arXiv subjects

Keji Lai

Publications and source records attributed to Keji Lai.

At least 19 recordsLinked to original sources

arXiv2026

Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States

We report local conductivity imaging of edge states in monolayer graphene by millikelvin microwave impedance microscopy (MIM). At the charge-neutrality point, as the magnetic field increases, the local conductivity at the edge drops to zero more slowly than in the bulk. This behavior is consistent with the calculated spatial profile of the charge gap in the canted antiferromagnetic phase. For comparison, we also perform microwave imaging of integer quantum Hall states away from neutrality, which host dissipationless chiral edge channels. The evolution of the edge signal as a function of the bulk gap is fundamentally different between the Landau level filling factor $\nu = 0$ and $|\nu| \ge 1$ integer quantum Hall states, which can be qualitatively explained by numerical simulations and theoretical analysis. Our results provide a comprehensive microscopic picture of the edge and bulk states as the Fermi level moves across the unique Landau-level spectrum of graphene.

cond-mat.str-el↗

arXiv2026

Visualization of Gaussian Mode Profile in Gigahertz Surface-Acoustic-Wave Resonators

Surface-acoustic-wave (SAW) resonators operating at gigahertz (GHz) frequencies are widely used in wireless telecommunication and quantum information processing. Successful implementation of such resonators calls for detailed microscopic understanding of their mode profiles, energy dissipation channels, and imperfections from microfabrication. In this work, we report on the visualization of acoustic waves in LiNbO3 SAW resonators by transmission-mode microwave impedance microscopy (TMIM). The Gaussian mode profile tightly confined by reflecting mirrors is vividly seen in the TMIM images, from which the linewidth of the resonator itself can be extracted. The spatially resolved acoustic profile also allows us to perform failure analysis on faulty devices. Our work establishes a pathway for further optimization of SAW resonators for classical and quantum acoustic applications.

physics.optics↗

arXiv2025

Mo Atom Rearrangement Drives Layer-Dependent Reactivity in Two-Dimensional MoS2

Two-dimensional (2D) materials offer a valuable platform for manipulating and studying chemical reactions at atomic level, owing to the ease of controlling their microscopic structure at the nanometer scale. While extensive research has been conducted on the structure-dependent chemical activity of 2D materials, the influence of structural transformation during the reaction remains largely unexplored. In this work, we report the layer-dependent chemical reactivity of MoS2 during a nitridation atomic substitution reaction and attribute it to the rearrangement of Mo atoms. Our results show that the chemical reactivity of MoS2 decreases as the number of layers is reduced in the few-layer regime. In particular, monolayer MoS2 exhibits significantly lower reactivity compared to its few-layer and multilayer counterparts. Atomic-resolution transmission electron microscope (TEM) reveals that MoN nanonetworks form as reaction products from monolayer and bilayer MoS2, with the continuity of the MoN crystals increasing with layer number, consistent with the local conductivity mapping data. The layer-dependent reactivity is attributed to the relative stability of the hypothetically formed MoN phase which retain the number of Mo atomic layers present in the precursor. Specifically, the low chemical reactivity of monolayer MoS2 is attributed to the high energy cost associated with Mo atom diffusion and migration necessary to form multi-layer Mo lattices in the thermodynamically stable MoN phase. This study underscores the critical role of lattice rearrangement in governing chemical reactivity and highlights the potential of 2D materials as versatile platforms for advancing the understanding of materials chemistry at atomic scale.

cond-mat.mtrl-sci↗

arXiv2024

Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy

The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information of the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2 - 3 cm2/Vs, consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical timescale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications.

cond-mat.mtrl-sci↗

arXiv2024

Klein Tunneling of Gigahertz Elastic Waves in Nanoelectromechanical Metamaterials

Klein tunneling, the perfect transmission of a normally incident relativistic particle through an energy barrier, has been tested in various electronic, photonic, and phononic systems. Its potential in guiding and filtering classical waves in the Ultra High Frequency regime, on the other hand, has not been explored. Here, we report the realization of acoustic Klein tunneling in a nanoelectromechanical metamaterial system operating at gigahertz frequencies. The piezoelectric potential profiles are obtained by transmission-mode microwave impedance microscopy, from which reciprocal-space maps can be extracted. The transmission rate of normally incident elastic waves is near unity in the Klein tunneling regime and drops significantly outside this frequency range, consistent with microwave network analysis. Strong angular dependent transmission is also observed by controlling the launching angle of the emitter interdigital transducer. This work broadens the horizon in exploiting high-energy-physics phenomena for practical circuit applications in both classical and quantum regimes.

