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Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 361 records · Page 20Linked to original sources

Spin-flop driven interfacial tunneling magnetoresistance in an antiferromagnetic tunnel junction

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be configured at various states under different magnetic fields, showing the possibility of efficient magnetic and electrical tunability. In this report, A-type antiferromagnetic (AFM) material (Fe0.5Co0.5)5GeTe2 (FCGT) works as electrodes to realize full van der Waals magnetic tunnel junctions. Owing to the interfacial effect, the even-layer FCGT, although with zero net magnetization, exhibits spin selectivity in MTJ architecture contributing to a tunneling magnetoresistance (TMR) reaching about 25% at a low operating current 1 nA at 100 K and persists near room temperature. Due to the surface spin-flop (SSF) effect in antiferromagnetic FCGT, the alternation flexibility between the volatile and nonvolatile memory behavior is achieved. The interfacial TMR can be tuned efficiently in amplitude and even sign under different bias currents and temperatures. These findings show precise magnetoelectric manipulation in MTJs based on 2D antiferromagnets and highlight the promise of 2D antiferromagnets for spintronic devices.

cond-mat.mes-hall↗

Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS4

Interfacial exchange coupling between antiferromagnets (AFMs) and ferromagnets (FMs) crucially makes it possible to shift the FM hysteresis, known as exchange bias, and to switch AFM states. Two-dimensional magnets unlock opportunities to combine AFM and FM materials; however, the buried AFM-FM interfaces obtained by stacking remains challenging to understand. Here we demonstrate interfacial control via intralayer exchange coupling in the layered AFM CrPS$_4$, where connected even and odd layers realize pristine lateral interfaces between AFM-like and FM-like regions. We distinguish antiphase even-layer states by scanning nitrogen-vacancy centre (NV) magnetometry due to a weak surface magnetization. This surface magnetization enables control over the even-layer state, with different regions switching at distinct fields due to their own lateral couplings. We toggle three AFM domains adjacent to a FM-like region and demonstrate a tunable multilevel exchange bias. Our nanoscale visualization unveils the microscopic origins of exchange bias and advances single two-dimensional crystals for hybrid AFM-FM technologies.

cond-mat.mes-hall↗

Precise Twist Angle Determination in twisted WSe2 via Optical Moiré Phonons

Twisted bilayers of transition metal dichalcogenides (TMDC) form moiré superlattices resulting in moiré minibands in momentum space and hosting localized excitons in real space. While moiré superlattices provide access to Mott-Hubbard physics, their energy potential landscape and electronic correlations are highly sensitive to fluctuations of the twist angle, disorder and lattice reconstructions. However, fast and non-invasive experimental access to local twist angle and its spatial variations is challenging. Here, we systematically correlate twist angle variations of twisted WSe2 bilayers across micrometer length scales using a combined lateral force microscopy (LFM) and a micro- Raman spectroscopy approach. These measurements uncover lateral variations in the twist angle by more than 1° across length scales relevant to optical and transport measurements. We demonstrate that twist angles in the range of 3° < $α$ < 12° show distinct Raman response from scattering on optical moiré phonons allowing twist angle determination with high precision and sub-micrometer spatial resolution under ambient conditions. These modes are particularly sensitive in the low-angle twist regime, predicted to host emergent quantum phases. Our results establish micro-Raman spectroscopy of optical moiré phonons as a rapid, non-invasive probe to determine twist angle and to screen local twist angle variations with a precision better than $\pm$ 0.3° and a lateral resolution below one micrometer. This methodology is also applicable to fully hBN-encapsulated heterostructures.

