arXiv subjects

Ke-Ke Bai

Publications and source records attributed to Ke-Ke Bai.

14 recordsLinked to original sources

arXiv2022

Exploring Native Atomic Defects in NiTe2

Nickel ditelluride (NiTe2), a new discovered type-II Dirac semimetal whose Dirac node lies close to its Fermi level, is expected to exhibit exotic phenomena including Lifshitz transition and superconductivity. As we know, defects are inevitable for transition metal dichalcogenides and have significant impacts on the optical and electronic properties. However, the systematic study of defects in NiTe2 is still lack. Here, by using high-resolution scanning tunneling microscopy combined with first-principles calculations, the point defects including the vacancy, intercalation and antisite defects in NiTe2 are systematically investigated. We identified five main types native defects and revealed that the growth condition could affect the type of native defects. By controlling the ratio of ingredient during synthesis, the types of point defects are expected to be manipulated, especially antisite defects. Additionally, we find native defects could slightly dope the topological surface states. Our results provide a facile way to manipulate defects for future optimizing the electronic properties of NiTe2 and other related materials.

cond-mat.mtrl-sci↗

arXiv2020

Breaking whispering-gallery modes of massless Dirac fermions in graphene quantum dots by Coulomb interaction

Coulomb interaction is of central importance in localized energy levels (bound states) or electronic flat bands and could result in many exotic quantum phases, such as magnetic, superconducting, and topological phases in graphene systems1-14. In graphene monolayer, the relativistic massless Dirac fermion nature of the charge carriers enables us to realize unprecedented quasibound states, which are trapped temporarily via whispering-gallery modes (WGMs) with the lifetime (trapping time) of ~ 10 fs, in circular graphene quantum dots (GQDs)15-20. Here we show that Coulomb interaction still plays a dominating role in determining the electronic properties of the temporarily-confined quasibound states. Our scanning tunneling microscopy (STM) and spectroscopy (STS) measurements demonstrate that the discrete quasibound state in a GQD will split into two peaks when it is partially filled. The energy separation of the two split peaks increases linear with inverse effective radius of the GQDs, indicating that the splitting arises from the Coulomb interaction. Moreover, we show that the real space distribution of the two split states separates in different regions of the GQD to reduce the Coulomb interaction, leading to the breaking of the WGM of the quasibound states.

cond-mat.mes-hall↗

arXiv2018

Segregation growth and self-organization of ordered S atomic superlattices confined at interface between graphene and substrates

Ordered atomic-scale superlattices on surface hold great interest both for basic science and for potential applications in advanced technology. However, controlled fabrication of superlattices down to atomic scale has proven exceptionally challenging. Here we demonstrate the segregation-growth and self-organization of ordered S atomic superlattices confined at the interface between graphene and S-rich Cu substrates. Scanning tunneling microscope (STM) studies show that, by finely controlling the growth temperature, we obtain well-ordered S (sub)nanometer-cluster superlattice and monoatomic superlattices with various periods at the interface. These atomic superlattices are stable in atmospheric environment and robust even after high-temperature annealing (~ 350 oC). Our experiments demonstrate that the S monoatomic superlattice can drive graphene into the electronic Kekulé distortion phase when the period of the ordered S adatoms is commensurate with graphene lattice. Our results not only open a road to realize atomic-scale superlattices at interfaces, but also provide a new route to realize exotic electronic states in graphene.

cond-mat.mtrl-sci↗

arXiv2017

Realization of room-temperature ferromagnetic semiconducting state in graphene monolayer

Room-temperature ferromagnetic semiconductor is vital in nonvolatile digital circuits and it can provide an idea system where we can make use of both charge and spin of electrons. However, seeking room-temperature ferromagnetic semiconductors is still just an appealing idea that has never been realized in practice up to now. Here we demonstrate that graphene monolayer, hybridized with underlying Ni(111) substrate, is the room-temperature ferromagnetic semiconductor that has been continuously searched for decades. Our spin-polarized scanning tunnelling microscopy (STM) experiments, complemented by first-principles calculations, demonstrate explicitly that the interaction between graphene and the Ni substrate generates a large gap in graphene and simultaneously leads to a relatively shift between majority- and minority-spin bands. Consequently, the graphene sheet on the Ni substrate exhibits a spin-polarized gap with energy of several tens meV even at room-temperature. This result makes the science and applications of room-temperature ferromagnetic semiconductors achievable and raises hopes of graphene-based novel information technologies.

cond-mat.mtrl-sci↗

arXiv2017

The tunnelling spectra of quasi-free-standing graphene monolayer

With considering the great success of scanning tunnelling microscopy (STM) studies of graphene in the past few years, it is quite surprising to notice that there is still a fundamental contradiction about the reported tunnelling spectra of quasi-free-standing graphene monolayer. Many groups observed V-shape spectra with linearly vanishing density-of-state (DOS) at the Dirac point, whereas, the others reported spectra with a gap of 60 meV pinned to the Fermi level in the quasi-free-standing graphene monolayer. Here we systematically studied the two contradicted tunnelling spectra of the quasi-free-standing graphene monolayer on several different substrates and provided a consistent interpretation about the result. The gap in the spectra arises from the out-of-plane phonons in graphene, which mix the Dirac electrons at the Brillouin zone corners with the nearly free-electron states at the zone center. Our experiment indicated that interactions with substrates could effectively suppress effects of the out-of-plane phonons in graphene and enable us to detect only the DOS of the Dirac electrons in the spectra. We also show that it is possible to switch on and off the out-of-plane phonons of graphene at the nanoscale, i.e., the tunnelling spectra show switching between the two distinct features, through voltage pulses applied to the STM tip.

