arXiv subjects

Kenneth W. West

Publications and source records attributed to Kenneth W. West.

17 recordsLinked to original sources

arXiv2026

Cascade of fractional quantum Hall states in 2D system

The observation of the fractional quantum Hall (FQH) effect in 2D electron gases ushered in investigations of topological phases driven by strong electron correlations. Their remarkable features include fractionalized elementary excitations, gapless boundary states, and non-trivial quantum entanglement patterns. Thanks to persistent efforts in the building of new platforms and making higher-quality samples, a diverse plethora of FQH states have been unveiled in experiments. We report a systematic study of ultrahigh-quality GaAs/AlGaAs quantum wells with mobility up to 3.7*10^7 cm^2/V/s using quantum transport measurements in nuclear adiabatic demagnetization and dilution refrigerators down to 1 mK. In addition to many FQH states that have already been identified in previous work, new longitudinal resistance dips are observed at filling factors 17/33 and 15/31. The application of an in-plane magnetic field causes disparate variations of the FQH states. The theoretical foundation of these states is discussed in the framework of composite fermion theory. While most fractions can be explained as non-interacting composite fermions forming integer quantum Hall states, a few states correspond to FQH states of composite fermions that arise from residual interaction between them. We summarize the observed fractions in the range of 0 < ν < 2 and propose a pattern to account for their experimental appearance that provides an intuitive picture about the relative strengths of different FQH states.

cond-mat.mes-hall↗

arXiv2025

Topological Protection in a Landau Flat Band at $ν=7/11$, a Candidate Filling Factor for Unconventional Correlations

Strong interactions in Landau flat bands are known to stabilize correlated states that do not form in other types of flat bands. We report hallmarks of topological protection at the Landau level filling factor v=7/11 in a two-dimensional electron system. The $ν=7/11$ filling factor is the particle-hole conjugate of $ν=4/11$, a filling factor intensely studied for the possibility of realizing unconventional electronic correlations. Our data establishes a new instance for an unusual fractional quantum Hall state and opens up possibilities for the study of unconventional correlations in an enlarged parameter space. We report and discuss transport signatures developing at other filling factors of interest $ν= 11/17$, $5/8$, and $8/13$, which however in our sample do not exhibit topological protection.

cond-mat.mes-hall↗

arXiv2025

Nonlinear transport of Wigner solid phase surrounding the two-flux composite fermion liquid

We have investigated the low temperature (T) transport properties of fractional quantum Hall (FQH) states in a high-mobility two-dimensional hole gas. According to the composite fermion (CF) model, FQH states stemming from a half-filled Landau level, specifically at filling factors $ν=p/(2p+1) (p=\pm 1,\pm 2,\pm 3,...)$, can be associated with two-flux-attached CFs at the corresponding Lambda filling factor p. The zero-resistance minima and Hall plateaus of these states exhibit unusual temperature dependencies, characterized by rapid increases in width below a threshold temperature around 100 mK. Differential conductivity measurements from Corbino samples reveal that the regimes surrounding the CF liquid display clear nonlinear transport characteristics. This nonlinearity implies that each CF liquid is surrounded by CF solid phase composed of dilute CF excitations. Quantitatively, the applied electric field E influences the motion of CF solid in a way analogous to T, which is dubbed the "E-T duality". Our analysis indicates that this E-T duality is consistent with the Berezinskii-Kosterlitz-Thouless theory in two-dimensional phase transitions.

