arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 685 records · Page 38Linked to original sources

arXiv2024

Decoherence of Quantum Emitters in hexagonal Boron Nitride

Coherent quantum emitters are a central resource for advanced quantum technologies. Hexagonal boron nitride (hBN) hosts a range of quantum emitters that can be engineered using techniques such as high-temperature annealing, optical doping, and irradiation with electrons or ions. Here, we demonstrate that such processes can degrade the coherence, and hence the functionality, of quantum emitters in hBN. Specifically, we show that hBN annealing and doping methods that are used routinely in hBN nanofabrication protocols give rise to decoherence of B-center quantum emitters. The decoherence is characterized in detail, and attributed to defects that act as charge traps which fluctuate electrostatically during SPE excitation and induce spectral diffusion. The decoherence is minimal when the emitters are engineered by electron beam irradiation of as-grown, pristine flakes of hBN, where B-center linewidths approach the lifetime limit needed for quantum applications involving interference and entanglement. Our work highlights the critical importance of crystal lattice quality to achieving coherent quantum emitters in hBN, despite the common perception that the hBN lattice and hBN SPEs are highly-stable and resilient against chemical and thermal degradation. It underscores the need for nanofabrication techniques that are minimally invasive and avoid crystal damage when engineering hBN SPEs and devices for quantum-coherent technologies.

quant-ph↗

arXiv2024

Signatures of sliding Wigner crystals in bilayer graphene at zero and finite magnetic fields

AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Unexpectedly, a phase with negative dR/dT has recently been observed when a large electric displacement field is applied and the charge carrier density is tuned to the vicinity of an ultra-low-density van Hove singularity. This phase exhibits features consistent with Wigner crystallization, including a characteristic temperature dependence and non-linear current bias behavior. However, more direct evidence for the emergence of an electron crystal in AB-stacked bilayer graphene at zero magnetic field remains elusive. Here we explore the low-frequency noise consistent with depinning and sliding of a Wigner crystal lattice. The current bias and frequency dependence of these noise spectra align well with findings from previous experimental and theoretical studies on the quantum electron solids. Our results offer transport signatures consistent with Wigner crystallization in AB-stacked bilayer graphene at zero and finite magnetic fields, paving the way for further substantiating an anomalous Hall crystal in its original form.

cond-mat.mes-hall↗

arXiv2024

Stabilizing the inverted phase of a WSe$_2$/BLG/WSe$_2$ heterostructure via hydrostatic pressure

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten-diselenide (WSe$_2$) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.

cond-mat.mes-hall↗

arXiv2024

Self-heating effects and switching dynamics in graphene multiterminal Josephson junctions

We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behaviour of this multiterminal Josephson junction (MTJJ) system. We show that existing simulation methods based on resistively and capacitively shunted Josephson junction networks can be significantly improved by taking into account these heating effects. We also investigate the phase dynamics in our MTJJ by measuring its switching current distribution and find correlated switching events in different junctions. We show that the switching dynamics is governed by phase diffusion at low temperatures. Furthermore, we find that self-heating introduces additional damping which results in overdamped I-V characteristics when normal and supercurrents coexist in the device.

cond-mat.mes-hall↗

arXiv2024

Non-Hermitian topology in the quantum Hall effect of graphene

Quantum Hall phases have recently emerged as a platform to investigate non-Hermitian topology in condensed-matter systems. This platform is particularly interesting due to its tunability, which allows to modify the properties and topology of the investigated non-Hermitian phases by tuning external parameters of the system such as the magnetic field. Here, we show the tunability of non-Hermitian topology chirality in a graphene heterostructure using a gate voltage. By changing the charge carrier density, we unveil some novel properties specific to different quantum Hall regimes. First, we find that the best quantization of the non-Hermitian topological invariant is interestingly obtained at very high filling factor rather than on well-quantized quantum Hall plateaus. This is of particular importance for the efficient operation of devices based on non-Hermitian topology. Moreover, we observe an additional non-Hermitian topological phase in the insulating nu=0 quantum Hall plateau, which survives at lower fields than the opening of the nu=0 gap, confirming a recent prediction of a disorder-induced trivial phase. Our results evidence graphene as a promising platform for the study of non-Hermitian physics and of emergent phases in such topological devices.

cond-mat.mes-hall↗

arXiv2024

Microsphere-assisted generation of localized optical emitters in 2D hexagonal boron nitride

