arXiv subjects

Ken-Ichiro Imura

Publications and source records attributed to Ken-Ichiro Imura.

At least 37 records · Page 2Linked to original sources

arXiv2014

One-dimensional topological insulator: a model for studying finite-size effects in topological insulator thin films

As a model for describing finite-size effects in topological insulator thin films, we study a one-dimensional (1D) effective model of a topological insulator (TI). Using this effective 1D model, we reveal the precise correspondence between the spatial profile of the surface wave function, and the dependence of the finite-size energy gap on the thickness (Lx) of the film. We solve the boundary problem both in the semi-infinite and slab geometries to show that the Lx-dependence of the size gap is a direct measure of the amplitude of the surface wave function at the depth of x=Lx+1 [here, the boundary condition is chosen such that the wave function vanishes at x=0]. Depending on the parameters, the edge state function shows either a damped oscillation (in the "TI-oscillatory" region of FIG. 2, or becomes overdamped (ibid., in the "TI-overdamped" phase). In the original 3D bulk TI, an asymmetry in the spectrum of valence and conduction bands is omnipresent. Here, we demonstrate by tuning this asymmetry one can drive a crossover from the TI-oscillatory to the TI-overdamped phase.

cond-mat.mes-hall↗

arXiv2013

Density of States Scaling at the Semimetal to Metal Transition in Three Dimensional Topological Insulators

The quantum phase transition between the three dimensional Dirac semimetal and the diffusive metal can be induced by increasing disorder. Taking the system of disordered $\mathbb{Z}_2$ topological insulator as an important example, we compute the single particle density of states by the kernel polynomial method. We focus on three regions: the Dirac semimetal at the phase boundary between two topologically distinct phases, the tricritical point of the two topological insulator phases and the diffusive metal, and the diffusive metal lying at strong disorder. The density of states obeys a novel single parameter scaling, collapsing onto two branches of a universal scaling function, which correspond to the Dirac semimetal and the diffusive metal. The diverging length scale critical exponent $ν$ and the dynamical critical exponent $z$ are estimated, and found to differ significantly from those for the conventional Anderson transition. Critical behavior of experimentally observable quantities near and at the tricritical point is also discussed.

cond-mat.mes-hall↗

arXiv2013

Unified description of Dirac electrons on a curved surface of topological insulators

Existence of a protected surface state described by a massless Dirac equation is a defining property of the topological insulator. Though this statement can be explicitly verified on an idealized flat surface, it remains to be addressed to what extent it could be general. On a curved surface, the surface Dirac equation is modified by the spin connection terms. Here, in the light of the differential geometry, we give a general framework for constructing the surface Dirac equation starting from the Hamiltonian for bulk topological insulators. The obtained unified description clarifies the physical meaning of the spin connection.

cond-mat.mes-hall↗

arXiv2013

Disordered weak and strong topological insulators

A global phase diagram of disordered weak and strong topological insulators is established numerically. As expected, the location of the phase boundaries is renormalized by disorder, a feature recognized in the study of the so-called topological Anderson insulator. Here, we report unexpected quantization, i.e., robustness against disorder of the conductance peaks on these phase boundaries. Another highlight of the work is on the emergence of two subregions in the weak topological insulator phase under disorder. According to the size dependence of the conductance, the surface states are either robust or "defeated" in the two subregions. The nature of the two distinct types of behavior is further revealed by studying the Lyapunov exponents.

cond-mat.mes-hall↗

arXiv2013

Criticality of the metal-topological insulator transition driven by disorder

Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-topological insulator (TI) transitions induced by disorder. The obtained exponent nu~2.7 shows no conspicuous deviation from the value established for metal-ordinary insulator transitions in systems of the symplectic class. We investigate the topological phase diagram upon carrier doping to reveal the nature of the so-called topological Anderson insulator (TAI) region. The critical exponent of the metal-TAI transition is also first estimated, shown to be undistinguishable from the above value within the numerical error. By symmetry considerations we determine the explicit form of Rashba spin-orbit coupling in systems of C4v point group symmetry.

cond-mat.mes-hall↗

arXiv2013

Perfectly conducting channel on the dark surface of weak topological insulators

A weak topological insulator (WTI) bears, generally, an even number of Dirac cones on its surface; they are susceptible of doubling, while on the surface of a certain orientation it shows no Dirac cone. On this "dark" surface of a WTI, we predict the existence of a single pair of isolated 1D perfectly conducting channels that forms either a closed loop or a segment of a line. The former is associated typically with a single atomic-layer-thick island formed on the dark surface, while the latter is shown to be the consequence of a pair of crystal (screw) dislocations terminating on the dark surface.

cond-mat.mes-hall↗

arXiv2013

Protection of the surface states in topological insulators: Berry phase perspective

