arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 523 records · Page 29Linked to original sources

arXiv2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.

cond-mat.mes-hall↗

arXiv2025

The role of non-equilibrium populations in dark exciton formation

In two-dimensional transition metal dichalcogenide structures, the optical excitation of a bright exciton may be followed by the formation of a plethora of lower energy dark states. In these formation and relaxation processes between different exciton species, non-equilibrium exciton and phonon populations play a dominant role, but remain so far largely unexplored as most states are inaccessible by regular spectroscopies. Here, on the example of homobilayer 2H-MoS$_2$, we realize direct access to the full exciton relaxation cascade from experiment and theory. By measuring the energy- and in-plane momentum-resolved photoemission spectral function, we reveal a distinct fingerprint for dark excitons in a non-equilibrium excitonic occupation distribution. In excellent agreement with microscopic many-particle calculations, we quantify the timescales for the formation of a non-equilibrium dark excitonic occupation and its subsequent thermalization to 85~fs and 150~fs, respectively. Our results provide a previously inaccessible view of the complete exciton relaxation cascade, which is of paramount importance for the future characterization of non-equilibrium excitonic phases and the efficient design of optoelectronic devices based on two-dimensional materials.

cond-mat.mes-hall↗

arXiv2025

Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor

Excitons, Coulomb bound electron-hole pairs, dominate the optical response of two-dimensional semiconductors across near-infrared and visible frequencies due to their large binding energy and prominent oscillator strength. Previous measurements of excitons in 2D semiconductors have primarily relied on far-field optical spectroscopy techniques which are diffraction limited to several hundred nanometers. To precisely image nanoscale spatial disorder requires an order of magnitude increase in resolution capabilities. Here, we present a study of the exciton spectra of monolayer MoSe2 in the visible range using a cryogenic scattering-type scanning near field optical microscope (s-SNOM) operating down to 11 K. By mapping the spatial variation in the exciton resonance across an hBN encapsulated MoSe2 monolayer, we achieve sub-50 nm spatial resolution and energy resolution below 1 meV. We further investigate the material's near-field spectra and dielectric function, demonstrating the ability of cryogenic visible s-SNOM to reveal nanoscale disorder. Comparison to room temperature measurements illustrate the enhanced capabilities of cryogenic s-SNOM to reveal fine-scale material heterogeneity.

cond-mat.mes-hall↗

arXiv2025

Transdimensional anomalous Hall effect in rhombohedral thin graphite

Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled with out-of-plane orbital magnetization associated in-plane chiral orbital motions. In three dimensional (3D) systems, carriers can tunnel or scatter along the third dimension within the vertical mean free path lz. When sample thickness far exceeds lz, scattering disrupts coherent out-of-plane motion, making 3D AHE effectively a thickness-averaged 2D counterpart[4] -- still governed by out-of-plane orbital magnetization arising from in-plane orbital motions. Here, we explore an uncharted regime where the sample thickness is much larger than the atomic layer thickness yet smaller than or comparable to lz. In such "transdimensional" regime, carriers can sustain coherent orbital motions both within and out of the 2D plane, leading to a fundamentally new type of AHE that couples both out-of-plane and in-plane orbital magnetizations. We report the first observation of such phenomenon -- transdimensional AHE (TDAHE) -- in electrostatically gated rhombohedral ennealayer graphene. This state emerges from a peculiar metallic phase that spontaneously breaks time-reversal, mirror and rotational symmetries driven by electron-electron interactions. Such TDAHE manifests as concurrent out-of-plane and in-plane Hall resistance hysteresis, controlled by external magnetic fields along either direction. Our findings unveils a new class of AHE, opening an unexplored paradigm for correlated and topological physics in transdimensional systems.

cond-mat.mes-hall↗

arXiv2025

Deterministic and Scalable Quantum Light Generation in DNA Origami-Programmed Organic Molecule-MoS$_2$ Monolayer Hybrids

