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Kazuhiro Kuruma

Publications and source records attributed to Kazuhiro Kuruma.

14 recordsLinked to original sources

Purcell-enhanced spin-phonon coupling with a single color center

The radiative properties of atoms are inherently linked to their surrounding environment. Placing an electromagnetic resonator around atoms can enhance spontaneous emission, as shown by Purcell in the 1940s. This approach is now routinely used in quantum computing and communication to channel photons emitted by atoms into well-defined modes and control atom-photon interactions. For solid-state artificial atoms, such as color-centers, the host lattice introduces an acoustic environment, allowing excited atoms to relax by emitting phonons. Here we observe the acoustic Purcell effect by constructing a specially engineered, microwave-frequency nanomechanical resonator around a color-center spin qubit in diamond. Using a co-localized optical mode of the structure that strongly couples to the color-center's excited state, we perform single-photon-level laser spectroscopy at milliKelvin temperatures and observe ten-fold faster spin relaxation when the spin qubit is tuned into resonance with a 12 GHz acoustic mode. Additionally, we use the color-center as an atomic-scale probe to measure the broadband phonon spectrum of the nanostructure up to a frequency of 28 GHz. Our work establishes a new regime of control for quantum defects in solids and paves the way for interconnects between atomic-scale quantum memories and qubits encoded in acoustic and superconducting devices.

quant-ph

Heterogeneously Integrated Diamond-on-Lithium Niobate Quantum Photonic Platform

Diamond photonics has enabled efficient interfaces for quantum memories and is predicted to be a critical component of quantum networks. However, scalable network architectures require spatial, temporal, and spectral control of photons, which relies on nonlinear and electro-optic functionalities that diamond alone cannot provide. Here, we demonstrate heterogeneous integration of a thin-film lithium niobate (TFLN) platform, which has strong chi-2 nonlinearity and electro-optic effects, with thin diamond films. We demonstrate high-Q diamond photonic crystal cavities (Q factors exceeding 5x10^4 at 735 nm) that are lithographically aligned with TFLN photonic backbone and critically coupled to it. This allows us to realize low-loss diamond-TFLN "escalators" (loss ~1 dB/coupler) that support efficient light transfer between them. At cryogenic temperatures (5K), we can collect photons emitted from silicon vacancies (SiVs) embedded within the diamond structure via the TFLN photonic circuit. This approach establishes a scalable route toward integrated photonic circuits for practical quantum networking and other technologies.

physics.optics

Three-dimensional imaging of threading dislocations in GaN by multimodal stimulated Raman scattering microscopy

Emerging gallium nitride (GaN) vertical power devices require high-quality GaN crystals with reduced crystal defects, especially threading dislocations (TDs), to harness the high critical electric field and electron mobility of the material. A strong demand for characterizing TDs has driven the development of many imaging techniques, such as multiphoton excited photoluminescence (MPPL) microscopy and spontaneous Raman microscopy. However, all these techniques lack the capability of visualizing densely existing TDs in a non-destructive and three-dimensional (3D) way or distinguishing the types of TDs. Here, we propose multimodal 3D stimulated Raman scattering (SRS) and MPPL microscopy to non-destructively characterize the TDs in free-standing GaN substrates. Leveraging strong SRS signals, we achieve an imaging speed 10^2-10^3 times faster than that of spontaneous Raman microscopy. This acceleration of the imaging speed enables 3D SRS imaging of the strain fields that are induced by TDs and correlated with the edge components of the Burgers vectors. Multimodal 3D SRS and MPPL imaging reveals rich information on TD features and behavior, including propagation directions, Burgers vectors, dislocation reactions, and their relationships. Furthermore, we present a deterministic identification method for screw-type TDs, which are regarded as killer defects causing leakage current in p-n junctions, by exploiting no SRS peak shifts at screw dislocations in combination with MPPL patterns. Our multimodal imaging technique will greatly advance the understanding of dislocations toward realizing high-quality GaN crystals and high-performance GaN devices.

physics.app-ph

Thin Film Lithium Niobate on Diamond (LiNDa) platform for Efficient Spin-Phonon Coupling

