SearcharxivSearch

arXiv subjects

Kentaro Ishida

Publications and source records attributed to Kentaro Ishida.

2 recordsLinked to original sources

Symmetry-resolved magnetoelastoresistance in multivalley bismuth

We report a symmetry-resolved study of longitudinal magnetoelastoresistance (MER) in the multivalley material bismuth, with the current, uniaxial stress, and magnetic field all applied along the binary axis. The magnitude of MER exhibits a steep increase at low magnetic fields, reaches a peak, and then gradually decreases at higher fields. By decomposing the strain response into symmetric and antisymmetric symmetry channels, we reveal contrasting magnetic field dependencies. Despite the overall non-monotonic field dependence of the MER, the symmetric component remains nearly constant under magnetic fields, suggesting that the valleys in bismuth preserve a rigid-band nature against strain even in the presence of a magnetic field. In contrast, the antisymmetric component, associated with mobility anisotropy, dominates the MER response in a magnetic field. At low magnetic fields, the applied field effectively modifies the apparent mobility of each valley, leading to an enhancement in the magnitude of the antisymmetric MER. At higher fields, field-induced valley polarization further modifies this mobility anisotropy by altering the contributions from each valley's mobility, accounting for the moderate suppression of the MER. These findings demonstrate that symmetry-resolved MER serves as a powerful probe of valley-dependent electronic states and provides a fundamental platform for understanding the interplay between magnetic field, strain, and charge transport.

cond-mat.mes-hall

Effects of strain-tunable valleys on charge transport in bismuth

The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which the strain-band engineering through the substrates can serve to improve the performance of valley-based devices. However, pinpointing the effective role of strain is inevitable for the precise design of the desired valley structure. Here, we demonstrate the charge transport under continuously controllable external strain for bulk bismuth crystals with three equivalent electron valleys and one hole valley. The strain response of resistance, namely elastoresistance, exhibits the evolutions in both antisymmetric and symmetric channels with decreasing temperature. The elastoresistance behaviors mainly reflect the significant changes in valley density depending on the symmetry of induced strain, evidenced by our strain-dependent quantum oscillation measurements and first-principle band calculations under strain. These facts suggest the successful tune and evaluation of the valley populations through strain-dependent charge valley transport.

cond-mat.mtrl-sci