Crystal defects in hexagonal boron nitride (hBN) are emerging as versatile nanoscale optical probes with a wide application profile, spanning the fields of nanophotonics, biosensing, bioimaging and quantum information processing. However, generating these crystal defects as reliable optical emitters remains challenging due to the need for deterministic defect placement and precise control of the emission area. Here, we demonstrate an approach that integrates microspheres (MS) with hBN optical probes to enhance both defect generation and optical signal readout. This technique harnesses MS to amplify light-matter interactions at the nanoscale through 2 two mechanisms: focused femtosecond (fs) laser irradiation into a photonic nanojet for highly localized defect generation, and enhanced light collection via the whispering gallery mode effect. Our MS-assisted defect generation method reduces the emission area by a factor of 5 and increases the fluorescence collection efficiency by approximately 10 times compared to MS-free samples. These advancements in defect generation precision and signal collection efficiency open new possibilities for optical emitter manipulation in hBN, with potential applications in quantum technologies and nanoscale sensing.

cond-mat.mes-hall↗

arXiv2024

Approaching the Intrinsic Properties of Moiré Structures Using Atomic Force Microscopy Ironing

Stacking monolayers of transition metal dichalcogenides (TMDs) has led to the discovery of a plethora of new exotic phenomena, resulting from moiré pattern formation. Due to the atomic thickness and high surface-to-volume ratio of heterostructures, the interfaces play a crucial role. Fluctuations in the interlayer distance affect interlayer coupling and moiré effects. Therefore, to access the intrinsic properties of the TMD stack, it is essential to obtain a clean and uniform interface between the layers. Here, we show that this is achieved by ironing with the tip of an atomic force microscope. This post-stacking procedure dramatically improves the homogeneity of the interfaces, which is reflected in the optical response of the interlayer exciton. We demonstrate that ironing improves the layer coupling, enhancing moiré effects and reducing disorder. This is crucial for the investigation of TMD heterostructure physics, which currently suffers from low reproducibility.

cond-mat.mes-hall↗

arXiv2024

Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene

Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within these materials lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spin depending on which valley they reside. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of tungsten diselenide to 1D via electrostatic confinement, we demonstrate that spin-valley locking in combination with strong hole-hole interactions lead to a ferromagnetic state in which hole transport through the 1D system is spin-valley polarized, even without an applied magnetic field, and that the persistence of this spin-valley polarized configuration can be tuned by a global back-gate. This observation opens the possibility of implementing a robust and stable valley polarized system, essential for valleytronic applications.

cond-mat.mes-hall↗

arXiv2024

Anomalously Enhanced Diffusivity of Moiré Excitons via Manipulating the Interplay with Correlated Electrons

Semiconducting transitional metal dichalcogenides (TMDCs) moiré superlattice provides an exciting platform for manipulating excitons. The in-situ control of moiré potential confined exciton would usher in unprecedented functions of excitonic devices but remains challenging. Meanwhile, as a dipolar composite boson, interlayer exciton in the type-II aligned TMDC moiré superlattice strongly interacts with fermionic charge carriers. Here, we demonstrate active manipulation of the exciton diffusivity by tuning their interplay with correlated carriers in moiré potentials. At fractional fillings where carriers are known to form generalized Wigner crystals, we observed suppressed diffusivity of exciton. In contrast, in Fermi liquid states where carriers dynamically populate all moiré traps, the repulsive carrier-exciton interaction can effectively reduce the moiré potential confinement seen by the exciton, leading to enhanced diffusivity with the increase of the carrier density. Notably, the exciton diffusivity is enhanced by orders of magnitude near the Mott insulator state, and the enhancement is much more pronounced for the 0-degree than the 60-degree aligned WS2/WSe2 heterobilayer due to the more localized nature of interlayer excitons. Our study inspires further engineering and controlling exotic excitonic states in TMDC moiré superlattices for fascinating quantum phenomena and novel excitonic devices.

cond-mat.mes-hall↗

arXiv2024

Extreme electron-hole drag and negative mobility in the Dirac plasma of graphene

Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of electron-hole drag in the Planckian plasma that develops in monolayer graphene in the vicinity of its Dirac point above liquid-nitrogen temperatures. The frequent electron-hole scattering forces minority carriers to move against the applied electric field due to the drag induced by majority carriers. This unidirectional transport of electrons and holes results in nominally negative mobility for the minority carriers. The electron-hole drag is found to be strongest near-room temperature, despite being notably affected by phonon scattering. Our findings provide better understanding of the transport properties of charge-neutral graphene, reveal limits on its hydrodynamic description and also offer insight into quantum-critical systems in general.

