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Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 145 records · Page 8Linked to original sources

Photon Correlation Spectroscopy as a Probe of Critical Fluctuations in Correlated Electron Systems

Characterizing phase transitions between correlated electronic phases, extracting their critical exponents, and identifying their universality class are of central interest in many-body physics. Here, we propose and demonstrate that photon correlation spectroscopy can be used to gain insight into the nature of critical electronic density fluctuations. We study a semiconductor moiré material consisting of two MoSe2 layers separated by a monolayer h-BN spacer and measure interlayer electron dynamics via the second-order correlation function of the scattered photons. The correlated transfer of large numbers of electrons between the layers at the onset of an Ising-type layer pseudo-spin phase transition leads to photon bunching in light scattered by the exciton resonance of one layer. Our measurements pave the way for using photon correlations as a method to access dynamical exponents associated with electronic phase transitions.

cond-mat.str-el↗

Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene

Realizing programmable topological states in quantum anomalous Hall (QAH) insulators requires the ability to design and dynamically tune their topological invariant, the Chern number C. Here, we report a designer QAH platform based on twisted rhombohedral graphene family, in which C becomes a programmable and electrically tunable degree of freedom. By engineering the layer configuration in twisted monolayer-rhombohedral N-layer graphene, denoted as (1+N)L, we realize QAH states with C=N at moire filling v=1, where the layer number N=3,4,5 directly sets the Chern number. Beyond such static layer programming, we demonstrate in-situ electrical control. In a twisted monolayer-trilayer device, the sign of C (chirality) can be switched by electrostatic doping or displacement field. Most strikingly, in twisted Bernal bilayer-rhombohedral tetralayer graphene denoted as (2+4)L, we drive a displacement-field-induced topological phase transition between two distinct QAH states with C=3 and C=4 in a single device. Our work establishes a layer-engineered and electrically tunable platform that transitions topological quantum matter from discovery to design, opening the way toward on-demand engineering of correlated topological states and reconfigurable topological electronics.

cond-mat.mes-hall↗

Link between thermodynamic correlation signatures and superconductivity in twisted trilayer graphene

Twisted graphene multilayers exhibit strong electronic correlations, which manifest in a range of experimental signatures. Yet how these signatures relate to each other and the microscopic ground states-and how twist angle and band structure reshape them-remains poorly understood. Here we study this interplay by correlating local thermodynamic and transport measurements in a twisted trilayer graphene (TTG) sample with unequal angles and flat electronic bands. We use a scanning single-electron transistor to map the impact of electron-electron interactions in a region of the sample where the local twist angle evolves smoothly. We observe gapped correlated insulators and a sawtooth in electronic compressibility, both exhibiting pronounced electron-hole (e-h) asymmetry with distinct magic angles for conduction and valence bands. Subsequent transport measurements in the same region reveal robust superconductivity with a similar e-h asymmetry. Our measurements indicate that superconductivity is not directly tied to the correlated insulators. Instead, its critical temperature correlates closely with the strength of the sawtooth in compressibility, suggesting a common origin or link between the two. By combining a local probe with transport measurements, we uncover connections between superconductivity and thermodynamic correlation signatures that are not apparent from either technique in isolation, highlighting the power of our dual approach and establishing their dependence on interlayer twist angles in TTG.

cond-mat.mes-hall↗

Magnons reveal topology and dynamics of a skyrmion crystal

Although individual skyrmions are topologically protected objects, their cooperative crystalline order is fragile, easily disrupted by thermal fluctuations or other external perturbations. Probing the internal dynamics of such a crystal is both compelling and challenging, as its intricate and delicate spin texture must remain stable during measurement. Here, we engineer a nanoscale graphene junction hosting a skyrmion Wigner crystal, embedded between magnon emitters and detectors. The skyrmion crystal geometry leaves a striking imprint on magnon transport: as the gate voltage is varied, near-periodic windows of sharp fluctuations in magnon count are detected across the entire sample. We develop an interpretation that this results from skyrmions being added one by one to a quasi-one-dimensional array. Each burst of the fluctuations thus corresponds to the entry of an additional skyrmion, during which the lattice stiffness reduces. The impinging magnons induce and act as a probe of non-equilibrium collective dynamics of the crystal. These results establish a real-space probe of topological spin textures in quantum Hall-type insulating ground states via magnon transport and open opportunities to explore correlated, topologically ordered phases in moire and multilayer graphene systems.

