SearcharxivSearch

arXiv subjects

Kevin Davenport

Publications and source records attributed to Kevin Davenport.

3 recordsLinked to original sources

Microscopic scales and mechanism of quantum phase transitions in two-dimensional superconducting systems

The superconducting ground state in many two-dimensional materials can be created or destroyed through quantum phase transitions (QPTs) controlled by non-thermal parameters such as carrier density or magnetic field. While various mechanisms for these QPTs have been proposed, it remains unclear which, if any, are applicable to a specific two-dimensional superconducting system. Here, we find that a pair-breaking mechanism which suppresses the Cooper pair density gives a unifying description of magnetic-field-driven QPTs in amorphous MoGe, Pb and TaN films, and the high-temperature superconductor La$_{1.92}$Sr$_{0.08}$CuO$_{4}$. This transition occurs within the superconducting subsystem and is masked by the dominant non-critical contribution of normal electrons. The discovery was enabled by the development of a QPT model that goes beyond the conventional determination of the critical exponents and incorporates into the analysis a microscopic length scale characterizing the transitions. We found that in the materials studied, and MoGe nanowires, this scale corresponds to the size of a Cooper pair. The model has also been successfully applied to QPTs in Josephson junction arrays and various non-superconducting materials. The observation that microscopic scales are encoded in the scaled experimental data of QPTs likely extends beyond equilibrium condensed matter physics and may reveal underlying principles of critical phenomena in a wide variety of systems.

cond-mat.supr-con

Silicon heterojunction solar cells explored via noise spectroscopy: spatial selectivity and the influence of a-Si passivating layers

We have employed state-of-the-art cross-correlation noise spectroscopy to study carrier dynamics in silicon heterojunction solar cells, complimented by SENTARUS simulations of the same devices. These cells were composed of a light absorbing n-doped crystalline silicon layer contacted by passivating layers of i-a-Si:H and doped a-Si:H electrode layers. The method provided a two-orders-of-magnitude improved sensitivity and allowed to resolution of three additional contributions to noise in addition to 1/f noise. We have observed shot noise with Fano factor close to unity. We have also observed a peculiar generation-recombination term, which presents only under light illumination with energy above 2 eV and thus reflects light absorption and carrier trapping in the a-Si:H layers. A second, low-frequency generation-recombination term was detected at temperatures below 100 K. We argue that it appears because the process of charge carrier transfer across i-a-Si:H occurs via an intermediate defect limited by tunneling above about 100 K and a thermally assisted process below this temperature. We also discuss the spatial selectivity of noise spectroscopy, namely the tendency of the method to amplify noise contributions from the most resistive element of the cell. Indeed, in our case, all three terms are linked to the passivating i-a-Si:H layer.

physics.app-ph

An analysis of carrier dynamics in methylammonium lead triiodide perovskite solar cells using cross-correlation noise spectroscopy

Using cross-correlation current noise spectroscopy, we have investigated carrier dynamics in methylammonium lead triiodide solar cells. This method provides a space selectivity for devices with planar multi-layered structure, effectively amplifying current noise contributions coming from the most resistive element of the stack. In the studied solar cells, we observe near full-scale shot noise, indicating the dominance of noise generation by a single source, likely the interface between the perovskite and the spiro-OMeTAD hole-transport layer. We argue that the strong 1/f noise term has contributions both from the perovskite layer and interfaces. It displays non-ideal dependence on photocurrent, $S \propto I^{1.4}$ (instead of usual $S \propto I^2$ ), which is likely due to current-induced halide migration. Finally, we observe generation-recombination noise. The relaxation time of this process grows linearly with photocurrent, which allows to attribute this contribution to bimolecular recombination in the perovskite bulk absorption layer. Extrapolating our results, we estimate that at the standard 1 sun illumination the electron-hole recombination time is 5 microseconds.

physics.app-ph