arXiv subjects

Kenji Yasuda

Publications and source records attributed to Kenji Yasuda.

10 recordsLinked to original sources

arXiv2026

Signatures of nodal superconductivity in stoichiometric FeTe

Superconductivity in stoichiometric FeTe opens access to the FeTe endpoint of the Fe(Se,Te) phase diagram, yet the nature of its superconducting pairing state remains unresolved. In this work, we combine scanning superconducting quantum interference device (SQUID) microscopy, electrical transport, scanning tunneling microscopy and spectroscopy (STM/S), and mean-field calculations to investigate the local superfluid response and pairing state of FeTe thin films with tunable stoichiometry. Even in stoichiometric FeTe, we observe micrometer-scale spatial variations in both superfluid stiffness and superconducting transition temperature $T_c$, while the London penetration depth remains non-saturating down to 0.02$T_c$ and follows a power-law temperature dependence with an exponent of approximately 1-1.5. Together with a V-shaped low-energy density of states and two-gap modeling, these results indicate a superconducting state with gap nodes or deep minima, consistent with either a $d$-wave or nodal $s$-wave superconducting state. Our findings establish stoichiometric FeTe as a distinct superconducting regime that departs from the trend toward more isotropic gaps at intermediate Se/Te compositions, providing a new benchmark for modern microscopic theories of iron-chalcogenide superconductivity. Our work also reveals a crossover from weak to rapid suppression of $T_c$ as superfluid stiffness decreases, connecting FeTe to the broader phenomenology observed in unconventional superconductors.

cond-mat.supr-con↗

arXiv2026

Competing Chern states revealed by quasiparticle charging in moir\'e rhombohedral graphene

Moir\'e materials realize a versatile platform for exploring the physics of fractional Chern insulators (FCIs). The recently observed evolution from FCIs to an extended quantum anomalous Hall background upon lowering the electronic temperature in moir\'e rhombohedral graphene (mRG)8 raises a fundamental question: Is it caused by a failure to equilibrate the edge states of an FCI or by a genuine phase transition in the bulk from an FCI to a generalized anomalous Hall crystal? Here we address this question by probing quasiparticle charging in a mesoscopic mRG antidot device and by bulk resistance measurements, both of which are bulk-sensitive and free from complications from edge states. Tunneling to the mRG antidot reveals quasiparticles carrying one electron charge for both Chern states at filling factors {\nu}=1 and 2/3 at low temperatures. Temperature dependence measurements of the bulk resistance near {\nu}=2/3 further suggest a thermodynamic phase transition from an FCI to a generalized anomalous Hall crystal at temperatures below about 150mK. The results clearly exclude the edge state equilibration scenario and favor the phase transition scenario. Our work establishes mesoscopic probes as a powerful approach to uncover competing ground states in moir\'e materials and provides a basis for probing fractionalized excitations in FCIs.

cond-mat.mes-hall↗

arXiv2025

Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene

Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases, which are absent in conventional Bernal stacking. Here, we demonstrate a sliding-induced first-order structural phase transition between Bernal and rhombohedral tetralayer graphene driven by gate voltages. Through transport measurement, we observe bistable switching between a Bernal-dominant state and a rhombohedral-Bernal mixed state across a wide space of the gate-voltage phase diagram. The structural phase transition results in nonvolatile switching between a paramagnet and a ferromagnet accompanied by the anomalous Hall effect. The sign reversal of the anomalous Hall effect under opposite displacement fields suggests that it may originate from domain boundaries between the Bernal and rhombohedral regions. Our discovery paves the way for on-demand toggling of quantum phases based on the sliding phase transition of 2D materials and offers a playground to explore unconventional physics at the stacking domain boundaries.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage.

cond-mat.mes-hall↗

arXiv2024

Band structure engineering using a moir\'e polar substrate

Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moir\'e substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moir\'e potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60{\deg}-twisted bilayer BN provides a unique platform for studying the moir\'e structural effect without the contribution from electrostatic moir\'e potentials. Tunable moir\'e polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2022