The metallic surface state of a topological insulator (TI) is not only topologically protected, but exhibits a remarkable property of inducing an effective vector potential on curved surfaces. For an electron in the surface state of a spherical or a cylindrical TI (TI nanoparticle or nanowire) a pseudo-magnetic monopole or a fictitious solenoid is effectively induced, encoding the geometry of the system. Here, by taking an example of a hyperbolic surface we demonstrate that as a consequence of this property stemming from its active spin degree of freedom, the surface state is by itself topologically protected.

cond-mat.mes-hall↗

arXiv2012

Spherical topological insulator

The electronic spectrum on the spherical surface of a topological insulator reflects an active property of the helical surface state that stems from a constraint on its spin on a curved surface. The induced effective vector potential (spin connection) can be interpreted as an effective vector potential associated with a fictitious magnetic monopole induced at the center of the sphere. The strength of the induced magnetic monopole is found to be g=2pi, -2pi, being the smallest finite (absolute) value compatible with the Dirac quantization condition. We have established an explicit correspondence between the bulk Hamiltonian and the effective Dirac operator on the curved spherical surface. An explicit construction of the surface spinor wave functions implies a rich spin texture possibly realized on the surface of topological insulator nanoparticles. The electronic spectrum inferred by the obtained effective surface Dirac theory, confirmed also by the bulk tight-binding calculation, suggests a specific photo absorption/emission spectrum of such nanoparticles.

cond-mat.mes-hall↗

arXiv2012

Finite-size energy gap in weak and strong topological insulators

The non-trivialness of a topological insulator (TI) is characterized either by a bulk topological invariant or by the existence of a protected metallic surface state. Yet, in realistic samples of finite size this non-trivialness does not necessarily guarantee the gaplessness of the surface state. Depending on the geometry and on the topological indices, a finite-size energy gap of different nature can appear, and correspondingly, exhibits various scaling behaviors of the gap. The spin-to-surface locking provides one of such gap-opening mechanisms, resulting in a power-law scaling of the energy gap. Weak and strong TI's show different degrees of sensitivity to the geometry of the sample. As a noteworthy example, a strong TI nanowire of a rectangular prism shape is shown to be more gapped than that of a weak TI of precisely the same geometry.

cond-mat.mes-hall↗

arXiv2012

Quasiclassical Theory of the Josephson Effect in Ballistic Graphene Junctions

The stationary Josephson effect in a system of ballistic graphene is studied in the framework of quasiclassical Green's function theory. Reflecting the ultimate two-dimensionality of graphene, a Josephson junction involving a graphene sheet embodies what we call a planar Josephson junction, in which superconducting electrodes partially cover the two-dimensional graphene layer, achieving a planar contact with it. For capturing this feature we employ a model of tunneling Hamiltonian that also takes account of the effects of inhomogeneous carrier density. Within the effective mass approximation we derive a general formula for the Josephson current, revealing characteristic features of the superconducting proximity effect in the planar Josephson junction. The same type of analysis has been equally applied to mono-, bi- and arbitrary $N$-layer cases.

cond-mat.mes-hall↗

arXiv2012

Dirac Electrons on a Sharply Edged Surface of Topological Insulators

An unpaired gapless Dirac electron emergent at the surface of a strong topological insulator (STI) is protected by the bulk-surface correspondence and believed to be immune to backward scattering. It is less obvious, however, and yet to be verified explicitly whether such a gapless Dirac state is smoothly extended over the entire surface when the surface is composed of more than a single facet with different orientations in contact with one another at sharp corner edges (typically forming a steplike structure). In the realistic situation that we consider, the anisotropy of the sample leads to different group velocities in each of such facets. Here, we propose that much insight on this issue can be obtained by studying the electronic states on a hyperbolic surface of an STI. By explicitly constructing the surface effective Hamiltonian, we demonstrate that no backward scattering takes place at a concave $90^\circ$ step edge. A strong renormalization of the velocity in the close vicinity of the step edge is also suggested.

cond-mat.mes-hall↗

arXiv2012

Perfectly conducting channel and its robustness in disordered carbon nanostructures

We report our recent numerical study on the effects of dephasing on a perfectly conducting channel (PCC), its presence believed to be dominant in the transport characteristics of a zigzag graphene nanoribbons (GNR) and of a metallic carbon nanotubes (CNT). Our data confirms an earlier prediction that a PCC in GNR exhibits a peculiar robustness against dephasing, in contrast to that of the CNT. By studying the behavior of the conductance as a function of the system's length we show that dephasing destroys the PCC in CNT, whereas it stabilizes the PCC in GNR. Such opposing responses of the PCC against dephasing stem from a different nature of the PCC in these systems.

