arXiv subjects

Kensuke Hayashi

Publications and source records attributed to Kensuke Hayashi.

4 recordsLinked to original sources

arXiv2026

Giant staggered Dzyaloshinskii-Moriya vectors emerged in synthetic antiferromagnets with spatially alternating stress

Dzyaloshinskii-Moriya (DM) interaction is a source of chiral magnetic physics, and it manifests microstructural symmetry which could link to exotic magnetic and electronic properties such as altermagnetism. For a new paradigm in magnetism and spintronics, it is crucial to have control on the DM interaction as well as ordering of the DM vectors which characterize the DM interaction. Here, we report on a strong interlayer DM interaction emerged in Co/Ru magnetic superlattices whose structural symmetry is unambiguously broken by alternating mechanical strains developed using the peculiar technique of our stress mechanism. Moreover, theoretical analyses reveal that our magnetic superlattices host a staggered order of the DM vectors. Our results indicate that the spatially varying strains with our breakthrough technique are quite effective in breaking the symmetry of the system and prove that it can control the DM interaction strength as well as the DM vector order.

cond-mat.mtrl-sci↗

arXiv2026

Laterally Differentiated Polymorphs: a route to multifunctional nanostructures

Multifunctional materials can exhibit emergent behavior from the coupling of two or more different properties. For example, coupling between magnetic and ferroelectric order enables electrical control of the magnetic state, enabling for example magnetoelectric memory or logic devices that combine the nonvolatility of magnetic order with the energy efficiency of voltage control. Magnetic iron garnets have outstanding magnonic and magnetooptical properties making them valuable in a range of technologies, but they have not been successfully incorporated into thin film two-phase magnetoelectric nanocomposites. Taking advantage of heterogeneously patterned substrates, this work demonstrates the engineering of garnet-perovskite composites in which both phases are polymorphs with the same composition but dramatically different structures and properties. Applying an electric field to the perovskite phase modulates the magnon dispersion and magnetooptical response of the garnet, opening a path to voltage-controlled garnet devices.

cond-mat.mtrl-sci↗

arXiv2026

Distinct memory properties in spin-wave reservoir computing based on synthetic antiferromagnet

Spin-wave-based physical reservoir computing (RC) is a promising candidate for energy-efficient physical implementations of artificial intelligence because of its potential for nanoscale integration with low power consumption. Most of the previous studies on spin-wave RC have utilized spin waves excited in a single-layer ferromagnet. In this study, we focused on spin waves in a synthetic antiferromagnet (SAF), consisting of two ferromagnetic layers coupled antiferromagnetically, and investigated additional memory properties of spin-wave RC. We theoretically and numerically demonstrate the emergence of two distinct memory properties in the SAF device due to the distinct spin-wave characteristics of the acoustic and optical modes inherent in SAFs.

cond-mat.mtrl-sci↗

arXiv2025

Strain Mediated Voltage Control of Magnetic Anisotropy and Magnetization Reversal in Bismuth Substituted Yttrium Iron Garnet Films and Meso-structures

We report on magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on a PMN-PT substrate with the application of voltage-induced strain. The Bi content is selected for low coercivity and higher magnetostriction than that of YIG, yielding significant changes in the hysteresis loops through the magnetoelastic effect. The piezoelectric substrate is poled along its thickness, which is the [011] direction, by applying a voltage across the PMN-PT/SiO2/Bi-YIG/Pt heterostructure. In-situ magneto-optical Kerr effect microscopy (MOKE) shows the modulation of magnetic anisotropy with voltage-induced strain. Furthermore, voltage control of the magnetic domain state of the Bi-YIG film at a fixed magnetic field produces a 90{\deg} switching of the magnetization easy axis above a threshold voltage. The magnetoelectric coefficient of the heterostructure is 1.05x10^(-7)s/m which is competitive with that of other ferromagnetic oxide films on ferroelectric substrates such as La0.67Sr0.33MnO3/PMNPT and YIG/PMN-PZT. Voltage-control of magnetization reversal fields in 5-30 microns wide dots and racetracks of Bi-YIG show potential for energy efficient non-volatile memory and neuromorphic computing devices.

cond-mat.mtrl-sci↗