arXiv subjects

Kenneth Crozier

Publications and source records attributed to Kenneth Crozier.

3 recordsLinked to original sources

arXiv2026

Self-powered InAs nanowire detector arrays for extended-SWIR spectrometry at room temperature

Spectral sensing in the extended shortwave infrared (e-SWIR) is important for molecular analysis, infrared imaging, and machine vision, motivating the development of compact spectrometers for broader applications. However, conventional commercial off-the-shelf spectrometers in this wavelength region are expensive and bulky due to their reliance on external dispersive optics/filters and/or cryogenic accessories. Other emerging computational spectrometers are based on Si and InGaAs photodetectors that remain focused on the visible and near-infrared, with few detector platforms operating in the e-SWIR regime that simultaneously provide broadband sensitivity, low-noise room-temperature operation, and diverse spectral signatures for accurate identification and reconstruction. Here, we report a room-temperature e-SWIR computational spectrometer based on InAs/InP core-shell nanowire photodetector arrays with geometry-encoded spectral responses. The detectors exhibit self-powered broadband photoresponse across the 1--3 $\mu$m range, with responsivity up to 0.215 A W$^{-1}$, detectivity up to $1.6 \times 10^{9}$ cm Hz$^{1/2}$ W$^{-1}$, and microsecond response times. The excellent detector performance is leveraged to demonstrate filter-free spectral reconstruction using a compact multipixel photodetector array device. This enables high-accuracy molecular absorption spectrum reconstruction and hyperspectral imaging. Our results indicate that InAs nanowire arrays are a promising platform for compact computational spectrometry and imaging in the e-SWIR at room temperature.

physics.optics↗

arXiv2026

Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm

Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit offers a promising "silicon-native" alternative, yet achieving practical short-wave infrared applications at room temperature remains a formidable challenge. Here, we demonstrate a high-detectivity hyperdoped silicon photodetector enabling room-temperature computational short-wave infrared imaging beyond Si bandgap wavelength at {\lambda} = 1550 nm. By integrating an ultrafast laser heating process step to reduce the dark current while keeping high responsivity, we achieve a specific detectivity D^* exceeding 10^9 Jones for 1550 nm at room temperature working in a forward-biased, photoconductive mode. The improved detectivity, coupled with a 59.4 dB linear dynamic range and kHz-scale bandwidth, allows us to demonstrate a single-pixel imaging system that reconstructs 1550 nm scenes at 65x63 pixels without cryogenic cooling. Our devices simultaneously support visible-light imaging, offering a path toward monolithically integrated, multispectral Si-native optical sensors. These results establish ultrafast-laser hyperdoped silicon as a viable platform for low-cost, room-temperature, short-wave infrared photonics, bridging the gap between advanced materials science and practical computational imaging system.

physics.optics↗

arXiv2023

The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS$_2$ for Broadband Photodetection

Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broadband wavelength excitation - especially beyond the material's nominal band gap - while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling - which we term the acoustophotoelectric effect - in SnS$_2$ that facilitates efficient photodetection through the application of 100-MHz-order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS$_2$, but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broadband photodetection beyond the visible light range, whilst maintaining pA-order dark currents - remarkably without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to eight orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS$_2$-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.

physics.app-ph↗