cond-mat.mtrl-sci↗

Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe$_2$ layers

We report an experimental study of the magnetic-field dependence of the optically pumped valley polarization in an epitaxial tungsten diselenide (WSe$_2$) monolayer grown by molecular-beam epitaxy (MBE) on a hexagonal boron nitride (hBN) substrate. Circularly polarized photoluminescence (PL) measurements reveal that applying a weak out-of-plane magnetic field, on the order of 0.1 T, dramatically increases the effectiveness of the optical orientation of the emission associated with defect-bound localized excitons. We compare the obtained results with the earlier studies on the reference exfoliated monolayers, discussing both qualitative similarity as well as quantitative differences. Our observations are further supplemented by the results of time-resolved PL measurements, which confirm the pseudospin relaxation time of approximately 25 ps, a value significantly shorter than the $\approx$100 ps previously reported for mechanically exfoliated samples.

cond-mat.mtrl-sci↗

Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors

Bistability-two distinct stable states under identical parameter-is not only a fundamental physical concept but also of importance in practical applications. While plasmon-polaritonic bistability representing history-dependent stable states within plasmonic systems has been theoretically predicted, it has yet to be demonstrated experimentally due to challenges in realizing suitable nonlinearity at feasible electric-field strengths. Here, we report the experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hexagonal-boron-nitride/graphene tunneling transistors, achieved through momentum-conserving resonant tunneling of Dirac electrons. Using a small twist angle between graphene layers, we engineered devices exhibiting both electronic and plasmon-polaritonic bistability. This bistable plasmonic behavior can be precisely tuned through load resistance and electrostatic gating. Our findings open new pathways for exploring nonlinear optical and electronic phenomena in van der Waals heterostructures and mark a significant advance in nanoplasmonics, with potential applications in optical memory, sensing, and optoelectronic switching.

cond-mat.mes-hall↗

Radio-frequency charge detection on graphene electron-hole double quantum dots

High-fidelity detection of charge transitions in quantum dots (QDs) is a key ingredient in solid state quantum computation. We demonstrate high-bandwidth radio-frequency charge detection in bilayer graphene quantum dots (QDs) using a capacitively coupled quantum point contact (QPC). The device design suppresses screening effects and enables sensitive QPC-based charge readout. The QPC is arranged to maximize the readout contrast between two neighboring, coupled electron and hole QDs. We apply the readout scheme to a single-particle electron-hole double QD and demonstrate time-resolved detection of charge states as well as magnetic field dependent tunneling rates. This promises a high-fidelity readout scheme for individual spin and valley states, which is important for the operation of spin, valley or spin-valley qubits in bilayer graphene.

cond-mat.mes-hall↗

Imaging propagating terahertz collective modes in two-dimensional semiconductor double layers

Two-dimensional transition metal dichalcogenide (TMD) semiconductors exhibit a wide range of novel phenomena at millielectronvolt (terahertz-frequency) energy scales, including superconducting and correlation-induced insulating gaps that are frequently accompanied by symmetry breaking. However, due to the subwavelength dimensions and the often low conductivities of these systems, their intrinsic THz plasmons and meV-scale excitation gaps are difficult to access experimentally. Here we report an optical readout method that can image propagating THz-frequency collective modes in real time. The method relies on a strong coupling between the optical polarons of monolayer TMD semiconductors and the local THz fields in a waveguide, which enables us to image THz plasmons with micron scale spatial resolution and determine their propagation group velocities. Moreover, at finite magnetic fields, we observe coherent cyclotron oscillations resulting from Landau level repopulation induced by the THz field. Our findings provide a new near-field platform for probing collective excitations in strongly correlated two-dimensional semiconductors and enable "all-photonic" TMD-based architectures for time-domain THz plasmonics and optoelectronics.

