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Katsuhiro Tanaka

Publications and source records attributed to Katsuhiro Tanaka.

9 recordsLinked to original sources

Tunnel magnetoresistance effect with a Cr-doped $\mathrm{RuO_{2}}(110)$ altermagnet

Antiferromagnets can have a finite spin-polarization in the momentum space when their magnetic structure breaks the macroscopic time-reversal symmetry. This spin-polarization can produce a spin-polarized electric current even in antiferromagnets with vanishingly small net magnetizaton, which supports the antiferromagentic tunnel magnetoresistance (TMR) effect. In this paper, using first-principles calculations, we study the TMR effect with a doped altermagnet $\mathrm{Ru}_{1-x}\mathrm{Cr}_{x}\mathrm{O}_{2}$ with $(110)$ orientation, whose collinear antiferromagnetic structure breaks the time-reversal symmetry macroscopically. The momentum-dependent spin-polarization combined with the $(110)$ crystal orientation makes the electric current spin-polarized through bulk $\mathrm{Ru}_{1-x}\mathrm{Cr}_{x}\mathrm{O}_{2}(110)$. We further calculate the TMR effect in the $\mathrm{Ru}_{1-x}\mathrm{Cr}_{x}\mathrm{O}_{2}(110)/\mathrm{TiO_{2}}(110)/\mathrm{Ru}_{1-x}\mathrm{Cr}_{x}\mathrm{O}_{2}(110)$ tunnel junction and show that a finite TMR effect emerges. Based on the analysis of the tunneling transport, the TMR effect is attributed to the spin polarized tunneling transport with momentum dependence and the interfacial magnetic structures, as well as the spin-polarized electric current in a bulk form of $\mathrm{Ru}_{1-x}\mathrm{Cr}_{x}\mathrm{O}_{2}(110)$.

cond-mat.mtrl-sci

Ab initio study of magnetoresistance effect in $\mathrm{Mn_{3}Sn}/\mathrm{MgO}/\mathrm{Mn_{3}Sn}$ antiferromagnetic tunnel junction

The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets with zero net spin polarization. In this paper, we study the TMR effect with the noncollinear antiferromagnet $\mathrm{Mn_{3}Sn}$ whose inverse $120^{\circ}$ antiferromagnetic order breaks the time-reversal symmetry. In particular, we employ the representative barrier material $\mathrm{MgO}$ as the tunnel insulator, and calculate the TMR effect in the $\mathrm{Mn_{3}Sn}(01\bar{1}0)/\mathrm{MgO}(110)/\mathrm{Mn_{3}Sn}$ magnetic tunnel junctions (MTJs), which has an optimal geometry for the spin-orbit torque switching of the magnetic configurations. We show that a finite TMR ratio reaching $\gtrsim 1000\%$ appears in the $\mathrm{Mn_{3}Sn}/\mathrm{MgO}/\mathrm{Mn_{3}Sn}$ MTJs, which is due to the spin splitting properties of $\mathrm{Mn_{3}Sn}$ in the momentum space combined with the screening effect of $\mathrm{MgO}$.

cond-mat.mes-hall

Approaches to tunnel magnetoresistance effect with antiferromagnets

The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with antiferromagnets, which do not possess a macroscopic spin polarization, has been proposed, and also been observed in experiments. In this topical review, we discuss recent developments in the TMR effect, particularly focusing on the TMR effect with antiferromagnets. First, we review how the TMR effect can occur in antiferromagnetic tunnel junctions. The Julliere model, which has been conventionally utilized to grasp the TMR effect with ferromagnets, breaks down for the antiferromagnetic TMR effect. Instead, we see that the momentum dependent spin splitting explains the antiferromagnetic TMR effect. After that, we revisit the TMR effect from viewpoint of the local density of states (LDOS). We particularly focus on the LDOS inside the barrier, and show that the product of the LDOS will qualitatively capture the TMR effect not only in the ferromagnetic tunnel junctions but also in the ferrimagnetic and antiferromagnetic tunnel junctions. This method is expected to work usefully for designing magnetic tunnel junctions.

cond-mat.mes-hall

First-principles study on tunnel magnetoresistance effect with Cr-doped RuO$_{2}$ electrode

We investigate the functionality of the $\mathrm{Cr}$-doped $\mathrm{RuO_{2}}$ as an electrode of the magnetic tunnel junction (MTJ), motivated by the recent experiment showing that $\mathrm{Cr}$-doping into the rutile-type $\mathrm{RuO_{2}}$ will be an effective tool to control its antiferromagnetic order and the resultant magnetotransport phenomena easily. We perform first-principles calculation of the tunnel magnetoresistance (TMR) effect in the MTJ based on the $\mathrm{Cr}$-doped $\mathrm{RuO_{2}}$ electrodes. We find that a finite TMR effect appears in the MTJ originating from the momentum-dependent spin splitting in the electrodes, which suggests that $\mathrm{RuO_{2}}$ with Cr-doping will work as the electrode of the MTJ. We also show that this TMR effect can be qualitatively captured using the local density of states inside the tunnel barrier.

