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Keshava Katti

Publications and source records attributed to Keshava Katti.

6 recordsLinked to original sources

Neural dynamical systems on ferroelectric compute-in-memory for real-time forecasting

Neural dynamical systems are expressive temporal predictors that capture continuous-time dynamics through fine-grained state updates. However, this sequential structure maps poorly onto digital hardware optimized for dense matrix operations, a mismatch that analog neuromorphic computing, with its native continuous-time dynamics, can resolve. We introduce FerroNDS, a neuromorphic system built from two analog primitives: an integrator for temporal accumulation and an oscillator for frequency-selective filtering. We map this system onto compute-in-memory hardware based on multi-bit ferrodiodes. A 128-neuron instance of FerroNDS computes short-time Fourier transform and forecasts a 500-ms horizon for periodic, quasi-periodic, and chaotic signals. The system achieves sub-watt real-time operation with per-neuron per-inference energy of 1.64 $\mu$J (200 Hz) and 0.29 $\mu$J (10 kHz), 25-40$\times$ area reduction over SRAM-based digital systems, and per-layer latency of 3.18 ms (200 Hz) and 63.87 $\mu$s (10 kHz). To our knowledge, this is the first end-to-end integration of a ferrodiode into a neuromorphic computational framework, establishing ferroelectric compute-in-memory as a practical substrate for analog neural dynamical systems.

cs.ET

Neuromorphic Computing for Low-Power Artificial Intelligence

Classical computing is beginning to encounter fundamental limits of energy efficiency. This presents a challenge that can no longer be solved by strategies such as increasing circuit density or refining standard semiconductor processes. The growing computational and memory demands of artificial intelligence (AI) require disruptive innovation in how information is represented, stored, communicated, and processed. By leveraging novel device modalities and compute-in-memory (CIM), in addition to analog dynamics and sparse communication inspired by the brain, neuromorphic computing offers a promising path toward improvements in the energy efficiency and scalability of current AI systems. But realizing this potential is not a matter of replacing one chip with another; rather, it requires a co-design effort, spanning new materials and non-volatile device structures, novel mixed-signal circuits and architectures, and learning algorithms tailored to the physics of these substrates. This article surveys the key limitations of classical complementary metal-oxide-semiconductor (CMOS) technology and outlines how such cross-layer neuromorphic approaches may overcome them.

cs.AR

MammoFL: Mammographic Breast Density Estimation using Federated Learning

In this study, we automate quantitative mammographic breast density estimation with neural networks and show that this tool is a strong use case for federated learning on multi-institutional datasets. Our dataset included bilateral CC-view and MLO-view mammographic images from two separate institutions. Two U-Nets were separately trained on algorithm-generated labels to perform segmentation of the breast and dense tissue from these images and subsequently calculate breast percent density (PD). The networks were trained with federated learning and compared to three non-federated baselines, one trained on each single-institution dataset and one trained on the aggregated multi-institution dataset. We demonstrate that training on multi-institution datasets is critical to algorithm generalizability. We further show that federated learning on multi-institutional datasets improves model generalization to unseen data at nearly the same level as centralized training on multi-institutional datasets, indicating that federated learning can be applied to our method to improve algorithm generalizability while maintaining patient privacy.

eess.IV

Analog Content-Addressable Memory from Complementary FeFETs

To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlooked. Current parallel search architectures, namely content-addressable memory (CAM), often use binary, which restricts density and functionality. We present an analog CAM (ACAM) cell, built on two complementary ferroelectric field-effect transistors (FeFETs), that performs parallel search in the analog domain with over 40 distinct match windows. We then deploy it to calculate similarity between vectors, a building block in the following two machine learning problems. ACAM outperforms ternary CAM (TCAM) when applied to similarity search for few-shot learning on the Omniglot dataset, yielding projected simulation results with improved inference accuracy by 5%, 3x denser memory architecture, and more than 100x faster speed compared to central processing unit (CPU) and graphics processing unit (GPU) per similarity search on scaled CMOS nodes. We also demonstrate 1-step inference on a kernel regression model by combining non-linear kernel computation and matrix multiplication in ACAM, with simulation estimates indicating 1,000x faster inference than CPU and GPU.

cs.ET

Accelerate & Actualize: Can 2D Materials Bridge the Gap Between Neuromorphic Hardware and the Human Brain?

Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic structure, physical properties, and atomically-thin, van der Waals structures that enable ease of integration with conventional electronic materials and silicon-based hardware. All major classes of non-volatile memory (NVM) devices have been demonstrated using 2D materials, including their operation as synaptic devices for applications in neuromorphic computing hardware. Their atomically-thin structure, superior physical properties, i.e., mechanical strength, electrical and thermal conductivity, as well as gate-tunable electronic properties provide performance advantages and novel functionality in NVM devices and systems. However, device performance and variability as compared to incumbent materials and technology remain major concerns for real applications. Ultimately, the progress of 2D materials as a novel class of electronic materials and specifically their application in the area of neuromorphic electronics will depend on their scalable synthesis in thin-film form with desired crystal quality, defect density, and phase purity.

cond-mat.mes-hall

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.

physics.app-ph