arXiv subjects

Khoong Hong Khoo

Publications and source records attributed to Khoong Hong Khoo.

7 recordsLinked to original sources

arXiv2023

Quantifying the magnetic interactions governing chiral spin textures using deep neural networks

The interplay of magnetic interactions in chiral multilayer films gives rise to nanoscale topological spin textures, which form attractive elements for next-generation computing. Quantifying these interactions requires several specialized, time-consuming, and resource-intensive experimental techniques. Imaging of ambient domain configurations presents a promising avenue for high-throughput extraction of the parent magnetic interactions. Here we present a machine learning-based approach to determine the key interactions -- symmetric exchange, chiral exchange, and anisotropy -- governing chiral domain phenomenology in multilayers. Our convolutional neural network model, trained and validated on over 10,000 domain images, achieved $R^2 > 0.85$ in predicting the parameters and independently learned physical interdependencies between them. When applied to microscopy data acquired across samples, our model-predicted parameter trends are consistent with independent experimental measurements. These results establish ML-driven techniques as valuable, high-throughput complements to conventional determination of magnetic interactions, and serve to accelerate materials and device development for nanoscale electronics.

cond-mat.mtrl-sci↗

arXiv2023

Quantifying symmetric exchange in ultrathin ferromagnetic films with chirality

The symmetric (Heisenberg) exchange interaction is fundamental to magnetism and assumes critical importance in designing magnetic materials for novel emergent phenomena and device applications. However, quantifying exchange is extremely challenging for ultrathin ($\sim$ 1 nm) magnetic films, as techniques and approximations reliably used for bulk materials are largely inapplicable in the two-dimensional (2D) limit. Here we present and contrast the measurement of exchange stiffness, $A$, by several methods on a series of five Co/Pt-based ultrathin ($1-2$ nm) films. We compare results from (a) spin-wave spectroscopy by Brillouin light scattering (BLS), (b) three analytical models describing the temperature dependence of magnetization obtained by magnetometry, (c) microscopic domain periodicity measurements and simulations, and (d) ab initio density functional theory (DFT) calculations. While different methods present some qualitatively consistent trends across samples, we note, for any given sample, considerable differences (up to $5\times$) in the absolute values of $A$ across the techniques, consistent with discrepancies of $A$ reported in literature for nominally similar samples. We analyze possible sources of the discrepancies across various methods, notably including their relationship to the spin-wave dispersion, and the wave-vector ranges probed. We compare the strengths and limitations of the techniques, and outline directions for their future use in characterizing exchange interactions in ultrathin films.

cond-mat.mtrl-sci↗

arXiv2022

Unveiling the emergent traits of chiral spin textures in magnetic multilayers

Magnetic skyrmions are topologically wound nanoscale textures of spins whose ambient stability and electrical manipulation in multilayer films have led to an explosion of research activities. While past efforts focused predominantly on isolated skyrmions, recently ensembles of chiral spin textures, consisting of skyrmions and magnetic stripes, were shown to possess rich interactions with potential for device applications. However, several fundamental aspects of chiral spin texture phenomenology remain to be elucidated, including their domain wall structure, thermodynamic stability, and morphological transitions. Here we unveil the evolution of these textural characteristics on a tunable multilayer platform - wherein chiral interactions governing spin texture energetics can be widely varied - using a combination of full-field electron and soft X-ray microscopies with numerical simulations. With increasing chiral interactions, we demonstrate the emergence of Néel helicity, followed by a marked reduction in domain compressibility, and finally a transformation in the skyrmion formation mechanism. Together with an analytical model, these experiments establish a comprehensive microscopic framework for investigating and tailoring chiral spin texture character in multilayer films.

cond-mat.mes-hall↗

arXiv2021

Tuning Dzyaloshinskii-Moriya Interaction in Ferrimagnetic GdCo: A First Principles Approach

We present a systematic analysis of our ability to tune chiral Dzyaloshinskii-Moriya Interactions (DMI) in compensated ferrimagnetic Pt/GdCo/Pt1-xWx trilayers by cap layer composition. Using first principles calculations, we show that the DMI increases rapidly for only ~ 10% W and saturates thereafter, in agreement with experiments. The calculated DMI shows a spread in values around the experimental mean, depending on the atomic configuration of the cap layer interface. The saturation is attributed to the vanishing of spin orbit coupling energy at the cap layer and the simultaneous constancy at the bottom interface. Additionally, we predict the DMI in Pt/GdCo/X (X=Ta, W, Ir) and find that W in the cap layer favors a higher DMI than Ta and Ir that can be attributed to the difference in d-band alignment around the Fermi level. Our results open up exciting combinatorial possibilities for controlling the DMI in ferrimagnets towards nucleating and manipulating ultrasmall high-speed skyrmions.

cond-mat.mtrl-sci↗

arXiv2017

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping and contact resistance are not well known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts. In sharp contrast to directly Co contacted p-type BP devices, we observe strong n-type conduction upon insertion of the h-BN at the Co/BP interface. First principles calculations show that this difference arises from the much larger interface dipole at the Co/h-BN interface compared to the Co/BP interface, which reduces the work function of the Co/h-BN contact. The Co/h-BN contacts exhibit low contact resistances (~ 4.5 k-ohm), and are Schottky barrier free. This allows us to probe high electron mobilities (4,200 cm2/Vs) and observe insulator-metal transitions even under two-terminal measurement geometry.

cond-mat.mes-hall↗

arXiv2017

Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces

Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus surface-contacted ferromagnetic metal-graphene interfaces (i.e. nickel- and cobalt-graphene interfaces) using both single-layer and few-layer graphene. Good qualitative agreement is obtained between theory and experiment. In particular, in both theory and experiment, we observe that the contact resistance of edge-contacted ferromagnetic metal-graphene interfaces is much lower than that of surface-contacted ones, for all devices studied and especially for the single-layer graphene systems. We show that this difference in resistance is not due to differences in the metal-graphene coupling strength, which we quantify using Hamiltonian matrix elements. Instead, the larger contact resistance in surface contacts results from spin filtering at the interface, in contrast to the edge-contacted case where both spins are transmitted. Temperature-dependent resistance measurements beyond the Curie temperature TC show that the spin degree of freedom is indeed important for the experimentally measured contact resistance. These results show that it is possible to induce a large change in contact resistance by changing the temperature in the vicinity of TC, thus paving the way for temperature-controlled switches based on spin.

cond-mat.mtrl-sci↗

arXiv2014

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 ohm-um. The substantial contact enhancement (~2 orders of magnitude) as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enhances tunneling between nickel and graphene. To this end, the successful fabrication of a clean graphene-MoS2 interface and a low resistance nickel-graphene interface is critical for the experimentally measured low contact resistance. The potential of using graphene as an electrode interlayer demonstrated in this work paves the way towards achieving high performance next-generation transistors.

cond-mat.mes-hall↗