cond-mat.mes-hall↗

Competing Orders Driven by Wigner Crystal Phase in Rhombohedral Graphene

Rhombohedral graphene systems provide a unique platform where strong electronic interactions and nontrivial band topology coexist at low carrier densities and high displacement fields, giving rise to a rich landscape of emergent electronic phases. Here, we report that the highly insulating state on the low-density side of chiral superconductivity in rhombohedral pentalayer graphene (R5G) corresponds to a Wigner crystal (WC) phase. In addition, a hole-doped metallic Wigner crystal (h-mWC) phase emerges near the WC boundary. Under an out-of-plane magnetic field, the system hosts competing magnetic-field-stabilized superconductivity (fSC) and unconventional reentrant quantum Hall (RIQH) states. These emergent phases are closely connected to the underlying WC and mWC states and evolve continuously across phase boundaries. Our results establish that WC phase plays an important role in the phase diagram of rhombohedral multilayer graphene and highlight its connection to a rich landscape of emergent phases.

cond-mat.mes-hall↗

Even-denominator fractional quantum Hall states in the zeroth Landau level of ABA trilayer graphene

Even-denominator fractional quantum Hall states (FQHSs) at half filling are of particular interest because they can host non-Abelian quasiparticles. Here we report the emergence of such states in the zeroth Landau level ($N=0$) of ABA trilayer graphene (TLG), challenging the conventional expectation that they are confined to the first excited Landau level. We observe robust incompressible states at $ν=7/2$, $9/2$, and $5/2$ with their associated Levin--Halperin daughter states: $ν=59/17$ and $46/13$ near $7/2$; $ν=58/13$ and $77/17$ near $9/2$; and $ν=43/17$ near $5/2$. These states appear exclusively within a finite displacement-field window coincident with crossings between symmetry-broken $N=0$ Landau levels carrying distinct isospin indices. The quantitative correspondence between the calculated crossing loci and the experimentally determined stability regions identifies Landau-level mixing as the microscopic origin. We attribute the stabilization of these even-denominator states to inversion-symmetry breaking in TLG, which enhances valley-resolved Landau-level hybridization and renormalizes short-range Coulomb interactions. Our results expand the landscape of even-denominator FQHSs to multilayer graphene and establish TLG as a tunable platform for realizing non-Abelian anyons.

cond-mat.mes-hall↗

Interference-Enhanced Large Electron-Phonon Coupling from Raman-active Breathing Modes in Moiré Semiconductors

Superconductivity was recently observed in twisted WSe2 and MoTe2, raising a central question: is the pairing driven by electronic correlations, by phonons, or by both? Answering it requires determining the electron-phonon coupling (EPC) in these moiré semiconductors, whose calculation in realistic supercells of thousands of atoms lies beyond the reach of direct first-principles methods. Here we combine filling-dependent Raman spectroscopy with machine-learning first-principles calculations to obtain the EPC mode by mode in supercells of up to tens of thousands of atoms. Raman reveals only a few moiré phonons whose frequencies shift strongly with filling; we trace this to an interference selection rule: a phonon couples strongly only when its displacement texture matches the static lattice-reconstruction pattern, and is otherwise suppressed by destructive interference. The rule selects the low- and high-frequency breathing modes seen in Raman and makes the coupling peak at large twist angles, near those at which superconductivity appears. Lattice-reconstruction interference thus emerges as an organizing principle for moiré EPC, pointing to a substantial, potentially dominant, phonon contribution to large-angle pairing.