cond-mat.mes-hall

Emergent zero-field anomalous Hall effect in a reconstructedrutileantiferromagnetic metal

Anomalous Hall effect (AHE) emerged in antiferromagnetic metals shows intriguing physics and application potential. In contrast to certain noncollinear antiferromagnets, rutile RuO$_2$ has been proposed recently to exhibit a crystal-assisted AHE with collinear antiferromagnetism. However, in RuO$_2$, the on-site magnetic moment accompanying itinerant 4d electrons is quite small, and more importantly, the AHE at zero external field is prohibited by symmetry because of the high-symmetry [001] direction of the Néel vector. Here, we show the AHE at zero field in the collinear antiferromagnet, Cr-doped RuO$_2$. The appropriate doping of Cr at Ru sites results in a rotation of the Néel vector from [001] to [110] and enhancement of the on-site magnetic moment by one order of magnitude while maintaining a metallic state with the collinear antiferromagnetism. The AHE with vanishing net moment in the Ru$_{0.8}$Cr$_{0.2}$O$_2$ exhibits an orientation dependence consistent with the [110]-oriented Néel vector. These results open a new avenue to manipulate AHE in antiferromagnetic metals.

cond-mat.mtrl-sci

Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions

We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which describe the magnetic tunnel junctions (MTJ). First, taking a conventional ferromagnetic MTJ as an example, we show that the product of the local density of states (LDOS) at the center of the barrier traces the TMR effect qualitatively. The LDOS inside the barrier has the information on the electrodes and the electron tunneling through the barrier, which enables us to easily evaluate the tunneling conductance more precisely than the conventional Julliere's picture. We then apply this method to the MTJs with collinear ferrimagnets and antiferromagnets. We find that the TMR effect in the ferrimagnetic and antiferromagnetic MTJs changes depending on the interfacial magnetic structures originating from the sublattice structure, which can also be captured by the LDOS. Our findings will reduce the computational cost for the qualitative evaluation of the TMR effect, and be useful for a broader search for the materials which work as the TMR devices showing high performance.

cond-mat.mes-hall

Finite temperature thermodynamic properties of the spin-1 nematics in an applied magnetic field

We study numerically the thermodynamic properties of the spin nematic phases in a magnetic field in the spin-1 bilinear-biquadratic model. When the field is applied, the phase transition temperature once goes up and then decreases rapidly toward zero, which is detected by the peak-shift in the specific heat. The underlying mechanism of the reentrant behavior is the entropic effect. In a weak field the high temperature paramagnetic phase rapidly loses its entropy while the ferroquadrupolar nematic phase remains robust by modifying the shape of the ferroquadrupolar moment. This feature serves as a fingerprint of generic ferroquadrupolar phases, while it is not observed for the case of antiferroquadrupoles.

cond-mat.str-el

Abundant quadrupolar or nematic phases driven by the Heisenberg interactions in a spin-1 dimer system forming a bilayer

We explore several classes of quadrupolar ordering in a system of antiferromagnetically coupled quantum spin-1 dimers, which are stacked in the triangular lattice geometry forming a bilayer. Low-energy properties of this model is described by an $\mathcal{S}=1$ hard-core bosonic degrees of freedom defined on each dimer-bond, where the singlet and triplet states of the dimerized spins are interpreted as the vacuum and the occupancy of boson, respectively. The number of bosons per dimer and the magnetic and density fluctuations of bosons are controlled by the inter-dimer Heisenberg interactions. In a solid phase where each dimer hosts one boson and the inter-dimer interaction is weak, a conventional spin nematic phase is realized by the pair-fluctuation of bosons. Larger inter-dimer interaction favors Bose Einstein condensates (BEC) carrying quadrupolar moments. Among them, we find one exotic phase where the quadrupoles develop a spatially modulated structure on the top of a uniform BEC, interpreted in the original dimerized spin-1 model as coexistent $p$-type nematic and 120$^\circ$-magnetic correlations. This may explain an intriguing nonmagnetic phase found in Ba$_{3}$ZnRu$_{2}$O$_{9}$.

cond-mat.str-el

Origin of Biquadratic Exchange Interactions in a Mott Insulator as a Driving Force of Spin Nematic Order

We consider a series of Mott insulators in unit of two orbitals each hosting spin-1/2 electron, and by pairing two spin-1/2 into spin-1 triplet, derive the effective exchange interaction between the adjacent units via fourth order perturbation theory. It turns out that the biquadratic exchange interaction between spin-1, which is one of the origins of the nematic order, arises only in processes where the four different electrons exchange cyclically along the twisted loop, which we call "twisted ring exchange" processes. We show that the term becomes the same order with the Heisenberg exchange interactions when the on-orbital Coulomb interaction is not too large. Whereas, the inter-orbital Coulomb interactions give rise to additional processes that cancel the twisted ring exchange, and strongly suppresses the biquadratic term. The Mott insulator with two electrons on degenerate two orbitals is thus not an ideal platform to study such nematic orders.

cond-mat.str-el