Off-stoichiometric variable doping for exceptional power factors in L2$_1$ Fe$_2$VAlM$_x$ (M=Ti, W) epitaxial thin films
We show that the addition of Ti or W to stoichiometric L2$_1$ Fe$_2$VAl thin films by sputter codeposition produces off stoichiometric thin film alloys with superior thermoelectric properties than their stoichiometric counterparts. Ti incorporation induces p-type semiconducting behavior, while W incorporation shifts the material toward n-type, hereby enabling simultaneous tuning of both carrier types within a single parent (Fe$_2$VAl) material system, making it highly desirable for thermoelectric devices. The introduction of both Ti and W partly substitutes V in the stoichiometric compound. The partial substitution of V in the stoichiometric alloy allows fine-tuning the band structure of the system and transport properties. With this approach we obtain exceptional maximum power factor values for p and n-type films of 1300 $μ$W/m$\cdot$K$^2$ and 2100 $μ$W/m$\cdot$K$^2$ ,respectively, yielding maximum figures of merit zT of 0.07 and 0.14, respectively.