Nonreciprocal electrical transport in multiferroic semiconductor (Ge,Mn)Te

We have investigated the nonreciprocal electrical transport, that is a nonlinear resistance effect depending on the current direction, in multiferroic Rashba semiconductor (Ge,Mn)Te. Due to coexistence of ferromagnetic and ferroelectric orders, (Ge,Mn)Te provides a unique platform for exploring the nonreciprocal electrical transport in a bulk form. (Ge,Mn)Te thin films shows a large nonreciprocal resistance compared to GeTe, the nonmagnetic counterpart with the same crystal structure. The magnetic-field-angle dependence of the nonreciprocal resistance is maximized when magnetic field is orthogonal to both current and electric polarization, in accord with the symmetry argument. From the analysis of temperature and magnetic field dependence, we deduce that inelastic scatterings of electrons mediated by magnons dominantly contribute to the observed nonreciprocal response. Furthermore, the nonreciprocal resistance is significantly enhanced by lowering hole density. The Fermi level dependence is attributed to the deformation of the Rashba band in which the spin-momentum locked single Fermi surface appears by exchange field from the in-plane magnetization. The present study provides a key insight to the mechanisms of novel transport phenomena caused by the interplay of ferroelectric and ferromagnetic orders in a semiconductor.

cond-mat.mtrl-sci↗

arXiv2021

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2, and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly-parallel stacked bilayers enables the visualization of moir\'e ferroelectric domains as well as electric-field-induced domain wall motion with piezoelectric force microscopy (PFM). Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The novel semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties.

cond-mat.mes-hall↗

arXiv2020

Stacking-engineered ferroelectricity in bilayer boron nitride

2D ferroelectrics with robust polarization down to atomic thicknesses provide novel building blocks for functional heterostructures. Experimental reports, however, remain scarce because of the requirement of a layered polar crystal. Here, we demonstrate a rational design approach to engineering 2D ferroelectrics from a non-ferroelectric parent compound via employing van der Waals assembly. Parallel-stacked bilayer boron nitride is shown to exhibit out-of-plane electric polarization that reverses depending on the stacking order. The polarization switching is probed via the resistance of an adjacently-stacked graphene sheet. Furthermore, twisting the boron nitride sheets by a small-angle changes the dynamics of switching due to the formation of moir\'e ferroelectricity with staggered polarization. The ferroelectricity persists to room temperature while keeping the high mobility of graphene, paving the way for potential ultrathin nonvolatile memory applications.

cond-mat.mes-hall↗

arXiv2020

Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials

Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries.

cond-mat.mtrl-sci↗

arXiv2016

Brillouin-Wigner theory for high-frequency expansion in periodically driven systems: Application to Floquet topological insulators

We construct a systematic high-frequency expansion for periodically driven quantum systems based on the Brillouin-Wigner (BW) perturbation theory, which generates an effective Hamiltonian on the projected zero-photon subspace in the Floquet theory, reproducing the quasienergies and eigenstates of the original Floquet Hamiltonian up to desired order in $1/ω$, with $ω$ being the frequency of the drive. The advantage of the BW method is that it is not only efficient in deriving higher-order terms, but even enables us to write down the whole infinite series expansion, as compared to the van Vleck degenerate perturbation theory. The expansion is also free from a spurious dependence on the driving phase, which has been an obstacle in the Floquet-Magnus expansion. We apply the BW expansion to various models of noninteracting electrons driven by circularly polarized light. As the amplitude of the light is increased, the system undergoes a series of Floquet topological-to-topological phase transitions, whose phase boundary in the high-frequency regime is well explained by the BW expansion. As the frequency is lowered, the high-frequency expansion breaks down at some point due to band touching with nonzero-photon sectors, where we find numerically even more intricate and richer Floquet topological phases spring out. We have then analyzed, with the Floquet dynamical mean-field theory, the effects of electron-electron interaction and energy dissipation. We have specifically revealed that phase transitions from Floquet-topological to Mott insulators emerge, where the phase boundaries can again be captured with the high-frequency expansion.

cond-mat.mes-hall↗