arXiv subjects

Keun Su Kim

Publications and source records attributed to Keun Su Kim.

14 recordsLinked to original sources

arXiv2025

Dark states of electrons in a quantum system with two pairs of sublattices

A quantum state of matter that is forbidden to interact with photons and is therefore undetectable by spectroscopic means is called a dark state. This basic concept can be applied to condensed matter where it suggests that a whole band of quantum states could be undetectable across a full Brillouin zone. Here we report the discovery of such condensed matter dark states in palladium diselenide as a model system that has two pairs of sublattices in the primitive cell. By using angle-resolved photoemission spectroscopy, we find valence bands that are practically unobservable over the whole Brillouin zone at any photon energy, polarisation, and scattering plane. Our model shows that two pairs of sublattices located at half-translation positions and related by multiple glide-mirror symmetries make their relative quantum phases polarised into only four kinds, three of which become dark due to double destructive interference. This mechanism is generic to other systems with two pairs of sublattices, and we show how the phenomena observed in cuprates, lead-halide perovskites, and density wave systems can be resolved by the mechanism of dark states. Our results suggest that the sublattice degree of freedom, which has been overlooked so far, should be considered in the study of correlated phenomena and optoelectronic characteristics.

cond-mat.supr-con↗

arXiv2025

Pseudogap in a crystalline insulator doped by disordered metals

A key to understand how electrons behave in crystalline solids is the band structure that connects the energy of electron waves to their wavenumber (k). Even in the phase of matter with only short-range order (liquid or amorphous solid), the coherent part of electron waves still possesses a band structure. Theoretical models for the band structure of liquid metals were formulated more than 5 decades ago, but thus far, bandstructure renormalization and pseudogap induced by resonance scattering have remained unobserved. Here, we report the observation of this unusual band structure at the interface of a crystalline insulator (black phosphorus) and disordered dopants (alkali metals). We find that a conventional parabolic band structure of free electrons bends back towards zero k with the pseudogap of 30-240 meV from the Fermi level. This is k renormalization caused by resonance scattering that leads to the formation of quasi-bound states in the scattering potential of alkali-metal ions. The depth of this potential tuned by different kinds of alkali metal (Na, K, Rb, and Cs) allows to classify the pseudogap of p-wave and d-wave resonance. Our results may provide a clue to the puzzling spectrum of various crystalline insulators doped by disordered dopants, such as the waterfall dispersion in cuprates.

cond-mat.str-el↗

arXiv2025

Electronic rotons and Wigner crystallites in a two-dimensional dipole liquid

A key concept proposed by Landau to explain superfluid liquid helium is the elementary excitation of quantum particles called rotons. The irregular arrangement of atoms in a liquid forms the aperiodic dispersion of rotons that played a pivotal role in understanding fractional quantum Hall liquid (magneto-rotons) and the supersolidity of Bose-Einstein condensates. Even for a two-dimensional electron or dipole liquid in the absence of a magnetic field, their repulsive interactions were predicted to form a roton minimum that can be used to trace the transition to Wigner crystals and superconductivity, but it has not been observed. Here, we report the observation of such electronic rotons in a two-dimensional dipole liquid of alkali-metal ions doping charges to surface layers of black phosphorus. Our data reveal a striking aperiodic dispersion of rotons characterized by a local minimum of energy at a finite momentum. As the density of dipoles decreases, where interactions dominate over kinetic energy, the roton gap reduces to 0 as in crystals, signalling Wigner crystallisation. Our model shows the importance of short-range order arising from repulsion between dipoles, which can be viewed as the formation of Wigner crystallites (bubbles or stripes) floating in the sea of Fermi liquids. Our results reveal that the primary origin of electronic rotons (and the pseudogap) is strong correlations.

cond-mat.str-el↗

arXiv2018

Holstein polaron in a valley-degenerate two-dimensional semiconductor

Two-dimensional (2D) crystals have emerged as a class of materials with tuneable carrier density. Carrier doping to 2D semiconductors can be used to modulate manybody interactions and to explore novel composite particles. Holstein polaron is a small composite particle of an electron carrying a cloud of self-induced lattice deformation (or phonons), which has been proposed to play a key role in high-temperature superconductivity and carrier mobility in devices. Here, we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS2, where a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently. Using a high-resolution band mapping of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons. The unexpected short-range nature of electron-phonon (e-ph) coupling in MoS2 can be explained by its valley degeneracy that enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to gradually increase along the superconducting dome up to the intermediate regime, suggesting bipolaronic pairing in 2D superconductivity.

cond-mat.supr-con↗

arXiv2017

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

Two-dimensional (2D) van-der-Waals semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic bandgap. For realistic applications, the ideal is to modify the bandgap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable bandgap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface doping of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the bandgap of TMDs at the zone corners is modulated in the range of 0.8 ~ 2.0 eV, which covers a wide spectral range from visible to near infrared, with a tendency from indirect to direct bandgap. A key clue to understand the mechanism of this bandgap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of bandgap engineering based on the strong 2D nature of van-der-Waals semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Two-Dimensional Dirac Fermions Protected by Space-Time Inversion Symmetry in Black Phosphorus

We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve a surprisingly large band inversion up to ~0.6 eV. High-resolution angle-resolved photoemission spectra directly reveal the pair creation of Dirac points and their moving along the axis of the glide-mirror symmetry. Unlike graphene, the Dirac point of black phosphorus is stable, as protected by spacetime inversion symmetry, even in the presence of spin-orbit coupling. Our results establish black phosphorus in the inverted regime as a simple model system of 2D symmetry-protected (topological) Dirac semimetals, offering an unprecedented opportunity for the discovery of 2D Weyl semimetals.

cond-mat.mtrl-sci↗

arXiv2016

A Novel Quasi-One-Dimensional Topological Insulator in Bismuth Iodide $β$-Bi$_4$I$_4$

Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $β$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $β$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.

cond-mat.mtrl-sci↗

arXiv2015

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications.

cond-mat.mtrl-sci↗

arXiv2015

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2013

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

cond-mat.mtrl-sci↗

arXiv2012

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)

Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data.

cond-mat.mes-hall↗

arXiv2011

Radial Band Structure of Electrons in Liquid Metals

The electronic band structure of a liquid metal was investigated by measuring precisely the evolution of angle-resolved photoelectron spectra during the melting of a Pb monolayer on a Si(111) surface. We found that the liquid monolayer exhibits a free-electron-like band and it undergoes a coherent radial scattering, imposed by the radial correlation of constituent atoms, to form a characteristic secondary hole band. This unique double radial bands and their gradual evolution during melting can be quantitatively reproduced, including detailed spectral intensity profiles, with our radial scattering model based on a theoretical prediction of 1962. Our result establishes the radial band structure as a key concept for describing the nature of electrons in strongly disordered states of matter.

cond-mat.mtrl-sci↗

arXiv2011

Electronic structure of graphene on single crystal copper substrates

The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $π$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Γ$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.

cond-mat.mes-hall↗

arXiv2010

Nearly Massless Electrons in the Silicon Interface with a Metal Film

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied for various other semiconductor devices.

cond-mat.mtrl-sci↗