cond-mat.mtrl-sci↗

arXiv2017

Generating nanoscale and atomically-sharp p-n junctions in graphene via monolayer-vacancy-island engineering of Cu surface

Creation of high quality p-n junctions in graphene monolayer is vital in studying many exotic phenomena of massless Dirac fermions. However, even with the fast progress of graphene technology for more than ten years, it remains conspicuously difficult to generate nanoscale and atomically-sharp p-n junctions in graphene. Here, we employ monolayer-vacancy-island engineering of Cu surface to realize nanoscale p-n junctions with atomically-sharp boundaries in graphene monolayer. The variation of graphene-Cu separations around the edges of the Cu monolayer-vacancy-island affects the positions of the Dirac point in graphene, which consequently lead to atomically-sharp p-n junctions with the height as high as 660 meV in graphene. The generated sharp p-n junctions isolate the graphene above the Cu monolayer-vacancy-island as nanoscale graphene quantum dots (GQDs) in a continuous graphene sheet. Massless Dirac fermions are confined by the p-n junctions for a finite time to form quasi-bound states in the GQDs. By using scanning tunneling microscopy, we observe resonances of quasi-bound states in the GQDs with various sizes and directly visualize effects of geometries of the GQDs on the quantum interference patterns of the quasi-bound states, which allow us to test the quantum electron optics based on graphene in atomic scale.

cond-mat.mes-hall↗

arXiv2017

Massless Dirac Fermions Trapping in a Quasi-one-dimensional npn Junction of a Continuous Graphene Monolayer

Massless Dirac fermions in graphene provide unprecedented opportunities to realize the Klein paradox, which is one of the most exotic and striking properties of relativistic particles. In the seminal theoretical work [Katsnelson et al., Nat. Phys. 2 620 (2006)], it was predicted that the massless Dirac fermions can pass through one-dimensional (1D) potential barriers unimpededly at normal incidence. Such a result seems to preclude confinement of the massless Dirac fermions in graphene by using 1D potential barriers. Here, we demonstrate, both experimentally and theoretically, that massless Dirac fermions can be trapped in quasi-1D npn junction of a continuous graphene monolayer. Because of highly anisotropic transmission of the massless Dirac fermions at n-p junction boundaries (the so-called Klein tunneling in graphene), charge carries incident at large oblique angles will be reflected from one edge of the junction with high probability and continue to bounce from the opposite edge. Consequently, these electrons are trapped for a finite time to form quasi-bound states in the quasi-1D npn junction. The quasi-bound states seen as pronounced resonances are probed and the quantum interference patterns arising from these states are directly visualized in our scanning tunneling microscope measurements.

cond-mat.mes-hall↗

arXiv2015

Detecting giant electron-hole asymmetry in graphene monolayer generated by strain and charged-defect scattering via Landau level spectroscopy

The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi velocities of electrons and holes are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the and are measured as 1.2 x 106 m/s and 1.02 x106 m/s, respectively. This giant asymmetry originates from enhanced next-nearest-neighbor hopping in the strained region. Around positively charged-defect, we observe opposite electron-hole asymmetry, and the and are measured to be 0.86x 106 m/s and 1.14 x106 m/s, respectively. Such a large asymmetry is attributed to the fact that the massless Dirac fermions in graphene monolayer are scattered more strongly when they are attracted to the charged-defect than when they are repelled from it.

cond-mat.mtrl-sci↗

arXiv2015

Observation of Valley-polarized Landau Levels in Strained Graphene

In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed because the pseudo-magnetic fields are of opposite directions in the K and K' valleys of graphene. Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of strained graphene on Rh foil. We direct observed valley splitting of the Landau level induced by the coexistence of the pseudo-magnetic fields and external magnetic fields. The observed result paves the way to exploit novel electronic properties in graphene through the combination of the pseudo-magnetic fields and the external magnetic fields.

cond-mat.mes-hall↗

arXiv2015

Magnetic-field-assisted electron confinement and valley splitting in strained graphene

Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling microscopy and spectroscopy and identify their spatially modulated Dirac points, demonstrating the effect of overlap of Cu and graphene wave functions on the charge transfer between them5. By applying a magnetic field of 8 Tesla, electron confinement, as revealed by regularly spaced sharp resonances6,7, is observed in the strained graphene. In some regions of the strained graphene, repetitive pairs of resonance peaks appear in the tunnelling spectra. This provides direct and compelling evidence for lifting of valley degeneracy due to the coexistence of both the magnetic field and the pseudomagnetic field.

cond-mat.mtrl-sci↗

arXiv2014

Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy

Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.

cond-mat.mes-hall↗

arXiv2014

Creating One-dimensional Nanoscale Periodic Ripples in a Continuous Mosaic Graphene Monolayer

In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We also demonstrate that the observed rippling modes are beyond the descriptions of continuum mechanics due to the decoupling of graphene bending and tensional deformations. Scanning tunneling spectroscopy measurements indicate that the nanorippling generates a periodic electronic superlattice and opens a zero-energy gap of about 130 meV in graphene. This result may pave a facile way for tailoring the structures and electronic properties of graphene.

cond-mat.mes-hall↗

arXiv2013

Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of graphene by introducing a significant bandgap, which opens an avenue towards all-graphene electronics.

cond-mat.mes-hall↗

arXiv2012

Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new type of graphene transistors in its vertical direction.

cond-mat.mes-hall↗