both structured and unstructured metadata and provenance records. It also allows researchers to publish these records with Digital Object Identifiers (DOIs) to create AI-ready datasets. We describe FOXDEN's architecture and its deployment at CHESS and at the National High Magnetic Field Laboratory, where it serves as a foundation for future agentic scientific workflows.

cs.DL↗

Large Data Acquisition and Analytics at Synchrotron Radiation Facilities

Synchrotron facilities like the Cornell High Energy Synchrotron Source (CHESS) generate massive data volumes from complex beamline experiments, but face challenges such as limited access time, the need for on-site experiment monitoring, and managing terabytes of data per user group. We present the design, deployment, and evaluation of a framework that addresses CHESS's data acquisition and management issues. Deployed on a secure CHESS server, our system provides real time, web-based tools for remote experiment monitoring and data quality assessment, improving operational efficiency. Implemented across three beamlines (ID3A, ID3B, ID4B), the framework managed 50-100 TB of data and over 10 million files in late 2024. Testing with 43 research groups and 86 dashboards showed reduced overhead, improved accessibility, and streamlined data workflows. Our paper highlights the development, deployment, and evaluation of our framework and its transformative impact on synchrotron data acquisition.

cs.HC↗

The influence of substantial intragranular orientation gradients on the micromechanical response of heavily-worked material

In this study, we employ high-energy X-ray characterization to examine the role of relatively large amounts of intragranular lattice misorientation -- present after many thermomechanical processes -- on the micromechanical response of Al-7085 with a modified T7452 temper. We utilize near-field high energy X-ray diffraction microscopy (HEDM) to measure three-dimensional (3D) spatial orientation fields, facilitated by a novel method that utilizes grain orientation envelopes measured using far-field HEDM to enable reconstruction of grains with intragranular orientation spreads greater than 20°. We then assess the consequences of consideration of intragranular orientation fields on the predicted deformation response of the sample through 3D micromechanical simulations of the forged Al-7085. We construct two virtual polycrystalline specimens for use in simulations: the first a faithful representation of the HEDM reconstruction, the second a microstructure with no intragranular misorientation (i.e., grain-averaged orientations). We find significant differences in the predicted deformation mechanism activation, distribution of stress, and distribution of plastic strain between simulations containing intragranular misorientation and those with grain-averaged orientations, indicating the necessity for consideration of intragranular orientation fields for accurate predictions. Further, the influence of elastic anisotropy is discussed, along with the effects of intragranular misorientation on fatigue life through the calculation and analysis of fatigue indicator parameters.

cond-mat.mtrl-sci↗

Very-High Dynamic Range, 10,000 frames/second Pixel Array Detector for Electron Microscopy

Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the mapping of electric, magnetic and strain fields depend on the dose. Reasonable acquisition time requires high beam current and the ability to quantitatively detect both large and minute changes in signal. A new hybrid pixel array detector (PAD), the second-generation Electron Microscope Pixel Array Detector (EMPAD-G2), addresses this challenge by advancing the technology of a previous generation PAD, the EMPAD. The EMPAD-G2 images continuously at a frame-rates up to 10 kHz with a dynamic range that spans from low-noise detection of single electrons to electron beam currents exceeding 180 pA per pixel, even at electron energies of 300 keV. The EMPAD-G2 enables rapid collection of high-quality STEM data that simultaneously contain full diffraction information from unsaturated bright field disks to usable Kikuchi bands and higher-order Laue zones. Test results from 80 to 300 keV are presented, as are first experimental results demonstrating ptychographic reconstructions, strain and polarization maps. We introduce a new information metric, the Maximum Usable Imaging Speed (MUIS), to identify when a detector becomes electron-starved, saturated or its pixel count is mismatched with the beam current.

physics.ins-det↗

High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 micron thick cadmium telluride (CdTe) sensor. The full imager is a 2 x 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 x 10^{6} 80 keV x-rays. A charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

physics.ins-det↗

Characterization of Chromium Compensated GaAs as an x-ray Sensor Material for Charge-Integrating Pixel Array Detectors

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

physics.ins-det↗

Sub-Microsecond X-Ray Imaging Using Hole-Collecting Schottky type CdTe with Charge-Integrating Pixel Array Detectors

CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which can alter the response of the material over time and with accumulated dose. Most prior studies used long integration times or CdTe that was not of the hole-collecting Schottky type. We investigated the temporal response of hole-collecting Schottky type CdTe sensors on timescales ranging from tens of nanoseconds to several seconds. We found that the material shows signal persistence on the timescale of hundreds of milliseconds attributed to the detrapping of a shallow trap, and additional persistence on sub-microsecond timescales after polarization. The results show that this type of CdTe can be used for time resolved studies down to approximately 100 ns. However quantitative interpretation of the signal requires careful attention to bias voltages, polarization and exposure history.

physics.ins-det↗

Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods $<$150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128$\times$128 pixel array with (150 $μ$m)$^2$ pixels.

physics.ins-det↗

High Dynamic Range X-ray Detector Pixel Architectures Utilizing Charge Removal

Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron sources and x-ray free electron lasers (XFELs). The pixels described herein build on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging. These new pixels boast several orders of magnitude improvement in maximum flux over the MM-PAD, which is capable of measuring a sustained flux in excess of 10$^{8}$ x-rays/pixel/second while maintaining sensitivity to smaller signals, down to single x-rays. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a sustained flux >10$^{11}$ x-rays/pixel/second. Pixel front-end linearity was evaluated by direct current injection and results are presented. A small-scale readout ASIC utilizing these pixel architectures has been fabricated and the use of these architectures to increase single x-ray pulse dynamic range at XFELs is discussed briefly.

physics.ins-det↗

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy

We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition (DAQ) system, and preliminary results from experiments with 80 to 200 keV electron beams.

physics.ins-det↗