arXiv subjects

Kenshin Inamura

Publications and source records attributed to Kenshin Inamura.

3 recordsLinked to original sources

arXiv2026

Thickness dependence of diode efficiency in superconducting Fe(Se,Te)/FeTe thin-film heterostructure devices

The superconducting diode effect (SDE) is a nonreciprocal transport phenomenon, in which the superconducting critical current density depends on the polarity of the current. It has attracted recent attention because of its potential applications to a rectifier without energy dissipation. While SDE has been observed in a wide range of superconducting materials with broken inversion symmetry as well as thin-film heterostructures, the microscopic origin linking structural inversion asymmetry of electronic band, spin-orbit interaction, and vortex pinning remains to be clarified. In this study, we investigate SDE in Fe(Se,Te)/FeTe heterostructure devices as a function of the superconducting Fe(Se,Te) layer thickness tFST to elucidate the role of structural inversion asymmetry on the vortex-induced SDE. We find that the SDE efficiency monotonically increases with increasing tFST, which can be understood by considering that the band bending in the bulk Fe(Se,Te) layer induces the structural inversion asymmetry and thus, the Rashba spin-orbit interaction. In addition, we demonstrate almost 100% rectification for the Fe(Se,Te)/FeTe heterostructure devices in half- and full-wave oscillation configurations. Our findings point out the importance of structural architecture for realization of highly efficient SDE devices based on superconducting thin-film heterostructures.

cond-mat.supr-con↗

arXiv2026

Thermodynamic stability of twisted domains in AgCrSe$_{2}$ thin films grown on lattice-matched YSZ(111) substrate

Control of structural domains in epitaxial thin films of functional materials is a fundamental technique to utilize their intrinsic physical and chemical properties in solid-state devices. In this study, we report on suppression of twisted-domain formation in thin-film growth of polar magnetic semiconductor AgCrSe$_{2}$ using pulsed-laser deposition. In exploring concomitant optimized growth temperature and Ag/Cr composition ratio of supply, we find the critical growth temperature ($T\mathrm{_{sub}}$) for obtaining single 60$^{\circ}$ domain in c-axis oriented AgCrSe$_{2}$ thin film on a lattice-matched (111) plane of the yttria-stabilized zirconia substrate. At temperatures below and above the critical $T\mathrm{_{sub}}$, metastable 0$^{\circ}$ domain in addition to the 60$^{\circ}$ domain emerges, indicating delicate energy balance of thermodynamic stability for obtaining the single-domain structure. Surface structural analysis using time-of-flight low-energy atom scattering spectroscopy reveals the presence of two polar orientations along $+Z$ and $-Z$ directions. These findings provide valuable insights into the thin-film growth mechanisms for a family of two-dimensional compounds with rhombohedral lattices.

cond-mat.mtrl-sci↗

arXiv2025

Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition

We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and N\'eel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces.

cond-mat.mtrl-sci↗