cond-mat.mes-hall↗

Resonant Dyakonov-Shur Magnetoplasmons in Graphene Terahertz Photodetectors

Graphene plasmons confine incident terahertz fields far below the diffraction limit and, when hosted by a gate-defined Fabry-Perot cavity, enable electrically tunable, frequency-selective photodetectors. In a magnetic field, these plasmons hybridize with the cyclotron motion to form magnetoplasmons, offering a platform for fundamental studies and for nonreciprocal, spectrally selective, ultrasensitive terahertz photonics. However, implementing magnetoplasmon-assisted resonant transistors at terahertz frequencies has remained challenging so far. Here we use gate-dependent, on-chip terahertz photocurrent spectroscopy combined with a perpendicular magnetic field to resolve and probe the evolution of resonant magnetoplasmons in antenna-coupled monolayer and bilayer graphene TeraFETs. In monolayer graphene the dispersion reflects the Dirac nature of the carriers, exhibiting a non-monotonic density dependence due to the interplay of plasma resonance and cyclotron motion, with an inflection point at maximal plasmon-cyclotron coupling. In contrast, in bilayer graphene we recover and map a magnetoplasmon dispersion consistent with the conventional Schrödinger-type picture. These results establish graphene TeraFET devices as a robust on-chip platform for resonant magnetoplasmonics at terahertz frequencies, enabling magnetically programmable, frequency-selective photonics and opening avenues toward photodetectors with enhanced sensitivity.

cond-mat.mes-hall↗

Evidence for electron localisation in a moiré-of-moiré superlattice

The localisation of electrons in a lattice potential is an quantum-mechanical phenomenon and is often associated with remarkable physical properties of solids involving electron spins, electric polarisations and topological effects. In particular, even a small amount of distortion of the lattice potential can localise otherwise-delocalised quantum states in low-dimensional electron systems, dramatically influencing their thermodynamic properties and charge-transport behaviour. Study of such electron localisation induced by an aperiodic lattice potential remains exceptionally challenging in solid-state systems, since extrinsic disorders can trivially trap electrons in potential minima near disorders, obscuring the underlying quantum-mechanical origin of localisation phenomena. Van der Waals heterostructures can provide an alternative route for explorations of the phenomena via the emergence of superlattice potentials generated by rotating and stacking individual layers. Here, we report strong signatures of electron localisation in helical trilayer graphene, where the interplay of two moiré patterns gives rise to a moiré-of-moiré superlattice with distinct regions of moiré-periodic and moiré-aperiodic potentials. Remarkably, our measurements reveal the presence of double moiré-induced bands and high-order Brown-Zak oscillations, which are direct reflections of the periodic region with two constituent moiré patterns, and a superimposed anomalous hysteretic signal attributable to the aperiodic region. The data strongly suggest that electron wave functions are partially localised driven by the loss of a periodic lattice potential. Our work provides insight into the effects of spatially inhomogeneous lattice potentials on the low-dimensional electronic states and introduces a promising approach to control electron localisation for practical applications in solid-state devices.

cond-mat.mes-hall↗

Tunable WS$_2$ Micro-Dome Open Cavity Single Photon Source

Versatile, tunable, and potentially scalable single-photon sources are a key asset in emergent photonic quantum technologies. In this work, a single-photon source based on WS$_2$ micro-domes, created via hydrogen ion irradiation, is realized and integrated into an open, tunable optical microcavity. Single-photon emission from the coupled emitter-cavity system is verified via the second-order correlation measurement, revealing a $g^{(2)}(τ=0)$ value of 0.3. A detailed analysis of the spectrally selective, cavity enhanced emission features shows the impact of a pronounced acoustic phonon emission sideband, which contributes specifically to the non-resonant emitter-cavity coupling in this system. The achieved level of cavity-emitter control highlights the potential of open-cavity systems to tailor the emission properties of atomically thin quantum emitters, advancing their suitability for real-world quantum technology applications.

quant-ph↗

Real-Space Imaging of Moiré-Confined Excitons in Twisted Bilayer MoS$_2$

Twisted two-dimensional semiconductors generate a moiré landscape that confines excitons (bound electron-hole pairs) into programmable lattices, offering routes to efficient light sources, sensing, and room-temperature information processing. However, direct real-space imaging of confined excitonic species within a moiré unit cell remains challenging; existing claims are inferred from spatially averaged far-field signals that are intrinsically insufficient to resolve nanometre-scale variations. Here, we imaged excitons across the moiré of a 2$^{\circ}$ twisted bilayer MoS$_2$ with nanometre resolution using room-temperature photocurrent atomic force microscopy. We directly resolved site-selective confinement: direct and indirect excitons localize at different stacking registries of the moiré, with contrast governed by alignment between site-selective generation and confinement minima. A Wannier-based moiré-exciton model reproduces the measured energies and the moiré-induced localization of the exciton wavefunction. These species-specific, unit-cell-resolved measurements constrain microscopic models of moiré excitons, provide benchmarks for excitonic order, and establish a device-compatible route to engineering excitonic lattices in van der Waals heterostructures.