cond-mat.supr-con↗

Screening-controlled dynamical criticality in the quantum Hall regime

At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent $κ= 1/(zγ)$. Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent $z$ and the localization-length exponent $γ$ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length $l_B$ to the graphite-gate distance $d$, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives $κ\simeq 0.21$ in the screened regime and $κ\simeq 0.41$ in the unscreened regime; combining this with current scaling reveals that screening changes $z$ from $\simeq 1$ in the unscreened regime to $\simeq 2$ in the screened regime. In contrast, $γ$ remains close to $2.4$ throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent $γ$ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moiré materials, and other strongly localized electronic phases.

cond-mat.mes-hall↗

Vortex Dynamics in Magic-Angle Twisted Graphene

We use a gate-defined Josephson junction (JJ) device made from twisted-layer graphene for studying vortex dynamics in two dimensions. The JJ sensor signals the presence of individual vortices in the superconducting leads nearby the junction through shifts in the Fraunhofer interference pattern of the magnetic-field-dependent critical current $I_c(B)$ across the junction. Rapid vortex fluctuations manifest as telegraph-type noise in time traces of the junction voltage $V(t)$. Measurements of $I_c(B)$ and $V(t)$ are interpreted in terms of multi-vortex processes where fast vortex fluctuations in the leads are modulated by quasi-stationary vortices trapped in the leads. The different timescales associated with these processes allow for their disentangling and quantitative analysis. Tracking the temperature dependence of the vortex-dynamical rates between $T = 7$ mK and $T = 120$ mK, we find that the creep type vortex motion is thermally activated above $T \approx 100$ mK, while the saturation of rates below $T \approx 80$ mK is suggestive of a sharp transition to macroscopic quantum tunneling of vortices.

cond-mat.supr-con↗

Unveiling the Spin-Valley Structure of Dipolar Exciton Ladders in R-stacked WSe$_2$/WS$_2$ Moiré Heterobilayers

Localized interlayer excitons in moiré heterobilayers can form dipolar exciton ladders, yet their internal spin-valley structure remains unresolved. Here, we use helicity-resolved magneto-photoluminescence to identify the microscopic origin of the ladder in R-stacked WSe$_2$/WS$_2$ at charge neutrality and one-electron filling of the moiré lattice. At charge neutrality, the first two emission peaks correspond to a spin-triplet interlayer exciton and a triplet-triplet two-exciton state separated by 38 meV, reflecting the on-site dipolar interaction. The opposite Zeeman response of the apparent third rung of the ladder rules out its assignment as a spin-conserving three-exciton state and instead identifies it as a triplet-singlet two-exciton configuration with a 22 meV offset set by the WS$_2$ conduction-band spin splitting. At one-electron filling, the correlated electronic background gives rise to charged one- and two-exciton states and intervalley/intravalley two-exciton configurations, while reducing the effective exciton-exciton interaction. Our results establish a spin-valley-resolved picture of dipolar exciton ladders beyond simple occupation-number physics in moiré heterobilayers.

cond-mat.mes-hall↗

Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl

Interaction between different two dimensional materials can give rise to many exotic physical phenomena which are rarely observed in intrinsic materials. Recently, several theoretical and experimental works have revealed that magnetic proximity effect between pristine graphene and magnetic substrates can lead to the emergence of quantum anomalous Hall states and quantum spin Hall states. However, interplay between correlated states in graphene-based systems and magnetic materials has seldom been studied. Here we perform the transport measurement at ultrahigh magnetic field of twisted double bilayer graphene (TDBG) on CrOCl (COC) substrate, which is an antiferromagnetic material. Instead of a magnetic-exchange effect on graphene, we observe an enhanced correlated insulating state at half-filling factor of TDBG as a result of the charge-transfer process between TDBG and COC. The temperature and magnetic field dependence of this enhanced state are further studied. Our results demonstrate the influence of charge-related effect at the interface, and shed a light on a new route for manipulating the correlated states in graphene-based moiré systems using interfacial engineering.

