arXiv subjects

Kawal Sawhney

Publications and source records attributed to Kawal Sawhney.

4 recordsLinked to original sources

arXiv2026

Pendellösung length-scale neutron and X-ray interferometry

Neutron and X-ray perfect-crystal interferometers (PCIs) are powerful platforms for studies of fundamental physics and phase-contrast imaging. Further enhancing several PCI capabilities requires reducing crystal blade thickness to the micron scale, which minimizes dynamical-diffraction image blur, permits operation in the pendellösung regime where blade thickness controls beam splitting, and reduces absorption for simultaneous neutron and X-ray operation. However, fabricating multiple crystal blades with identical micrometer-scale thicknesses over centimeter-scale areas remains a major challenge. Here, using a non-etching sub-micron fabrication technique, we demonstrate silicon triple-Laue interferometers with equal-blade-thicknesses of 110 $μ$m and 350 $μ$m, operated with both neutrons and X-rays. These devices are the thinnest PCIs realized to date, enabling a factor-of-six reduction in dynamical-diffraction beam spreading for improved phase-contrast imaging, while reaching the single pendellösung length regime in which crystal thickness provides an experimentally accessible control parameter for engineered quantum-optical beam splitting of plane-wave inputs. These results motivate multi-blade PCI designs utilizing identical half-pendellösung crystal lamellae that are proposed for neutron spin--orbit and electric dipole moment measurements.

physics.app-ph↗

arXiv2026

A critical consideration of X-ray detectors based on Ga2O3: excitation, carrier transport mechanisms and performance standardization

X-ray detection underpins a wide range of applications in medicine, security, industrial inspection, scientific research for non-destructive imaging and material analysis. The rapid development of Ga2O3-based X-ray detectors offers a promising pathway toward next-generation detectors with high sensitivity, low noise, and harsh environment applications, benefiting from its intrinsic material properties such as high density, wide band gap energy, and high thermal-chemical stability. However, the underlying device operating mechanisms, including both carrier excitation and transport processes, have not yet been adequately studied, largely due to the misuse of X-ray sources in previous studies. Besides, benchmarking of device characteristics has been problematic due to experimental or data analysis issues, as well as misunderstandings of the applied equations associated with parameter definitions. In this work, we have designed and performed an instructive research work based on epitaxial beta-Ga2O3:Si and its planar Schottky detectors, measured with energy-tuneable monochromatic X-ray beams on a synchrotron beamline, clarifying the device excitation and carrier transport mechanisms with properly benchmarked device performance. In the end, we propose a set of protocols for correctly measuring and analysing the device performance. The proposed protocols are broadly applicable and can be readily extended to other semiconductor X-ray detectors.

physics.ins-det↗

arXiv2017

Investigations into the impact of locally modified sensor architectures on the detection efficiency of silicon micro-strip sensors

The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 {\upmu}m. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

physics.ins-det↗

arXiv2016

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

physics.ins-det↗