arXiv subjects

Kevin L. Silverman

Publications and source records attributed to Kevin L. Silverman.

16 recordsLinked to original sources

arXiv2026

Stimulated Brillouin Scattering in InGaP-on-Insulator Waveguides

Stimulated Brillouin Scattering (SBS) is a nonlinear interaction between optical and acoustic waves in solids. First regarded as a parasitic process in optical fibers, it has gathered significant interest in microwave photonic applications such as optical signal processing and narrow linewidth lasers. While many Brillouin system demonstrations have been done on photonic chips, they struggle to provide simultaneous high Brillouin gain and narrow linewidth in a scalable platform, capable of integration with established photonic integrated circuits. Here, we present a novel integrated InGaP-on-SiO$_2$ platform, where a single crystalline InGaP waveguide layer offers superior material properties and strong nonlinearities to support SBS near 1550 nm wavelength. We demonstrate backward SBS with a measured high Brillouin gain coefficient of $588\, \mathrm{W}^{-1}\,\mathrm{m}^{-1}$ and a record narrow linewidth of 5.2 MHz at 9.346 GHz frequency shift. This work establishes a wafer-scale complementary metal-oxide semiconductor compatible fabrication process, paving a scalable path for high gain and narrow linewidth Brillouin photonics with applications such as precision signal processing.

physics.optics↗

arXiv2026

Deterministic single-photon source with on-chip 5.6 GHz acoustic clock

Scalable solid-state single-photon sources with triggered single-photon emission rates exceeding a few GHz would aid in the wide technological adoption of photonic quantum technologies. We demonstrate triggering of a quantum dot (QD) single photon emission using dynamic Purcell effect induced at a frequency of several GHz by acoustic strain. To this end, InAs QDs are integrated in a hybrid photon-phonon patterned microcavity with engineered optical and acoustic phonon degrees of freedom. The density of optical states is tailored by the lateral confinement of photons in um-sized traps defined lithographically in the microcavity spacer. The single-photon character of the emission from a QD in a trap is confirmed by measuring single-photon statistics. We demonstrate modulation of the QD transition energy in a trap with a frequency up to 14 GHz by monochromatic longitudinal bulk acoustic phonons generated by piezoelectric transducers. For the modulation frequency of 5.6 GHz, corresponding to the acoustic mode of the microcavity, the QD energy is periodically shifted through a spectrally narrow confined photonic mode leading to an appreciable enhancement of the QD emission due to the dynamic Purcell effect. We numerically explored time-evolution of the QD-cavity system under modulation and identified conditions that could enable single-photon rates exceeding 5 GHz. The platform thus enables the implementation of scalable III-V-based single-photon sources with on-chip tunable acoustic clocks with frequencies that can exceed several GHz under continuous wave optical excitation.

cond-mat.mes-hall↗

arXiv2026

Hybrid Acousto-Optical Double Dressing of a Two-Level System

We experimentally investigate resonance fluorescence from a two-level system in a novel configuration where a strong laser drives an optical Rabi oscillation while an acoustic field parametrically modulates the frequency of the two-level system. We observe emission spectra that deviate markedly from the standard Mollow triplet, including dynamical cancellation of the central peak. A doubly dressed state model incorporating hybridization among the emitter, optical field, and acoustic field captures these features. Guided by this model, we experimentally validate the condition for optimal cooling of acoustic phonons in an emitter-optomechanical system. These results reveal new regimes of strongly driven quantum nonlinear interactions.

quant-ph↗

arXiv2025

Heterogeneous tantala photonic integrated circuits for sub-micron wavelength applications

Atomic and trapped-ion systems are the backbone of a new generation of quantum-based positioning, navigation, and timing (PNT) technologies. The miniaturization of such quantum systems offers tremendous technological advantages, especially the reduction of system size, weight, and power consumption. Yet, this has been limited by the absence of compact, standalone photonic integrated circuits (PICs) at the wavelengths suitable for these instruments. Mobilizing such photonic systems requires development of fully integrated, on-chip, active components at sub-micrometer wavelengths. We demonstrate heterogeneous photonic integrated circuits operating at 980 nm based on wafer-scale bonding of InGaAs quantum well active regions to tantalum pentoxide passive components. This high-yield process provides > 95 % surface area yield and enables integration of > 1300 active components on a 76.2 mm (3 inch) silicon wafer. We present a diverse set of functions, including semiconductor optical amplifiers, Fabry-Perot lasers, and distributed feedback lasers with 43 dB side-mode suppression ratio and > 250 GHz single-mode tuning range. We test the precise wavelength control and system level functionality of the on-chip lasers by pumping optical parametric oscillation processes in microring resonators fabricated on the same platform, generating short-wavelength signals at 778 nm and 752 nm. These results provide a pathway to realize fully functional integrated photonic engines for operation of compact quantum sensors based on atomic and trapped-ion systems.

