arXiv subjects

Kidus Guye

Publications and source records attributed to Kidus Guye.

3 recordsLinked to original sources

arXiv2026

Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices

Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for enabling such high-frequency RF technologies. However, the widespread adoption of AlGaN-based RF devices is limited by thermal-management challenges arising from the intrinsically low thermal conductivity of AlGaN, which leads to higher device thermal resistance for a given geometry compared to GaN RF devices. As a result, these next-generation devices are highly susceptible to self-heating. This study investigates the thermal behavior of UWBG AlGaN devices, focusing on the effects of AlGaN channel thickness, substrate technology, and high-k material integration on reducing device thermal resistance to enable high-power operation. Experimental results demonstrate a record-low thermal resistance of 3.96 mm$\cdot$K/W when an AlN substrate is employed and the AlGaN channel thickness is reduced to 5 nm. These findings provide valuable insights into mitigating thermal limitations in UWBG devices through device-level engineering and the strategic integration of high-k materials.

physics.app-ph↗

arXiv2025

Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer

We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing thermal resistance. We use polarization-graded AlGaN layers and ultra-thin pseudomorphic AlGaN buffer layers to enable low thermal resistance and excellent structural quality. The polarization-graded field effect transistors (PolFETs) demonstrated here show Imax over 800mA/mm and current/power gain cutoff frequency (fT/fmax) of 26/28 GHz. Small signal modeling and analysis were used to determine parasitic/transit delays, and gate-resistance thermometry was implemented to thermally characterize AlGaN PolFET and benchmark against state-of-the-art AlGaN HEMTs. The ultra-thin AlGaN PolFET showed thermal resistance of 12 K.mm/W, representing a significant reduction from typical AlGaN transistors. These results show state-of-art combination of high current density, excellent fT-LG product for ultra-wide bandgap AlGaN transistors, and superior thermal performance, and highlight the promise of AlGaN transistors for future RF and mm-wave applications.

physics.app-ph↗

arXiv2022

Nonlinear Programming Solvers for Unconstrained and Constrained Optimization Problems: a Benchmark Analysis

In this paper we propose a set of guidelines to select a solver for the solution of nonlinear programming problems. With this in mind, we present a comparison of the convergence performances of commonly used solvers for both unconstrained and constrained nonlinear programming problems. The comparison involves accuracy, convergence rate, and convergence speed. Because of its popularity among research teams in academia and industry, MATLAB is used as common implementation platform for the solvers. Our study includes solvers which are either freely available, or require a license, or are fully described in literature. In addition, we differentiate solvers if they allow the selection of different optimal search methods. As result, we examine the performances of 23 algorithms to solve 60 benchmark problems. To enrich our analysis, we will describe how, and to what extent, convergence speed and accuracy can be improved by changing the inner settings of each solver.

math.OC↗