The functionalization of atomically-thin transition metal dichalcogenides (TMDs) with organic molecules is a promising approach for realizing nanoscale optoelectronic devices with tailored functionalities, such as quantum light generation or p-n junctions. However, achieving precise control over the molecules' positioning on the 2D material remains a significant challenge. Here, we overcome the limitations of solution- and vapor-deposition methods and use a DNA origami placement technique to spatially arrange thiol molecules on a chip surface at the single-molecule level with high assembly yields. We successfully integrated MoS$_2$ monolayers with micron-scale thiol-origami patterns, achieving single-photon emission from thiol-induced localized excitons in MoS$_2$. Our work lays a foundation for the chemical control of quantum emitters in atomically-thin semiconductors and enables the design and production of ultracompact 2D devices for quantum technologies.

cond-mat.mes-hall↗

arXiv2025

Tunable atomically enhanced moiré Berry curvatures in twisted triple bilayer graphene

We report a twisted triple bilayer graphene platform consisting of three units of Bernal bilayer graphene consecutively twisted at 1.49° and 1.68°. We demonstrate the atomic reconstruction between the two competing moiré superlattices strongly enhances the Berry curvature of each moiré band insulator state, characterized by measured strong nonlocal valley Hall effect that sensitively depends on the inter-moiré competition strength, tunable by manipulating the out-of-plane carrier distribution. Our study sheds light on the microscopic mechanism of atomic and electronic reconstruction in twisted multilayer systems, by systematically investigating transport signatures of moiré Berry curvature and its enhancement from moiré-of-moiré lattice reconstruction. We show that the reconstructed electronic band can be versatilely tuned by electrostatics, providing an approach toward engineering the band structure and its topology for a quantum material platform with designer electrical and optical properties.

cond-mat.mes-hall↗

arXiv2025

Nonequilibrium Andreev resonances in ballistic graphene Andreev interferometers

We study nonequilibrium Andreev resonances in a voltage-biased graphene three-terminal Josephson junction (JJ). We observe periodic oscillations of resistance with maxima at multiples of the magnetic flux quantum (noninversion regime). As we increase the bias voltage, we further observe a transition point beyond which oscillations exhibit a $π$ phase shift (inversion regime) with maxima of resistance occuring at multiples of half-flux quantum. At this transition point, the frequency of the oscillations is doubled. We develop a model based on the coupling of the static Andreev bound states (ABSs) to the nonequilibrium Fermi surface of graphene to explain the observed noninversion to inversion crossovers. Our model associates these crossovers to microscopic phase-sensitive Andreev reflections which couple the normal and superfluid components of the current. Our findings show that multiterminal JJs can be used to engineer unconventional energy-phase relations such as those expected in the $π$-shifted ABSs without relying on quartet and Floquet physics. These nonequilibrium ABSs could potentially find applications in superconducting $π$ qubits.

cond-mat.mes-hall↗

arXiv2025

Observation of Half-Quantum Vorticity in an Iron-based Superconductor

Half-quantum vortices -- topological excitations carrying half the superconducting flux quantum -- are predicted to emerge in spin-triplet superconductors, where the spin component of order parameter enables fractional flux quantization. We present direct transport signatures of half-quantum vorticity in single-crystal Fe(Te,Se), an iron-based superconductor with helical Dirac surface states. Using mesoscopic superconducting ring devices, we observe half-integer quantum oscillations arising from the splitting of quantized fluxoid states, further supported by distinct signatures of trapped half-integer fluxoids. The quantum oscillations are modulated by a background symmetry, set by the relative orientation of the DC bias current and perpendicular magnetic field, consistent with strong spin-orbit coupling. These findings demonstrate the long-sought half-quantum vorticity in spin-polarized superconductors and open new directions toward non-Abelian excitations in quantum materials and scalable topological qubits.

cond-mat.supr-con↗

arXiv2025

Systematic investigation of the generation of luminescent emitters in hBN via irradiation engineering