cond-mat.mes-hall↗

arXiv2023

Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers

We present a reliable flip-chip technique for dual-side processing of thin (<1 micron) high-mobility GaAs/AlGaAs epitaxial layers. The technique allows the fabrication of small (micron-scale with standard UV photolithography) patterned back gates and dual-gate structures on the thin GaAs/AlGaAs films with good alignment accuracy using only frontside alignment. The technique preserves the high-mobility (>10^6 cm^2 /V-s at 2 K) and most (>95%) of the charge density of the 2-dimensional electron gas (2DEG) systems, and allows linear control of the charge density with small (< 1 V) electrostatic gate bias. Our technique is motivated by a novel THz quantum-well detector based on intersubband transitions in a single, wide GaAs/AlGaAs quantum well, in which a symmetric, well-aligned dual-gate structure (with a typical gate dimension of ~5 micron by 5 micron) is required for accurate and precise tuning of the THz detection frequency. Using our Indium-Bond-And-Stop-Etch (IBASE) technique, we realize such dual-gate structure on 660-nm thick GaAs/AlGaAs epitaxial layers that contain a modulation-doped, 40-nm wide, single square quantum well. By independently controlling the charge density and the DC electric field set between the gates, we demonstrate robust tuning of the intersubband absorption behavior of the 40-nm quantum well near 3.44 THz at 30 K.

physics.ins-det↗

arXiv2021

Interaction Effects and Viscous Magneto-Transport in a Strongly Correlated 2D Hole System

Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum corrections to the Drude conductivity in the FL theory, giving rise to temperature dependent conductivity and magneto-resistance. Here we study the magneto-transport in a strongly interacting 2D hole system over a broad range of temperatures ($T$ = 0.09 to $>$1K) and densities $p=1.98-0.99\times10^{10}$ cm$^{-2}$ where the ratio between Coulomb energy and Fermi energy $r_s$ = 20 - 30. We show that while the system exhibits a negative parabolic magneto-resistance at low temperatures ($\lesssim$ 0.4K) characteristic of an interacting FL, the FL interaction corrections represent an insignificant fraction of the total conductivity. Surprisingly, a positive magneto-resistance emerges at high temperatures and grows with increasing temperature even in the regime $T \sim E_F$, close to the Fermi temperature. This unusual positive magneto-resistance at high temperatures is attributed to the collective viscous transport of 2D hole fluid in the hydrodynamic regime where holes scatter frequently with each other. These findings highlight the collective transport in a strongly interacting 2D system in the $r_s\gg 1$ regime and the hydrodynamic transport induced magneto-resistance opens up possibilities to new routes of magneto-resistance at high temperatures.

cond-mat.str-el↗

arXiv2021

Strong interlayer charge transfer due to exciton condensation in an electrically-isolated GaAs quantum well bilayer

We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transport measurements. It also provides the ability to measure the charge transfer between the layers, even when the in-plane resistivities of the 2D systems diverge. We measure the capacitance and inter-layer tunneling spectra of the QW bilayer with independent control of the top and bottom layer electron densities. Our measurements display strongly enhanced inter-layer tunneling current at the total filling factor of 1, a signature of exciton condensation of a strongly interlayer-correlated bilayer system. With fully tunable densities of individual layers, the floating bilayer QW system provides a versatile platform to access previously unavailable information on the quantum phases in electron bilayer systems.

cond-mat.mes-hall↗

arXiv2021

Transport in helical Luttinger liquids in the fractional quantum Hall regime

Domain walls in fractional quantum Hall ferromagnets are gapless helical one-dimensional channels formed at the boundaries of topologically distinct quantum Hall (QH) liquids. Naïvely, these helical domain walls (hDWs) constitute two counter-propagating chiral states with opposite spins. Coupled to an s-wave superconductor, helical channels are expected to lead to topological superconductivity with high order non-Abelian excitations. Here we investigate transport properties of hDWs in the $ν=2/3$ fractional QH regime. Experimentally we found that current carried by hDWs is substantially smaller than the prediction of the naïve model. Luttinger liquid theory of the system reveals redistribution of currents between quasiparticle charge, spin and neutral modes, and predicts the reduction of the hDW current. Inclusion of spin-non-conserving tunneling processes reconciles theory with experiment. The theory confirms emergence of spin modes required for the formation of fractional topological superconductivity.

cond-mat.mes-hall↗

arXiv2019

Spatial Mapping of Local Density Variations in Two-dimensional Electron Systems Using Scanning Photoluminescence