physics.optics↗

arXiv2024

Modeling Short-Range Microwave Networks to Scale Superconducting Quantum Computation

A core challenge for superconducting quantum computers is to scale up the number of qubits in each processor without increasing noise or cross-talk. Distributed quantum computing across small qubit arrays, known as chiplets, can address these challenges in a scalable manner. We propose a chiplet architecture over microwave links with potential to exceed monolithic performance on near-term hardware. Our methods of modeling and evaluating the chiplet architecture bridge the physical and network layers in these processors. We find evidence that distributing computation across chiplets may reduce the overall error rates associated with moving data across the device, despite higher error figures for transfers across links. Preliminary analyses suggest that latency is not substantially impacted, and that at least some applications and architectures may avoid bottlenecks around chiplet boundaries. In the long-term, short-range networks may underlie quantum computers just as local area networks underlie classical datacenters and supercomputers today.

quant-ph↗

arXiv2024

Gated InAs quantum dots embedded in surface acoustic wave cavities for low-noise optomechanics

Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to deterministically control the charge state and reduce charge noise of the QDs. Here, we integrate gated QDs and SAW cavities using molecular beam epitaxy and nanofabrication. We demonstrate that with careful design of the substrate layer structure, integration of the two systems can be accomplished while retaining the optimal performance of each subsystem. These results mark a critical step toward efficient and low-noise optomechanical systems for microwave-to-optical quantum transduction.

quant-ph↗

arXiv2023

Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots

III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates -- as opposed to suspended or wafer-bonded substrates -- for greatly improved photon collection from InAs quantum dots. The structures utilize a unique two-tiered distributed Bragg reflector (DBR) structure for vertical electric field confinement over a broad angular range. Opposing ``openings" in the cavities induce strongly polarized QD luminescence without harming collection efficiencies. We describe how measured enhancements depend critically on the choice of collection optics. This is important to consider when evaluating the performance of any photonic structure that concentrates farfield emission intensity. Our cavity designs are useful for integrating QDs with other quantum systems that require bulk substrates, such as surface acoustic wave phonons.

physics.optics↗

arXiv2022

Large Single-Phonon Optomechanical Coupling between Quantum Dots and Tightly Confined Surface Acoustic Waves in the Quantum Regime

Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally established. Although the interaction mechanism varies, small acoustic cavities with large zero-point motion are required for high efficiencies. We experimentally establish the feasibility of this platform through electro- and opto-mechanical characterization of tightly focusing, single-mode Gaussian SAW cavities at $\sim$3.6 GHz on GaAs. We explore the performance limits of the platform by fabricating SAW cavities with mode volumes approaching 6$λ^3$ and linewidths $\leq$1 MHz. Employing strain-coupled single InAs QDs as optomechanical intermediaries, we measure single-phonon optomechanical coupling rates $g_0 \approx 2π\times 1.2$ MHz. Sideband scattering rates thus exceed intrinsic phonon loss, indicating the potential for quantum optical readout and transduction of cavity phonon states. To demonstrate the feasibility of this platform for low-noise ground-state quantum transduction, we develop a fiber-based confocal microscope in a dilution refrigerator and perform single-QD resonance fluorescence sideband spectroscopy at mK temperatures. These measurements show conversion between microwave phonons and optical photons with sub-natural linewidths.

physics.app-ph↗

arXiv2021

Quantum phase modulation with acoustic cavities and quantum dots

Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quantum systems. Here, we use gigahertz-frequency focusing surface acoustic wave cavities on GaAs that are piezo-electrically coupled to superconducting circuits and parametrically coupled, via strain, to photons scattered from InAs quantum dots . We demonstrate strong modulation of single photons with a half-wave voltage as low as 44 mV, and subnatural modulation sideband linewidths. These demonstrations pave the way for efficient and low-noise transduction of quantum information between microwave and optical domains.