cond-mat.mes-hall↗

Microwave spectroscopy of few-carrier states in bilayer graphene quantum dots

Bilayer graphene is a maturing material platform for gate-defined quantum dots that hosts long-lived spin and valley states. Implementing solid-state qubits in bilayer graphene requires a fundamental understanding of such confined electronic systems. In particular, states of two and three carriers, for which the exchange interaction between particles plays a crucial role, are a cornerstone for qubit readout and manipulation. Here we report on the spectroscopy of few-carrier states in bilayer graphene quantum dots, using circuit quantum electrodynamics (cQED) techniques that offer substantially improved energy resolution compared to standard transport techniques. Measurements using a superconducting high-impedance resonator capacitively coupled to the double quantum dot reveal dispersive features of two and three electron states, enabling the detection of Pauli spin and valley blockade and the characterization of the spin-orbit gap at zero magnetic field. The results deepen our understanding of few-carrier spin and valley states in bilayer graphene quantum dots and demonstrate that cQED techniques are a powerful state-selective probe for semiconductor nanostructures.

cond-mat.mes-hall↗

Electric field tunable coupling strength and quantum metric hot spots in a moiré flatband superconductor

Superconductivity in flatband systems has attracted tremendous attention in condensed matter physics. Alternating twisted multilayer graphene presents a compelling multiband system, with a coexistence of Dirac bands and flat bands, for exploring superconductivity. However, the roles of flat bands and dispersive bands played in determining the superconductivity remain elusive. Here, we focus on the alternating twisted quadralayer graphene to reveal unconventional superconducting behaviors by systematically quantifying individual contributions for both the dispersive bands and the flat bands. The superconductivity is robust, with a strong electrical field tunability, a maximum BKT transition temperature of 1.6 K, and high critical magnetic fields beyond the Pauli limit. By analyzing the Landau fan diagram at zero electric displacement fields, we disentangle Dirac bands and flat bands, revealing a Coulomb interaction-induced band broadening effect. We further quantify the electric-field-dependent evolution of the critical temperature and coherence length, and estimate the flat-band Fermi velocity and superfluid stiffness via critical current measurements. Our results demonstrate an electric field tunable coupling strength within the superconducting phase, revealing unconventional properties with vanishing Fermi velocity and large superfluid stiffness. These phenomena, attributed to substantial quantum metric contributions mediated by Dirac band hybridization, offer new insights into the mechanisms underlying unconventional flatband superconductivity in moiré systems.

cond-mat.supr-con↗

Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures

Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors.

cond-mat.mes-hall↗

Tunable Kondo effect in a bilayer graphene quantum channel

The interaction between itinerant electrons and localized spins is key to a wide range of electronic phenomena. Of particular interest is the regime where the interacting electrons exhibit both spin and valley degeneracy, resulting in SU(4) Kondo physics. However, this regime is challenging to realize in typical mesoscopic systems because it requires a strong interaction between electrons, resulting in a Kondo temperature ($T_\mathrm{K}$) significantly larger than the spin and valley splittings. Here, we present conductance measurements of a quantum point contact (QPC) in bilayer graphene (BLG). Beyond the expected quantized conductance plateaus, which reflect spin and valley degeneracy, we observe an additional subband, known as `0.7 anomaly' exhibiting signatures of Kondo physics and a $T_\mathrm{K}$ ranging from approximately 0.5 up to 2.4 K at zero magnetic field, corresponding to Kondo energies between 40 and 200 $μ$eV. Given that the spin-orbit splitting in BLG is between 40 and 80 $μ$eV, we argue that these results are consistent with a transition between four-fold degenerate SU(4) and two-fold degenerate spin-valley locked SU(2) Kondo effects. Furthermore, we break the valley degeneracy of the lowest subband by an out-of-plane magnetic field and show that Kondo signatures remain present, indicating a transition from SU(4) to a valley-polarized SU(2) Kondo effect, and showing the versatility of BLG QPCs for exploring many-body effects.