cond-mat.mes-hall↗

arXiv2011

Spin Berry phase in the Fermi arc states

Unusual electronic property of a Weyl semi-metallic nanowire is revealed. Its band dispersion exhibits multiple subbands of partially flat dispersion, originating from the Fermi arc states. Remarkably, the lowest energy flat subbands bear a finite size energy gap, implying that electrons in the Fermi arc surface states are susceptible of the spin Berry phase. This is shown to be a consequence of spin-to-surface locking in the surface electronic states. We verify this behavior and the existence of spin Berry phase in the low-energy effective theory of Fermi arc surface states on a cylindrical nanowire by deriving the latter from a bulk Weyl Hamiltonian. We point out that in any surface state exhibiting a spin Berry phase pi, a zero-energy bound state is formed along a magnetic flux tube of strength, hc/(2e). This effect is highlighted in a surfaceless bulk system pierced by a dislocation line, which shows a 1D chiral mode along the dislocation line.

cond-mat.mes-hall↗

arXiv2011

Spin Berry phase in anisotropic topological insulators

Three-dimensional topological insulators are characterized by the presence of protected gapless spin helical surface states. In realistic samples these surface states are extended from one surface to another, covering the entire sample. Generally, on a curved surface of a topological insulator an electron in a surface state acquires a spin Berry phase as an expression of the constraint that the effective surface spin must follow the tangential surface of real space geometry. Such a Berry phase adds up to pi when the electron encircles, e.g., once around a cylinder. Realistic topological insulators compounds are also often layered, i.e., are anisotropic. We demonstrate explicitly the existence of such a pi Berry phase in the presence and absence (due to crystal anisotropy) of cylindrical symmetry, that is, regardless of fulfilling the spin-to-surface locking condition. The robustness of the spin Berry phase pi against cylindrical symmetry breaking is confirmed numerically using a tight-binding model implementation of a topological insulator nanowire penetrated by a pi-flux tube.

cond-mat.mes-hall↗

arXiv2011

Majorana bound state of a Bogoliubov-de Gennes-Dirac Hamiltonian in arbitrary dimensions

We study a Majorana zero-energy state bound to a hedgehog-like point defect in a topological superconductor described by a Bogoliubov-de Gennes (BdG)-Dirac type effective Hamiltonian. We first give an explicit wave function of a Majorana state by solving the BdG equation directly, from which an analytical index can be obtained. Next, by calculating the corresponding topological index, we show a precise equivalence between both indices to confirm the index theorem. Finally, we apply this observation to reexamine the role of another topological invariant, i.e., the Chern number associated with the Berry curvature proposed in the study of protected zero modes along the lines of topological classification of insulators and superconductors. We show that the Chern number is equivalent to the topological index, implying that it indeed reflects the number of zero-energy states. Our theoretical model belongs to the BDI class from the viewpoint of symmetry, whereas the spatial dimension of the system is left arbitrary throughout the paper.

cond-mat.supr-con↗

arXiv2011

Weak topological insulator with protected gapless helical states

A workable model for describing dislocation lines introduced into a three-dimensional topological insulator is proposed. We show how fragile surface Dirac cones of a weak topological insulator evolve into protected gapless helical modes confined to the vicinity of dislocation line. It is demonstrated that surface Dirac cones of a topological insulator (either strong or weak) acquire a finite-size energy gap, when the surface is deformed into a cylinder penetrating the otherwise surface-less system. We show that when a dislocation with a non-trivial Burgers vector is introduced, the finite-size energy gap play the role of stabilizing the one-dimensional gapless states.

cond-mat.mes-hall↗

arXiv2011

Josephson Current through a Planar Junction of Graphene

Josephson effect in a planar graphene junction is studied by assuming that the coupling of a graphene sheet and two superconductors deposited on its top is described by a tunneling Hamiltonian. This model properly takes account of the proximity effect characteristic to a planar junction, and allows us to treat monolayer and bilayer cases in a parallel manner. Applying a quasiclassical Green's function approach to it we analyze the Josephson critical current $I_{\rm c}$ in a short-junction limit. As a characteristic feature of the planar junction we find that $I_{\rm c}$ is a concave function of temperature at the strong coupling limit while it crosses over to a convex function with decreasing the coupling strength. We also find different chemical-potential dependences of $I_{\rm c}$ in the monolayer and bilayer cases.

cond-mat.mes-hall↗

arXiv2011

Disorder-Induced Multiple Transition involving Z2 Topological Insulator

Effects of disorder on two-dimensional Z2 topological insulator are studied numerically by the transfer matrix method. Based on the scaling analysis, the phase diagram is derived for a model of HgTe quantum well as a function of disorder strength and magnitude of the energy gap. In the presence of sz non-conserving spin-orbit coupling, a finite metallic region is found that partitions the two topologically distinct insulating phases. As disorder increases, a narrow-gap topologically trivial insulator undergoes a series of transitions; first to metal, second to topological insulator, third to metal, and finally back to trivial insulator. We show that this multiple transition is a consequence of two disorder effects; renormalization of the band gap, and Anderson localization. The metallic region found in the scaling analysis corresponds roughly to the region of finite density of states at the Fermi level evaluated in the self-consistent Born approximation.

cond-mat.mes-hall↗