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Kazuki Ohnishi

Publications and source records attributed to Kazuki Ohnishi.

4 recordsLinked to original sources

Determination of Burgers-vector directions of threading edge dislocations in GaN by phase-contrast microscopy

Phase-contrast microscopy enables rapid, nondestructive observation of threading dislocations in GaN, but the relationship between dislocation contrast and the Burgers vector has not been established. Here, we demonstrate that the in-plane Burgers-vector direction of threading edge dislocations in GaN can be determined from the arrangement of bright and dark contrast in phase-contrast microscopy images. The relationship was first established for threading edge dislocations in ammonothermal GaN whose Burgers vectors were independently determined by X-ray topography and was subsequently applied to hydride vapor phase epitaxy-grown GaN. The Burgers vector predicted from the phase contrast was verified by weak-beam dark-field TEM and large-angle convergent-beam electron diffraction. For the threading edge dislocations examined, the direction obtained by rotating the direction from the minimum of the dark contrast to the maximum of the bright contrast by 90° counterclockwise coincided with the Burgers-vector direction. Analysis based on the photoelastic effect further suggests that the phase contrast primarily reflects the sum of the two in-plane normal strain components, εxx + εyy, around the dislocation. These results demonstrate that phase-contrast microscopy can be used as a nondestructive optical method for determining the in-plane Burgers-vector direction of threading edge dislocations in GaN.

cond-mat.mtrl-sci↗

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

We demonstrate high-throughput three-dimensional imaging of threading dislocations in ammonothermal GaN wafers using polarized-light microscopy with collimated LED illumination. Threading dislocations exhibited focal-depth-dependent in-plane shifts, enabling visualization of their three-dimensional inclination behavior over large areas. Synchrotron radiation X-ray topography indicated that dislocations with identical in-plane Burgers vector components tended to exhibit similar trace geometries and inclination directions. The threading dislocations were found to be tilted by approximately 3.3° from the c-axis in directions perpendicular to their Burgers vectors, indicating climb-mediated motion associated with strain relaxation during crystal growth. These results demonstrate a simple nondestructive approach for large-area three-dimensional characterization of dislocations in GaN wafers.

cond-mat.mtrl-sci↗

Synchrotron-radiation X-ray topography and reticulography of bulk $β$-Ga$_2$O$_3$ crystals grown by the cold crucible method

The structural properties of a $β$-Ga$_2$O$_3$ single crystal grown by the oxide crystal growth from cold crucible (OCCC) method were investigated using synchrotron radiation X-ray topography and X-ray reticulography. The region grown beneath the seed exhibits high crystalline quality with a rocking curve full width at half maximum of about 26 arcsec. During diameter enlargement, a twist-type lattice misorientation develops between the central and laterally expanded regions, originating near the shoulder and propagating along boundaries parallel to the $\langle010\rangle$ growth direction. Dislocation analysis reveals that $\langle010\rangle$-oriented screw dislocations dominate the defect structure with densities of ~$10^{5}$cm$^{-2}$, while higher densities (~$10^{6}$cm$^{-2}$) appear in the wing region. These results clarify defect formation in OCCC-grown $β$-Ga$_2$O$_3$ and provide insights for optimizing growth conditions.

cond-mat.mtrl-sci↗

Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography

Burgers vectors (b) of threading dislocations (TDs) in an acidic ammonothermal-grown GaN substrate were investigated using synchrotron radiation x-ray topography (SR-XRT) by combining both reflection and transmission modes. Reflection XRT images recorded with six equivalent g vectors of 11-24 revealed spot-like contrasts corresponding to TDs. Based on the contrast conditions, the possible Burgers vectors were constrained, and the c-axis component of b for mixed-type TDs was estimated from the contrast size. Using transmission XRT images recorded under several two-beam diffraction conditions, the (0001) in-plane direction of b was evaluated based on the gb invisibility criterion. Furthermore, by analyzing the linewidths of dislocation images observed under kinematical diffraction contrast, the magnitude of the a-axis component of b was determined. By combining these analyses, the Burgers vectors of individual TDs, including edge- and mixed-type dislocations, were determined. In addition, a pair of screw-type TDs with opposite Burgers vectors, +1c, -1c, was observed in the transmission SR-XRT. These results demonstrate that the combined use of reflection and transmission SR-XRT provides a practical approach for complete determination of Burgers vectors in GaN substrates.

cond-mat.mtrl-sci↗