physics.app-ph↗

arXiv2024

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moir\'e Superlattice

We investigate how many-electron excited states emerge in twisted MoSe2 homobilayers when the lattice reconstructions evolve. Notably, we identify a new trion resonance that arises in the transition regime of lattice reconstruction, where gradual changes in atomic alignment between the layers occur. Magnetic field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Gamma valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moir\'e supercell. We propose that the new trion resonance is a "charge-transfer" trion, in which the electron-hole pair is spatially separated from the doped hole. The emergence of these complex excited states stems from the distinct moir\'e potentials acting on holes and excitons, resulting in their different spatial distribution within the superlattice.

cond-mat.mes-hall↗

arXiv2023

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveil electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier's influence. The difference between dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trapping and releasing from localized states. The characteristic length scale of local fluctuations, as determined by autocorrelation analysis, is about 200 nm. Using random-barrier model, we can simulate the spatial variation of potential landscape, which underlies the mesoscopic conductivity distribution. Our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at microscopic level.

cond-mat.dis-nn↗

arXiv2023

Electrostatic moir\'e potential from twisted-hBN layers

Moir\'e superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moir\'e potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. {\Gamma} vs. K). In contrast, twisted hexagonal boron nitride (hBN) layers are predicted to impose a periodic electrostatic potential that may be used to engineer the properties of an adjacent functional thin layer. Here, we show that this potential is described by a simple theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. We demonstrate that the potential depth and profile can be further controlled by assembling a double moir\'e structure. When the twist angles are similar at the two interfaces, the potential is deepened by adding the potential from the two twisted interfaces, reaching ~ 400 meV. When the twist angles are dissimilar at the two interfaces, multi-level polarization states are observed. As an example of controlling a functional layer, we demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in a semiconductor monolayer. These findings suggest exciting opportunities for engineering properties of an adjacent functional layer using the surface potential of a twisted hBN substrate.

cond-mat.mtrl-sci↗

arXiv2023

Implementing Microwave Impedance Microscopy in a Dilution Refrigerator

We report the implementation of a dilution-refrigerator-based scanning microwave impedance microscope (MIM) with a base temperature of ~ 100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates. Both the conductive edge modes and topological phase transitions near coercive fields of Cr-doped and V-doped layers are visualized in the field-dependent results. Our work establishes the experimental platform for investigating nanoscale quantum phenomena under ultralow temperatures.

cond-mat.mes-hall↗

arXiv2023

Nanoscale Imaging of Super-High-Frequency Microelectromechanical Resonators with Femtometer Sensitivity

Implementing microelectromechanical system (MEMS) resonators calls for detailed microscopic understanding of the devices, such as energy dissipation channels, spurious modes, and imperfections from microfabrication. Here, we report the nanoscale imaging of a freestanding super-high-frequency (3 ~ 30 GHz) lateral overtone bulk acoustic resonator with unprecedented spatial resolution and displacement sensitivity. Using transmission-mode microwave impedance microscopy, we have visualized mode profiles of individual overtones and analyzed higher-order transverse spurious modes and anchor loss. The integrated TMIM signals are in good agreement with the stored mechanical energy in the resonator. Quantitative analysis with finite-element modeling shows that the noise floor is equivalent to an in-plane displacement of 10 fm/sqrt(Hz) at room temperatures, which can be further improved under cryogenic environments. Our work contributes to the design and characterization of MEMS resonators with better performance for telecommunication, sensing, and quantum information science applications.

physics.app-ph↗

arXiv2022

Observation of Gigahertz Topological Valley Hall Effect in Nanoelectromechanical Phononic Crystals