cond-mat.mes-hall↗

Multi-Knob Switchable Chiral Superconductivity Quartet in Rhombohedral Graphene

Chiral superconductors break orbital time-reversal symmetry and may host topological quasiparticles with non-Abelian statistics. In rhombohedral graphene, superconductivity develops from a spin-valley-polarized quarter-metal (QM) parent state and features unique magnetic hysteresis of resistance that indicates orbital time-reversal-symmetry-breaking. Exploring and controlling the full spin-valley flavors of such superconductivity could enable novel superconducting and topological devices, but have remained unexplored. Here we report transport measurements on rhombohedral hexalayer graphene (R6G), which reveal a new superconducting state (SCH) that is induced by an out-of-plane magnetic field, in addition to chiral superconductivity (CSC) similar to those observed in thinner layers. This SCH state emerges above 0.8 T, persists up to 1.6 T and can be switched on/off by magnetic field $H_\perp$, carrier density $n$, and gate displacement field $D$. Quantum oscillations and anomalous Hall measurements show that SCH stems from a field-induced quarter-metal (QM$'$) parent phase, which carries orbital magnetization opposite to that of the zero-field QM. Across the full $(n, D, H_\perp)$ parameter space, superconductivity can be realized from all four spin-valley isospin flavors, establishing a switchable chiral-superconductor quartet in R6G. We interpret the parent-state switching as arising from competition between a Kane-Mele-like spin-valley splitting and magnetic-field coupling to spin-valley-dependent magnetic moments. Our work establishes rhombohedral graphene as a multi-knob platform for different isospin-polarized superconductivities, which enables programmable superconducting networks with possible Majorana modes along domain walls.

cond-mat.supr-con↗

Half state at $ν_{tot}$ = -1/2 and its transition in Decoupled Twisted Double Bilayer Graphene

The origin of the fractional state at $ν$ = 1/2 observed in double-layer quantum Hall systems has been under debate for decades. Because of the variation of bilayer charge distribution and interlayer tunneling strength, the half-filling state can be attributed to a two-component(2C) or a one-component(1C) origin, which corresponds to Halperin state and Pffafian state, respectively. Here we report the magnetotransport measurement in decoupled twisted double bilayer graphene(TDBG), which has been proved to be a promising platform for double quantum Hall system. Fractional quantum hall states in both odd and even denominator fillings are observed. We also found that the half-filling state occurs at zero displacement field at $ν_{tot}$ = -1/2, which is theoretically consistent with two-component Halperin-Laughlin (Ψ331) state. Moreover, we report the transition from two-component state at zero D field to one-component non-Abelian state by tunning displacement field. Our observation of the half filling state and its transition from 2C to 1C state provides the tunability of decoupled twisted double bilayer graphene and shed light on the understanding of the ground states at half-filling factor in the double quantum Hall system.

cond-mat.mes-hall↗

Cryogenic shock exfoliation for ultrahigh mobility rhombohedral graphite nanoelectronics

Rhombohedral multilayer graphene (RMG) offers a highly tunable platform for correlated electron physics, featuring field-effect control of magnetic, superconducting, and topological phases[1-24]. The promise of these materials has been held back by the limited abundance of rhombohedral stacking in natural graphite, which constrains both sample yield and useful area. Here we introduce 'cryogenic shock exfoliation' to produce large area rhombohedral graphene flakes which, combined with a low-pressure van der Waals assembly technique that preserves stacking order, enable highly uniform devices exceeding 1300 $μm^2$ with fabrication yields of 90%. Using scanning nanoSQUID-on-tip imaging, we demonstrate uniform spin magnetism over the full central 10 times 10 $μm^2$ area of our devices. Transverse magnetic focusing reveals a disorder mean free path exceeding 200 $μm$ at low temperatures. Within the flat surface bands of RMG[20], we observe a size-driven crossover from Poiseuille to porous electron flow in the intermediate-temperature regime of strong electron-electron hydrodynamics[16, 25], providing a further signature of ultrahigh device quality. Our approach overcomes a key materials bottleneck in the fabrication of mesoscopic rhombohedral graphene devices, paving the way for incorporating strongly correlated phases into two-dimensional nanoelectronics.