Hexagonal boron nitride (hBN), a two-dimensional (2D) material, garners interest for hosting bright quantum emitters at room temperature. A great variety of fabrication processes have been proposed with various yields of quantum emitters. In this work, we study the influence of several parameters, such as irradiation energy, annealing environment, and the type of hBN, on the emitter density in hBN. Our results show (i) high emitter density with oxygen irradiation at 204 eV, (ii) post-annealing in carbon-rich atmospheres significantly increases emitter density, reinforcing carbon's potential role, (iii) no significant effect of oxygen pre-annealing, and (iv) a slightly increased emitter density from hBN crystals with lower structural quality. Although the precise origin of the emitters remains unclear, our study shows that oxygen irradiation and subsequent inert annealing in a carbon-rich environment play a crucial role in emitter generation, while the other processing parameters have a smaller influence. As such, our systematic study and findings show relevant advances towards the reproducible formation of visible-frequency quantum emitters in hBN.

cond-mat.mtrl-sci↗

arXiv2025

Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor

Controlling exciton relaxation and energy conversion pathways via their coupling to photonic modes is a central task in cavity-mediated quantum materials research. In this context, the light-matter hybridization in optical cavities can lead to intriguing effects, such as modified carrier transport, enhancement of optical quantum yield, and control of chemical reaction pathways. Here, we investigate the impact of the strong light-matter coupling regime on energy conversion, both in relaxation and upconversion schemes, by utilizing a strongly charged MoSe2 monolayer embedded in a spectrally tunable open-access cavity. We find that the charge carrier gas yields a significantly modified photoluminescence response of cavity exciton-polaritons, dominated by an intra-cavity like pump scheme. In addition, upconversion luminescence emerges from a population transfer from fermionic trions to bosonic exciton-polaritons. Due to the availability of multiple optical modes in the tunable open cavity, it seamlessly meets the cavity-enhanced double resonance condition required for an efficient upconversion. The latter can be actively tuned via the cavity length in-situ, displaying nonlinear scaling in intensity and fingerprints of the valley polarization. This suggests mechanisms that include both trion-trion Auger scattering and phonon absorption as its underlying microscopic origin.

cond-mat.mes-hall↗

arXiv2025

Direct measurement of terahertz conductivity in a gated monolayer semiconductor

Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.

cond-mat.mes-hall↗

arXiv2025

Spin texture and tunneling magnetoresistance in atomically thin CrSBr

The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, is of paramount significance for the development of two-dimensional spintronic nanodevices. In this letter, we present detailed magneto-transport and photoluminescence studies on few-layer CrSBr flakes utilizing a vertical tunneling device configuration. Our investigations revealed complex magnetic states along the evolutionary path of few-layer CrSBr. We observed intermediate states exhibiting identical net magnetization demonstrate rectification properties, reminiscent of a diode-like behavior at positive and negative bias voltages. Notably, in devices with 5-layer CrSBr, we detected an intriguing positive magnetoresistive state when subjected to an in-plane magnetic field along the b-axis. The implementation of the Mott two-current model successfully calculated the tunneling resistance of different magnetic states, thereby elucidating the spin configurations responsible for the observed transport phenomena. These insights not only provide new perspectives on the intricate spin textures of two-dimensional CrSBr but also highlight the efficacy of tunneling measurements as a sensitive method for probing magnetic order in van der Waals materials.

cond-mat.mes-hall↗

arXiv2025

Modification of the scattering mechanisms in bilayer graphene in proximity to a molecular thin film probed in the mesoscopic regime

Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms as well as on the trigonal warping of the electron dispersion near the K and K' valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for bilayer graphene. Here, we present weak localization measurements in a copper-phthalocyanine / bilayer graphene / h-BN heterostructure that suggest an important suppression of trigonal warping effects in bilayer graphene (BLG), restoring the manifestation of the chirality of the charge carriers in the localization properties of BLG. Additionally, we observe a charge transfer of 3.6$\times$10$^{12}$cm$^{-2}$ from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of copper phthalocyanine (CuPc). The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results.

cond-mat.mes-hall↗

arXiv2025

Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2

Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs can reversibly be switched between two stable phases with distinct permittivities by local heating, e.g., by optical laser pulses. While the well-known dielectric PCM GeSbTe-alloys feature only a permittivity change, the PCM In3SbTe2 can be switched between a dielectric and metallic phase. This makes In3SbTe2 promising for programming metallic launching structures. Here, we demonstrate direct optical programming and thereby rapid prototyping of optical launching structures in In3SbTe2 to tailor and confine polaritons in vdWM. We combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN's phonon polaritons through hBN into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the polariton confinement. Finally, we fabricate focusing structures for hBN's phonon polaritons whose focal point is changed in a second post-processing step. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWM.

