arXiv subjects

Kazuya Ando

Publications and source records attributed to Kazuya Ando.

29 records · Page 2Linked to original sources

arXiv2018

Extrinsic-Intrinsic Crossover of the Spin Hall Effect Induced by Alloying

We report the observation of the crossover between the extrinsic and intrinsic spin Hall effect induced by alloying. We found that the spin Hall angle, the ratio of the spin Hall conductivity to the electric conductivity, changes drastically by tuning the composition of Au-Cu alloy. The spin Hall angle changes the sign only in a limited range of the Cu concentration due to the extrinsic skew scattering, while the intrinsic contribution becomes dominant with increasing the Cu concentration. This observation provides essential information for fundamental understanding of spin-orbit physics.

cond-mat.mes-hall↗

arXiv2018

Intrinsic spin-orbit torque arising from Berry curvature in metallic-magnet/Cu-oxide interface

We report the observation of the intrinsic damping-like spin-orbit torque (SOT) arising from the Berry curvature in metallic-magnet/CuO$_x$ heterostructures. We show that a robust damping-like SOT, an order of magnitude larger than a field-like SOT, is generated in the heterostructure despite the absence of the bulk spin-orbit effect in the CuO$_x$ layer. Furthermore, by tuning the interface oxidation level, we demonstrate that the field-like SOT changes drastically and even switches its sign, which originates from oxygen modulated spin-dependent disorder. These results provide an important information for fundamental understanding of the physics of the SOTs.

cond-mat.mtrl-sci↗

arXiv2017

Current-induced magnetization switching using electrically-insulating spin-torque generator

Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero current-induced SOT is expected because of the broken inversion symmetry; an electrical insulator can be a spin-torque generator. Here, we demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic material, Pt, turns the heavy metal into an electrically-insulating generator of the SOTs, enabling the electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by electrically-insulating oxides. We further found that the SOTs generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration. These findings open a route towards energy-efficient, voltage-programmable spin-orbit devices based on solid-state switching of heavy metal oxidation.

cond-mat.mtrl-sci↗

arXiv2016

Rashba-Edelstein Magnetoresistance in Metallic Heterostructure

We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

cond-mat.mes-hall↗

arXiv2016

Asymmetric Pt/Co/Pt structure as a platform for extracting pure spin Hall torque

We have quantitatively studied the spin-orbit torque purely generated by the spin Hall effect in a wide range of temperatures by intensionally eliminating the Rashba spin-orbit torque using Pt/Co/Pt trilayers with asymmetric thicknesses of the top and bottom Pt layers. The vanishingly small contribution from the Rashba effect has been confirmed through the vector measurements of the current-induced effective fields. In order to precisely determine the value of the spin Hall torque, the complete cancelation of the spin Hall torque has been verified by fabricating symmetric Pt/Co/Pt structure on SiO2 and Gd3Ga5O12 (GGG) substrates. Despite of the complete cance- lation on the GGG substrate, the spin Hall torque cannot be completely canceled out even when the top and bottom Pt layers have same thicknesses on the SiO2 substrate, which suggests that Pt/Co/Pt trilayers on a GGG substrate is a suitable system for precise measurements of the spin Hall torque. The result of the vector measurements on Pt/Co/Pt/GGG from 300 to 10 K shows that the spin Hall torque is almost independent of temperature, which is quantitatively reproduced under the assumption of the temperature-independent spin Hall angle of Pt.

cond-mat.mtrl-sci↗

arXiv2015

Spin-current emission governed by nonlinear spin dynamics

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

cond-mat.mes-hall↗

arXiv2014

Enhancement of Spin Pumping in $\mathrm{Y_3Fe_5O_{12}/Pt/Ni_{81}Fe_{19}}$ Trilayer Film

We study spin pumping in a $\mathrm{Y_3Fe_5O_{12}(YIG)/Pt/Ni_{81}Fe_{19}(Py)}$ trilayer film by means of the inverse spin Hall effect (ISHE). When the ferromagnets are not excited simultaneously by a microwave, ISHE-induced voltage is of the opposite sign at each ferromagnetic resonance (FMR). The opposite sign is consistent with spin pumping of bilayer films. On the other hand, the voltage is of the same sign at each FMR when both the ferromagnets are excited simultaneously. Futhermore, the voltage greatly increases in magnitude. The observed voltage is unconventional; neither its sign nor magnitude can be expected from spin pumping of bilayer films. Control experiments show that the unconventional voltage is dominantly induced by spin pumping at the Py/Pt interface. Interaction between YIG and Py layers is a possible origin of the unconventional voltage.

cond-mat.mtrl-sci↗

arXiv2013

Spin rectification induced by dynamical Hanle effect

Dynamic response of spin accumulation to a time-dependent magnetic field has been investigated in a ferromagnetic/nonmagnetic bilayer under ferromagnetic resonance. In this system, magnetization precession driven by a microwave generates direct-current (dc) and alternate-current (ac) spin accumulation in the nonmagnetic layer by the spin pumping. The ac spin accumulation is coupled with the microwave magnetic field through a dynamical Hanle spin precession, giving rise to rectified spin accumulation comparable with the dc spin accumulation directly generated by the spin pumping.

cond-mat.mes-hall↗

arXiv2013

Spin-pumping-induced spin transport in p-type Si at room temperature

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

cond-mat.mtrl-sci↗

arXiv2011

Observation of the inverse spin Hall effect in silicon

The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin-orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.

cond-mat.mtrl-sci↗

arXiv2011

Two-Dimensional Propagation of a Photoinduced Spin Wave Packet

We report the two-dimensional propagation of photoinduced spin wave packets in Bi-doped rare-earth iron garnet. Spin waves were excited nonthermally and impulsively by a circularly polarized light pulse via the inverse Faraday effect. Space- and time resolved spin waves were detected with a magneto-optical pump-probe technique. We investigated propagation in two directions, parallel and perpendicular to the magnetic field. Backward volume magnetostatic waves (BVMSWs) were detected in both directions. The frequency of BVMSWs depends on the propagation direction. The experimental results agreed well with the dispersion relation of BVMSWs.

cond-mat.mes-hall↗