We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. In addition to this global variation in electron density, we observe local density fluctuations across the sample. These random density fluctuations are also seen in samples that were continuously rotated during growth, and we attribute them to residual space charges at the substrate-epitaxy interface. This is corroborated by the fact that the average magnitude of density fluctuations is increased to $\sim9\times10^{9}$ cm$^{-2}$ from $\sim1.2\times10^9$ cm$^{-2}$ when the buffer layer between the substrate and the quantum well is decreased by a factor of seven. Our data provide direct evidence for local density inhomogeneities even in very high-quality two-dimensional carrier systems.

cond-mat.mes-hall↗

arXiv2017

Parafermion supporting platform based on spin transitions in the fractional quantum Hall effect regime

We propose an experimentally-feasible system based on spin transitions in the fractional quantum Hall effect regime where parafermions, high-order non-abelian excitations, can be potentially realized. We provide a proof-of-concept experiments showing that in specially designed heterostructures spin transitions at a filling factor 2/3 can be induced electrostatically, allowing local control of polarization and on-demand formation of helical domain walls with fractionalized charge excitations, a pre-requisite ingredient for parafermions formation. We also present exact diagonalization numerical studies of domain walls formed between domains with different spin polarization in the fractional quantum Hall effect regime and show that they indeed possess electronic and magnetic structure needed for parafermion formation when coupled to an s-wave superconductor.

cond-mat.mes-hall↗

arXiv2017

Sharp Tunneling Resonance from the Vibrations of an Electronic Wigner Crystal

Photoemission and tunneling spectroscopies measure the energies at which single electrons can be added to or removed from an electronic system. Features observed in such spectra have revealed electrons coupling to vibrational modes of ions both in solids and in individual molecules. Here we report the discovery of a sharp resonance in the tunneling spectrum of a 2D electron system. Its behavior suggests that it originates from vibrational modes, not involving ionic motion, but instead arising from vibrations of spatial ordering of the electrons themselves. In a two-dimensional electronic system at very low temperatures and high magnetic fields, electrons can either condense into a variety of quantum Hall phases or arrange themselves into a highly ordered Wigner crystal lattice. Such spatially ordered phases of electrons are often electrically insulating and delicate and have proven very challenging to probe with conventional methods. Using a unique pulsed tunneling method capable of probing electron tunneling into insulating phases, we observe a sharp peak with dependencies on energy and other parameters that fit to models for vibrations of a Wigner crystal. The remarkable sharpness of the structure presents strong evidence of the existence of a Wigner crystal with long correlation length.

cond-mat.str-el↗

arXiv2013

Macroscopic coherence between quantum condensates formed at different times

We demonstrate macroscopic coherence between quantum condensates generated at different times, separated by more than the particle dephasing time. This is possible due to the dressed light-matter nature of exciton-polaritons, which can be injected resonantly by optical excitation at well-defined momenta. We show that the build-up of coherence between condensates depends on the interaction between the particles, particle density, as well as temperature despite the non-equilibrium nature of the condensate, whereas the mass of the particles plays no role in the condensation of resonantly injected polaritons. This experiment also makes it possible for us to measure directly the large nonlinear phase shift resulting from the polariton-polariton interaction energy. Our results provide direct evidence for coherence between different condensates and demonstrate a new approach for probing their ultrafast dynamics, opening new directions in the study of matter coherence as well as in practical applications such as quantum information and ultrafast logic.

cond-mat.quant-gas↗

arXiv2012

Dynamic Stark Effect in Strongly Coupled Microcavity Exciton-Polaritons

We present experimental observations of a non-resonant dynamic Stark shift in strongly coupled microcavity quantum well exciton-polaritons - a system which provides a rich variety of solid-state collective phenomena. The Stark effect is demonstrated in a GaAs/AlGaAs system at 10K by femtosecond pump-probe measurements, with the blue shift approaching the meV scale for a pump fluence of 2 mJcm^-2 and 50 meV red detuning, in good agreement with theory. The energy level structure of the strongly coupled polariton Rabi-doublet remains unaffected by the blue shift. The demonstrated effect should allow generation of ultrafast density-independent potentials and imprinting well-defined phase profiles on polariton condensates, providing a powerful tool for manipulation of these condensates, similar to dipole potentials in cold atom systems.