Topological phononics offers numerous opportunities in manipulating elastic waves that can propagate in solids without being backscattered. Due to the lack of nanoscale imaging tools that aid the system design, however, acoustic topological metamaterials have been mostly demonstrated in macroscale systems operating at low (kilohertz to megahertz) frequencies. Here, we report the realization of gigahertz topological valley Hall effect in nanoelectromechanical AlN membranes. Propagation of elastic wave through phononic crystals is directly visualized by microwave microscopy with unprecedented sensitivity and spatial resolution. The valley Hall edge states, protected by band topology, are vividly seen in both real- and momentum-space. The robust valley-polarized transport is evident from the wave transmission across local disorder and around sharp corners, as well as the power distribution into multiple edge channels. Our work paves the way to exploit topological physics in integrated acousto-electronic systems for classical and quantum information processing in the microwave regime.

cond-mat.mes-hall↗

arXiv2022

Nonvolatile Electric-Field Control of Inversion Symmetry

In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.

cond-mat.mtrl-sci↗

arXiv2021

Visualization of Acoustic Power Flow in Suspended Thin-film Lithium Niobate Phononic Devices

We report direct visualization of gigahertz-frequency acoustic waves in lithium niobate phononic circuits. Primary propagation parameters, such as the power flow angle (PFA) and propagation loss (PL), are measured by transmission-mode microwave impedance microscopy (TMIM). Using fast Fourier transform, we can separately analyze forward and backward propagating waves and quantitatively evaluate the propagation loss. Our work provides insightful information on the propagation, diffraction, and attenuation in piezoelectric thin films, which is highly desirable for designing and optimizing phononic devices for microwave signal processing.

cond-mat.mes-hall↗

arXiv2021

Superior Photo-carrier Diffusion Dynamics in Organic-inorganic Hybrid Perovskites Revealed by Spatiotemporal Conductivity Imaging

The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 microsecond and 10 microseconds correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3 ~ 5 micrometers) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.

cond-mat.mes-hall↗

arXiv2021

Direct Visualization of Gigahertz Acoustic Wave Propagation in Suspended Phononic Circuits

We report direct visualization of gigahertz-frequency Lamb waves propagation in aluminum nitride phononic circuits by transmission-mode microwave impedance microscopy (TMIM). Consistent with the finite-element modeling, the acoustic eigenmodes in both a horn-shaped coupler and a sub-wavelength waveguide are revealed in the TMIM images. Using fast Fourier transform filtering, we quantitatively analyze the acoustic loss of individual Lamb modes along the waveguide and the power coupling coefficient between the waveguide and the parabolic couplers. Our work provides insightful information on the propagation, mode conversion, and attenuation of acoustic waves in piezoelectric nanostructures, which is highly desirable for designing and optimizing phononic devices for microwave signal processing and quantum information transduction.

cond-mat.mes-hall↗

arXiv2021

Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator

Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states.

cond-mat.str-el↗

arXiv2021

Electrical Control of Surface Acoustic Waves

Acoustic waves at microwave frequencies have been widely used in wireless communication and recently emerged as versatile information carriers in quantum applications. However, most acoustic devices are passive components, and dynamic control of acoustic waves in a low-loss and scalable manner remains an outstanding challenge, which hinders the development of phononic integrated circuits. Here we demonstrate electrical control of traveling acoustic waves on an integrated lithium niobate platform at both room and millikelvin temperatures. We modulate the phase and amplitude of the acoustic waves and demonstrate an acoustic frequency shifter by serrodyne phase modulation. Furthermore, we show reconfigurable nonreciprocal modulation by tailoring the phase matching between acoustic and quasi-traveling electric fields. Our scalable electro-acoustic platform comprises the fundamental elements for arbitrary acoustic signal processing and manipulation of phononic quantum information.

physics.app-ph↗

arXiv2020

Phonon Renormalization in Reconstructed MoS$_2$ Moir\'e Superlattices

In moir\'e crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moir\'e physics. Over a range of small twist angles, the phonon spectra evolve rapidly due to ultra-strong coupling between different phonon modes and atomic reconstructions of the moir\'e pattern. We develop a new low-energy continuum model for phonons that overcomes the outstanding challenge of calculating properties of large moir\'e supercells and successfully captures essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moir\'e crystals with nanometer-size supercells. The newly developed theory promotes a comprehensive and unified understanding of structural, optical, and electronic properties of moir\'e superlattices.

cond-mat.mes-hall↗