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Kevin Kistermann

Publications and source records attributed to Kevin Kistermann.

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Reconciling Latent Variables and Networks: Exploring and extending the Psychometric-Toolbox

Since the introduction of network psychometrics, several connections to statistical models in "classical" psychometrics (i.e., IRT, SEM, GLM) as well as to approaches from other research fields have been established. In this paper, these developments have been reviewed and synthesized and, based on an exploratory literature search, further advanced and presented in an accessible visual format. This perspective opens up promising opportunities to extend the psychometric-toolbox by incorporating and learning from statistical methodologies developed in other research domains, which often address similar or even identical problems. Highlighting these methodological commonalities may also foster collaboration across research fields that have traditionally remained largely independent. Moreover, awareness of these connections may render methodological development more systematic and goal-directed and may enable a meaningful division of labor, for example between the development of statistical methodology and its practical implementation for empirical research through software tools. Finally, these methodological advances provide new opportunities for empirical research and may contribute to a reconciliation with longstanding conceptual issues concerning psychometric constructs and, more broadly, psychological phenomena.

stat.ME

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$.

physics.app-ph