cond-mat.quant-gas↗

arXiv2011

Probing the spin states of three interacting electrons in quantum dots

We observe a low-lying sharp spin mode of three interacting electrons in an array of nanofabricated AlGaAs/GaAs quantum dots by means of resonant inelastic light scattering. The finding is enabled by a suppression of the inhomogeneous contribution to the excitation spectra obtained by reducing the number of optically-probed quantum dots. Supported by configuration-interaction calculations we argue that the observed spin mode offers a direct probe of Stoner ferromagnetism in the simplest case of three interacting spin one-half fermions.

cond-mat.mes-hall↗

arXiv2010

Effect of strain on stripe phases in the Quantum Hall regime

Spontaneous breaking of rotational symmetry and preferential orientation of stripe phases in the quantum Hall regime has attracted considerable experimental and theoretical effort over the last decade. We demonstrate experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the quantum Hall regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along [110] or [1-10] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible for the observed orientation of CDW in pristine electron and hole samples.

cond-mat.str-el↗

arXiv2002

Joule heating of dilute 2D holes in a GaAs quantum well

We present measurements of the Joule heating of a 2D hole gas (2DHG) formed in a 30nm GaAs quantum well. The hole density is in the range (4.6-18.9)*10^9cm^-2 and exhibits an apparent metal-to-insulator transition (MIT) with a critical density 6*10^9 cm^-2. In the limit of zero heating power density P, the GaAs lattice is within 2 mK of the 6 mK base temperature of our dilution refrigerator determined by He-3 melting curve thermometry. Throughout the range of heating power densities used (1 to 10^6 fW/cm^2), the temperature rise of the lattice is estimated to be negligible compared to the temperature rise of the hole gas. We argue that the hole scattering rate is only a function of the hole temperature, with little dependence on the lattice or impurity temperatures in the relevant temperature range below 150 mK. We have therefore made measurements of the hole resistivity at negligible heating power density (P<5fW/cm^2) as a function of measured lattice temperature in the range 6 to 150 mK. We then use the hole resistivity measured in a cold lattice to estimate the temperature of the 2D hole gas as a function of P. In the low hole density insulating phase, the heating power density P(T) that heats the hole gas to a temperature T exhibits a dependence P ~ T^2 for T<30mK, gradually changing to P ~ T^4 for higher temperatures. On the metallic side of the MIT, P is proportional to T^5 or T^6 with a magnitude roughly 4 times less than the power density required to heat the insulating phase to the same temperature. Our measurements are within a factor of two of the available quantitative theoretical predictions for the hole energy loss rate as a function of temperature.

cond-mat.str-el↗

arXiv2001

The metallic resistance of a dilute two-dimensional hole gas in a GaAs quantum well: two-phase separation at finite temperature?

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field 'metal-insulator transition' (MIT). In a parallel field well above B_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity g(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase having a percolation threshold close to B_c.

cond-mat.str-el↗

arXiv2001

Two-dimensional metal in a parallel magnetic field

We have investigated the effect of an in plane parallel magnetic field (B_||) on two high mobility metallic-like dilute two-dimensional hole gas (2DHG) systems in GaAs quantum wells. The experiments reveal that, while suppressing the magnitude of the low temperature resistance drop, B_|| does not affect E_a, the characteristic energy scale of the metallic resistance drop. The field B_c at which the metallic-like resistance drop vanishes is dependent on both the width of quantum well and the orientation of B_||. It is unexpected that E_a is unaffected by B_|| up to Bc depite that the Zeeman energy at B_c is roughly equal to E_a.

cond-mat.str-el↗