Negatively charged silicon vacancy (SiV) center in diamonds are leading candidates for solid-state quantum memories that can be controlled using electromagnetic or acoustic waves. The latter are particularly promising due to strong strain response of SiV, enabling large spin-phonon interaction strengths. Indeed, coherent spin control via surface acoustic waves (SAW) has been demonstrated and is essential for developing on-chip phononic quantum networks. However, the absence of piezoelectricity in diamond requires interfacing with a piezoelectric material for efficient transduction and delivery of acoustic waves to spins in diamonds. Here, we demonstrate a heterogeneously integrated phononic platform that combines thin-film lithium niobate (TFLN) with diamond to enable acoustic control of single SiV spins. Additionally, leveraging large SAW-induced strain at the location of SiV, we achieve coherent acoustic control of an electron spin with more than twofold improvement in Rabi frequency compared to the state-of-the-art devices based on aluminum nitride-on-diamond. This work represents a crucial step towards realizing phonon-based quantum information processing systems.

quant-ph

Purcell-enhanced emissions from diamond color centers in slow light photonic crystal waveguides

Quantum memories based on emitters with optically addressable spins rely on efficient photonic interfaces, often implemented as nanophotonic cavities with ideally narrow spectral linewidths and small mode volumes. However, these approaches require nearly perfect spectral and spatial overlap between the cavity mode and quantum emitter, which can be challenging. This is especially true in the case of solid-state quantum emitters that are often randomly positioned and can suffer from significant inhomogeneous broadening. An alternative approach to mitigate these challenges is to use slow-light waveguides that can enhance light-matter interaction across large optical bandwidths and large areas. Here, we demonstrate diamond slow light photonic crystal (PhC) waveguides that enable broadband optical coupling to embedded silicon-vacancy (SiV) color centers. We take advantage of the recently demonstrated thin-film diamond photonic platform to fabricate fully suspended two-dimensional PhC waveguides. Using this approach, we demonstrate waveguide modes with high group indices up to 70 and observe Purcell-enhanced emissions of the SiVs coupled to the waveguide mode. Our approach represents a practical diamond platform for robust spin-photon interfaces with color centers.

quant-ph

High-Q Cavity Interface for Color Centers in Thin Film Diamond

Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhance light-matter interaction and are essential ingredients of an efficient interface between spins and photons that are used to store and communicate quantum information respectively. Despite great effort, however, the realization of visible PhC cavities with high quality factor (Q) and design flexibility is challenging in diamond. Here, we demonstrate one- and two-dimensional PhC cavities fabricated in recently developed thin-film diamonds, featuring Q-factors of 1.8x10$^5$ and 1.6x10$^5$, respectively, the highest Qs for visible PhC cavities realized in any material. Importantly, our fabrication process is simple and high-yield, based on conventional planar fabrication techniques, in contrast to previous approaches that rely on complex undercut methods. We also demonstrate fiber-coupled 1D PhC cavities with high photon extraction efficiency, and optical coupling between a single SiV center and such a cavity at 4K achieving a Purcell factor of 13. The demonstrated diamond thin-film photonic platform will improve the performance and scalability of quantum nodes and expand the range of quantum technologies.

quant-ph

High Q-factor diamond optomechanical resonators with silicon vacancy centers at millikelvin temperatures

Phonons are envisioned as coherent intermediaries between different types of quantum systems. Engineered nanoscale devices such as optomechanical crystals (OMCs) provide a platform to utilize phonons as quantum information carriers. Here we demonstrate OMCs in diamond designed for strong interactions between phonons and a silicon vacancy (SiV) spin. Using optical measurements at millikelvin temperatures, we measure a linewidth of 13 kHz (Q-factor of ~440,000) for 6 GHz acoustic modes, a record for diamond in the GHz frequency range and within an order of magnitude of state-of-the-art linewidths for OMCs in silicon. We investigate SiV optical and spin properties in these devices and outline a path towards a coherent spin-phonon interface.