cond-mat.mes-hall↗

arXiv2024

High spatial resolution charge sensing of quantum Hall states

Charge distribution offers a unique fingerprint of important properties of electronic systems, including dielectric response, charge ordering and charge fractionalization. We develop a new architecture for charge sensing in two-dimensional electronic systems in a strong magnetic field. We probe local change of the chemical potential in a proximitized detector layer using scanning tunneling microscopy (STS), allowing us to infer the chemical potential and the charge profile in the sample. Our technique has both high energy (<0.3 meV) and spatial (<10 nm) resolution exceeding that of previous studies by an order of magnitude. We apply our technique to study the chemical potential of quantum Hall liquids in monolayer graphene under high magnetic fields and their responses to charge impurities. The chemical potential measurement provides a local probe of the thermodynamic gap of quantum Hall ferromagnets and fractional quantum Hall states. The screening charge profile reveals spatially oscillatory response of the quantum Hall liquids to charge impurities, and is consistent with the composite Fermi liquid picture close to the half-filling. Our technique also paves the way to map moiré potentials, probe Wigner crystals, and investigate fractional charges in quantum Hall and Chern insulators.

cond-mat.mes-hall↗

arXiv2024

Optical memory in a MoSe$_2$/Clinochlore device

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2024

Gate-tunable Bose-Fermi mixture in a strongly correlated moiré bilayer electron system

Quantum gases consisting of species with distinct quantum statistics, such as Bose-Fermi mixtures, can behave in a fundamentally different way than their unmixed constituents. This makes them an essential platform for studying emergent quantum many-body phenomena such as mediated interactions and unconventional pairing. Here, we realize an equilibrium Bose-Fermi mixture in a bilayer electron system implemented in a WS$_{2}$/WSe$_{2}$ moiré heterobilayer with strong Coulomb coupling to a nearby moiré-free WSe$_{2}$ monolayer. Absent the fermionic component, the underlying bosonic phase manifests as a dipolar excitonic insulator. By injecting excess charges into it, we show that the bosonic phase forms a stable mixture with added electrons but abruptly collapses upon hole doping. We develop a microscopic model to explain the unusual asymmetric stability with respect to electron and hole doping. By studying the Bose-Fermi mixture via monitoring excitonic resonances from both layers, we demonstrate gate-tunability over a wide range in the boson/fermion density phase space, in excellent agreement with theoretical calculations. Our results further the understanding of phases stabilized in moiré bilayer electron systems and demonstrate their potential for exploring the exotic properties of equilibrium Bose-Fermi mixtures.

cond-mat.str-el↗

arXiv2024

Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures

In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an energy gap, which is tunable by a perpendicular electric (displacement) field in a dual-gated structure. We observed significant nonlocal resistance, consistent with the scaling theory of the valley Hall effect. In the low-temperature limit, the nonlocal resistance approaches a saturated value near the "quantum limit," indicating the emergence of quantum valley currents.

cond-mat.mes-hall↗

arXiv2024

Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes

Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $κ= 0.41 \pm 0.02$ and localization length exponent $γ= 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $κ$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.

cond-mat.mes-hall↗

arXiv2024

Distinct moiré Exciton dynamics in WS2/ WSe2 heterostructure

This letter reports a time resolved pump-probe reflectance spectroscopic study on moiré excitons in a twisted monolayer WS2/WSe2 heterostructure. By probing at the resonant energies of intralayer excitons, we observed their distinct temporal tracks under the influence of interlayer excitons, which we attribute to the discrepancy in spatial distribution of the intralayer excitons in different layers. We also observed that intralayer moiré excitons in WSe2 layer differ at decay rate, which reflects different locations of Wannier-like and charge-transfer intralayer excitons in a moiré cell. We concluded that the interlayer moiré excitons form within a few picoseconds and have the lifetime exceeding five nanoseconds. Our results provide insights into the nature of moiré excitons and the strain's significant impact on their behaviour in twisted heterostructures, which could have important implications for the development of novel optoelectronic devices.

cond-mat.mes-hall↗

arXiv2024

Experimental detection of vortices in magic-angle graphene

The tunability of superconducting magic-angle twisted-layer graphene films elevates this material system to a promising candidate for superconducting electronics. We implement a gate-tuned Josephson junction in a magic-angle twisted four-layer graphene film. Field-dependent measurements of the critical current show a Fraunhofer-like pattern that differs from the standard pattern with characteristics typical for a weak transverse screener. We observe sudden shifts associated with vortices jumping into and out of the leads. By tuning the leads to the edge of the superconducting dome, we observe fast switching between superconducting and normal states, an effect associated with vortex dynamics. Time-dependent measurements provide us with the vortex energy scale and an estimate for the London penetration depth, in agreement with recent kinetic inductance measurements on twisted graphene films. Our results prove the utility of our junction as a sensor for vortex detection, allowing us to extract fundamental properties of the 2D superconductor.

cond-mat.mes-hall↗