quant-ph↗

arXiv2020

Optimization of photoluminescence from W centers in silicon-on-insulator

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.

physics.app-ph↗

arXiv2018

Moiré Excitons in Van der Waals Heterostructures

In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.

cond-mat.mes-hall↗

arXiv2018

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe$_2$

In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 $μ$s. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications.

cond-mat.mes-hall↗

arXiv2017

All-silicon light-emitting diodes waveguide-integrated with superconducting single-photon detectors

We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $μ$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device. Such on-chip optical links may be useful for quantum information or neuromorphic computing applications.

physics.app-ph↗

arXiv2016

Optical amplitude and phase modulation dynamics at the single-photon level in a quantum dot ridge waveguide

The amplitude and phase of a material's nonlinear optical response provide insight into the underlying electronic dynamics that determine its optical properties. Phase-sensitive nonlinear spectroscopy techniques are widely implemented to explore these dynamics through demodulation of the complex optical signal field into its quadrature components; however, complete reconstruction of the optical response requires measuring both the amplitude and phase of each quadrature, which is often lost in standard detection methods. Here, we implement a heterodyne-detection scheme to fully reconstruct the amplitude and phase response of spectral hole-burning from InAs/GaAs charged quantum dots. We observe an ultra-narrow absorption profile and a corresponding dispersive lineshape of the phase, which reflect the nanosecond optical coherence time of the charged exciton transition. Simultaneously, the measurements are sensitive to electron spin relaxation dynamics on a millisecond timescale, as this manifests as a magnetic-field dependent delay of the amplitude and phase modulation. Appreciable amplitude modulation depth and nonlinear phase shift up to 0.09$\timesπ$ radians (16$°$) are demonstrated, providing new possibilities for quadrature modulation at faint photon levels with several independent control parameters, including photon number, modulation frequency, detuning, and externally applied fields.

cond-mat.mes-hall↗

arXiv2015

Electronic Coherence Control in a Charged Quantum Dot

Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information science and photonics research. Nature sets the ultimate limit, however, given by the strength of the system's coupling to the electromagnetic field. Here, we establish the ability to electronically control this coupling and $\textit{enhance}$ the coherence time of a quantum dot excitonic state. Coherence control is demonstrated on the positively charged exciton transition (an electron Coulomb-bound with two holes) in quantum dots embedded in a photonic waveguide by manipulating the electron and hole wavefunctions through an applied lateral electric field. With increasing field up to 15 kV cm$^{-1}$, the coherence time increases by a factor of two from $\sim1.4$ ns to $\sim2.7$ ns. Numerical calculations reveal that longer coherence arises from the separation of charge carriers by up to $\sim6$ nm, which leads to a $30\%$ weaker transition dipole moment. The ability to electrostatically control the coherence time and transition dipole moment opens new avenues for quantum communication and novel coupling schemes between distant qubits.

cond-mat.mes-hall↗

arXiv2013

Multidimensional Coherent Photocurrent Spectroscopy of a Semiconductor Nanostructure

Multidimensional Coherent Optical Photocurrent Spectroscopy (MD-COPS) is implemented using unstabilized interferometers. Photocurrent from a semiconductor sample is generated using a sequence of four excitation pulses in a collinear geometry. Each pulse is tagged with a unique radio frequency through acousto-optical modulation ; the Four-Wave Mixing (FWM) signal is then selected in the frequency domain. The interference of an auxiliary continuous wave laser, which is sent through the same interferometers as the excitation pulses, is used to synthesize reference frequencies for lock-in detection of the photocurrent FWM signal. This scheme enables the partial compensation of mechanical fluctuations in the setup, achieving sufficient phase stability without the need for active stabilization. The method intrinsically provides both the real and imaginary parts of the FWM signal as a function of inter-pulse delays. This signal is subsequently Fourier transformed to create a multi-dimensional spectrum. Measurements made on the excitonic resonance in a double InGaAs quantum well embedded in a p-i-n diode demonstrate the technique.

physics.optics↗