physics.optics↗

arXiv2025

Anisotropic supercurrent suppression and revivals in a graphene-based Josephson junction under in-plane magnetic fields

We report on a tunable Josephson junction formed by a bilayer graphene ribbon encapsulated in WSe$_2$ with superconducting niobium contacts. We characterize the junction by measurements of the magnetic field induced interference pattern, and the AC Josephson effect manifested as "Shapiro steps", examining current dependent hysteresis and junction dynamics. The latter can be tuned by temperature, gate voltage, and magnetic field. Finally, we examine the evolution of the supercurrent when subjected to in-plane magnetic fields. Notably, we observe a strong anisotropy in the supercurrent with respect to the orientation of the in-plane magnetic field. When the field is parallel to the current direction, the supercurrent is suppressed, and shows revivals with increasing magnetic field, whereas it remains almost unaffected when the field is oriented in a perpendicular direction. We suggest that this anisotropy is caused by the dependence of supercurrent interference on the junction geometry.

cond-mat.mes-hall↗

arXiv2025

Nanoscale infrared and microwave imaging of stacking faults in multilayer graphene

Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking, where the direction of the interlayer shift alternates with each layer, and rhombohedral (or ``ABCABC...'') stacking order where the shifts are always in the same direction. However, for an N-layer system, there are in principle $N-1$ unique metastable stacking orders of this type. Recently, it has become clear that stacking order has a strong effect on the low energy electronic band structure with single-layer shifts completely altering the electronic properties. Most experimental work has focused on the extremal stacking orders in large part due to the difficulty of isolating and identifying intermediate orders. Motivated by this challenge, here we describe two atomic force microscopy (AFM) based techniques to unambiguously distinguish stacking orders and defects in graphite flakes. Photo-thermal infrared atomic force microscope (AFM-IR) is able to distinguish stacking orders across multiple IR wavelengths and readily provides absolute contrast via IR spectral analysis. Scanning microwave impedance microscopy (sMIM) can distinguish the relative contrast between Bernal, intermediate and rhombohedral domains. We show that both techniques are well suited to characterizing graphite van der Waals devices, providing high contrast determination of stacking order, subsurface imaging of graphene flakes buried under a hexagonal boron nitride (hBN) dielectric layer, and identifying nanoscale domain walls. Our results pave the way for the reliable fabrication of graphene multilayer devices of definite interlayer registry.

cond-mat.mes-hall↗

arXiv2025

Correlated insulating states in slow Dirac fermions on a honeycomb moir{é} superlattice

Strong Coulomb repulsion is predicted to open a many-body charge gap at the Dirac point of graphene, transforming the semimetal into a Mott insulator. However, this correlated insulating phase has remained inaccessible in pristine graphene, where a large Fermi velocity dominates the interaction effects. To overcome this limitation, we realize a honeycomb moir{é} superlattice in a twisted MoSe$_2$ homobilayer, where a graphene-like band structure forms with a Fermi velocity reduced by nearly two orders of magnitude. These slow moir{é} bands are folded from the valence band maximum at the $Γ$ valley of the extended Brillouin zone with negligible spin-orbital coupling, and can therefore simulate massless Dirac fermions in the strongly correlated regime with full SU(2) symmetry. By correlating Rydberg exciton sensing with moir{é} trions of different spatial characters, we detect a Mott gap at the Dirac point that persists up to 110 K. We further identify correlated insulating states at $ν=-1$ with a weak ferromagnetic coupling as well as at several fractional fillings. Our results highlight the potential of studying a wide range of quantum many-body phenomena in twisted two-dimensional materials.

cond-mat.mes-hall↗

arXiv2025

Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS2 through Coulomb Engineering

High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, largely impacting their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occurs within 2.5 nanoseconds, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, non-volatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking.

cond-mat.mes-hall↗