cond-mat.mes-hall↗

Flat band surface state superconductivity in thick rhombohedral graphene

Rhombohedral multilayer graphene has recently emerged as a rich platform for studying correlation driven magnetic, topological and superconducting states. While most experimental efforts have focused on devices with N$\leq 9$ layers, the electronic structure of thick rhombohedral graphene features flat-band surface states even in the infinite layer limit. Here, we use layer resolved capacitance measurements to directly detect these surface states for $N\approx 13$ layer rhombohedral graphene devices. Using electronic transport and local magnetometry, we find that the surface states host a variety of ferromagnetic phases, including both valley imbalanced quarter metals and broad regimes of density in which the system spontaneously spin polarizes. We observe several superconducting states localized to a single surface state. These superconductors appear on the unpolarized side of the density-tuned spin transitions, and show strong violations of the Pauli limit consistent with a dominant attractive interaction in the spin-triplet, valley-singlet pairing channel. In contrast to previous studies of rhombohedral multilayers, however, we find that superconductivity can persist to zero displacement field where the system is inversion symmetric. Energetic considerations suggest that superconductivity in this regime is described by the existence of two independent surface superconductors coupled via tunneling through the insulating single crystal graphite bulk.

cond-mat.supr-con↗

Building 3D superconductor-based Josephson junctions using a via transfer approach

The coupling of superconductivity to unconventional materials may lead to novel quantum states and potential applications. Controlling the quality of the superconductor-normal metal interface is of crucial importance to the understanding and engineering of the superconducting proximity effect. In many cases, conventional lithography-based deposition methods introduce undesirable effects. Using the concept of via contact and dry transfer, we have constructed smooth, van der Waals-like contact between 3D superconducting NbN/Pd and graphene with low contact resistance of approximately 130 $Ω\cdot μm$. Gate-tunable supercurrent, Fraunhofer pattern, and Andreev reflections are observed, the properties of which can be understood using an induced superconducting gap $Δ$' in this planar contact geometry. We discuss potential mechanisms impacting the magnitude of $Δ$' and suggest ways of further increasing the proximity coupling. This gentle, lithography-free contacting method can be applied to air- and damage-sensitive surfaces to engineer novel superconducting heterostructures.

cond-mat.mes-hall↗

Nature of 2D XY antiferromagnetism in a van der Waals monolayer

Two-dimensional antiferromagnetism has long attracted significant interest in many areas of condensed matter physics, but only recently has experimental exploration become feasible due to the isolation of van der Waals antiferromagnetic monolayers. Probing the magnetic phase diagram of these monolayers remains however challenging because established experimental techniques often lack the required sensitivity. Here, we investigate antiferromagnetism in atomically thin van der Waals magnet NiPS3 using magnetotransport measurements in field-effect transistor devices. Temperature-dependent conductance and magnetoresistance data reveal a distinct magnetic behavior in monolayers as compared to thicker samples. While bilayer and multilayer NiPS3 exhibit a single magnetic phase transition into a zig-zag antiferromagnetic state driven by uniaxial anisotropy, monolayer NiPS3 undergoes two magnetic transitions, with a low-temperature phase governed by in-plane hexagonal magnetic anisotropy. The experimentally constructed phase diagram for monolayer NiPS3 matches theoretical predictions from the six-state clock and 2D-XY models incorporating hexagonal anisotropy.

cond-mat.mes-hall↗