cond-mat.mes-hall↗

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2

Photodoping plays an important role in determining the optoelectronic response of two-dimensional semiconductor devices; however, the origin of the responsible trap states remains unclear. In this work, we investigate UV-induced photodoping in multilayer WSe2 field-effect transistors (FETs) based on WSe2/hBN heterostructures on SiO2/p-Si substrates. Wavelength-dependent measurements reveal pronounced n-type photodoping under 405 nm illumination, whereas the effect is orders of magnitude weaker under 640 nm excitation and for p-type photodoping. Furthermore, when the SiO2 layer is removed, both n-type and p-type photodoping are strongly suppressed, demonstrating that the oxide layer is essential for persistent photodoping. Analysis of defect-state distributions in amorphous SiO2, together with first-principles calculations for hBN defects, shows that the experimental observations cannot be explained by defects in hBN. Instead, the results indicate that defect states in the SiO2 substrate act as charge reservoirs that facilitate charge transfer and long-term carrier trapping. These findings highlight the dominant role of substrate-related trap states in UV-induced photodoping and photogating behavior in WSe2 FET devices.

cond-mat.mes-hall↗

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

We investigate how many-electron excited states emerge in twisted MoSe2 homobilayers when the lattice reconstructions evolve. Notably, we identify a new trion resonance that arises in the transition regime of lattice reconstruction, where gradual changes in atomic alignment between the layers occur. Magnetic field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Gamma valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moiré supercell. We propose that the new trion resonance is a "charge-transfer" trion, in which the electron-hole pair is spatially separated from the doped hole. The emergence of these complex excited states stems from the distinct moiré potentials acting on holes and excitons, resulting in their different spatial distribution within the superlattice.

cond-mat.mes-hall↗

Twist-configured moire-moire reconstruction governs diverse commensurate double-moire phases in twisted bilayer graphene on h-BN

The coexistence of multiple moire lattices in van der Waals heterostructures raises a fundamental question: how do distinct moire patterns interact and reconstruct? Here, we investigate twisted bilayer graphene (tBG) on hexagonal boron nitride (h-BN), where tBG and graphene/h-BN moire structures coexist, using conductive atomic force microscopy combined with continuum-model simulations. We show that reconstruction between these moire lattices-moire-moire reconstruction-manifests across multiple length scales, giving rise to diverse commensurate double-moire phases. Locally, the stacking registry between the two moire lattices is uniquely selected by the global twist configuration (helical or alternate), mediated by rotational relaxation of the shared graphene layer. This registry, together with twist angle and strain, governs commensurate domains from C3z-symmetric to strained symmetry-modified structures. These results establish moire-moire reconstruction as a general framework for engineering structural and electronic order -- including theoretically predicted topological flat bands below the magic angle -- in multilayer moire materials.

cond-mat.mtrl-sci↗

Bandwidth-Limited Critical Currents in Electrically Tunable Moiré Bands

Moiré superlattices host narrow minibands whose bandwidth governs correlated and topological phases. Here, we demonstrate that the bandwidth also sets the critical current for the onset of out-of-equilibrium transport. In bilayer graphene aligned to hexagonal boron nitride, we explore the high-current transport regime as we continuously flatten the valence miniband using an out-of-plane displacement field. We observe a significant reduction in the critical current, which is captured by a minimal analytical model and corresponds to the calculated narrowing of the miniband. Moreover, by comparing distinct moiré platforms, we show that the scaling between critical current and bandwidth is a universal feature of graphene superlattices. Our results reveal a direct link between miniband dispersion and high-current transport, and establish this regime as a fast and accessible electrical probe of bandwidth evolution.

cond-mat.mes-hall↗