physics.optics

Engineering Phonon-Qubit Interactions using Phononic Crystals

The ability to control phonons in solids is key for diverse quantum applications, ranging from quantum information processing to sensing. Often, phonons are sources of noise and decoherence, since they can interact with a variety of solid-state quantum systems. To mitigate this, quantum systems typically operate at milli-Kelvin temperatures to reduce the number of thermal phonons. Here we demonstrate an alternative approach that relies on engineering phononic density of states, drawing inspiration from photonic bandgap structures that have been used to control the spontaneous emission of quantum emitters. We design and fabricate diamond phononic crystals with a complete phononic bandgap spanning 50 - 70 gigahertz, tailored to suppress interactions of a single silicon-vacancy color center with resonant phonons of the thermal bath. At 4 Kelvin, we demonstrate a reduction of the phonon-induced orbital relaxation rate of the color center by a factor of 18 compared to bulk. Furthermore, we show that the phononic bandgap can efficiently suppress phonon-color center interactions up to 20 Kelvin. In addition to enabling operation of quantum memories at higher temperatures, the ability to engineer qubit-phonon interactions may enable new functionalities for quantum science and technology, where phonons are used as carriers of quantum information.

quant-ph

Topologically-protected single-photon sources with topological slow light photonic crystal waveguides

Slow light waveguides are advantageous for implementing high-performance single-photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically-protected optical modes has recently been demonstrated. Here, we report single-photon sources using single quantum dots (QDs) embedded in topological slow light waveguides based on valley photonic crystals. We observe Purcell-enhanced single-photon emission from a QD into a topological slow light mode with a group index over 20 and its robust propagation even under the presence of sharp bends. These results pave the way for the realization of robust and high-performance single-photon sources indispensable for IQPCs.

physics.optics

Telecommunication-wavelength two-dimensional photonic crystal cavities in a thin single-crystal diamond membrane

We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~ 300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~ $8\times10^6$ and a relatively small mode volume of ~2$(λ/n)^3$. The cavities are fabricated in the membrane using electron-beam lithography and vertical dry etching. We observe cavity resonances over a wide wavelength range spanning the telecommunication O- and S-bands (1360 nm-1470 nm) with Q factors of up to ~1800. Our method offers a new direction for on-chip diamond nanophotonic applications in the telecommunication-wavelength range.

physics.optics

Coupling of a Single Tin-vacancy Center to a Photonic Crystal Cavity in Diamond

We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11,000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the beta factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.

physics.optics

Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity

We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.

quant-ph

Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots

Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which embed active emitters inside, are much lower than those of the passive structures because of large optical loss, presumably originating from light scattering by structural imperfections and/or optical absorptions. Here, we demonstrate a significant improvement of Q factors up to ~160,000 in GaAs active PhC nanocavities using a sulfur-based surface passivation technique. This value is the highest ever reported for any active PhC nanocavities with semiconductor quantum dots. The surface-passivated cavities also exhibit reduced variation in both Q factors and cavity resonant wavelengths. We find that the improvement in the cavity performance presumably arises from suppressed light absorption at the surface of the PhC's host material by performing a set of PL measurements in spectral and time domains. With the surface passivation technique, we also demonstrate a strongly-coupled single quantum dot-cavity system based on a PhC nanocavity with a high Q factor of ~100,000. These results will pave the way for advanced quantum dot-based cavity quantum electrodynamics and for GaAs micro/nanophotonic applications containing active emitters.

physics.app-ph

Single plasmon generation in an InAs/GaAs quantum dot in a transfer-printed plasmonic microring resonator

We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically-smooth silver surface. We fabricated this structure with the help of transfer printing, which enables the pick-and-place assembly of the complicated, heterogeneous three dimensional stack. We show that a high-order surface-plasmon-polariton transverse mode mediates efficient coupling between the InAs/GaAs quantum dots and the plasmonic cavity, paving the way for developing plasmonic quantum light sources based on the state-of-the-art solid-state quantum emitters. Experimentally, we observed Purcell-enhanced radiation from the quantum dot coupled to the plasmonic mode. We also observed a strong anti-bunching in the intensity correlation histogram measured for scattered photons from the plasmonic resonator, indicating single plasmon generation in the resonator. Our results will be important in the development of quantum plasmonic circuits integrating high-performance single plasmon generators.

physics.optics