arXiv subjects

Kim-Khuong Huynh

Publications and source records attributed to Kim-Khuong Huynh.

9 recordsLinked to original sources

arXiv2026

$\mathcal{PT}$-symmetry as Effective Time Reversal Symmetry for Anderson Localization in a Collinear Antiferromagnet

We show that $\mathcal{PT}$-symmetry acts as the effective time-reversal symmetry governing Anderson localization in the antiferromagnet BaMn$_2$Bi$_2$, whereas the general time-reversal symmetry is broken by its long-range magnetic order. The magnetoconductance follows the laws established from breaking time-reversal symmetry throuhg the orbital coupling of charge carriers to the magnet vector potential, however, the degrees of symmetry breaking are qualitatively modulated by the magnetocrystalline anisotropy stabilizing $\mathcal{PT}$-related sublattices. The quantum interferences and hoping amplitudes governing the phenomena are drastically impaired by transverse magnetic fields, which readily cant $\mathcal{PT}$-related magnetic sublattices. Accordingly, when the $\mathcal{PT}$-related texture is weakly perturbed by longitudinal fields orienting along the sublattices, the localization is minutely affected. The robustness of the $\mathcal{PT}$-enforced degeneracies is thus governed by exchange and magnetocrystalline interactions, in contrast to the exact $\mathcal{PT}$-symmetry of the full Hamiltonian, which is broken by any finite field.

cond-mat.other↗

arXiv2026

Flat band in the multibandmetal MnSb$_2$

We report the realization of a metallic flat band in the marcasite compound MnSb$_2$. The material was synthesized under high pressure, and its crystal structure was established by X-ray diffraction. Electrical and thermoelectric transport measurements reveal signatures of a flat band near the Fermi level that persist across three structural, magnetic, and electronic transitions. These observations are supported by extensive density-functional-theory calculations. Related marcasite diantimonides, including FeSb$_2$ and CrSb$_2$, also host flat bands, but these lie far from the Fermi level and therefore do not produce a metallic flat-band state. MnSb$_2$ therefore emerges as the only known metallic marcasite antimonide in which a flat band lies in the vicinity of the Fermi level.

cond-mat.str-el↗

arXiv2026

Intrinsic single crystals of MnTe altermagnet

We report the synthesis methodology, structure, and intrinsic properties of ultra-high quality single crystals of MnTe, an archetypal altermagnet. The crystals, obtained from self-flux method, are nearly free from crystal imperfections and disproportionate chemical compositions as seen by various investigation methods. In measurements under quasi free-standing configuration minimizing stress induced effects, the crystals exhibit complex and anisotropic domain kinetics in both superheating and supercooling regimes around the altermagnetic transition at $T_{\mathrm{N}} = 310\,\mathrm{K}$. An Anderson insulating state is observed below $T_{\mathrm{MI}}\approx 150\,\mathrm{K}$ with a carrier density of about $1.6\times 10^{17}\,\mathrm{cm}^{-3}$, being sharply contrast to metallic states usually seen in Te-deficit samples. Nevertheless, hallmarks of altermagnetism, anomalous Hall effect and X-ray magnetic circular dichroism signal, are robust in this intrinsic limit, however with significantly reduced magnitudes.

cond-mat.str-el↗

arXiv2025

Intrinsic physical properties of flexible van der Waals semiconductor InSe

InSe is a van der Waals semiconductor in which mechanical flexibility, high electronic mobility, and non-trivial electronic structures converge, making it an attractive platform for both intriguing fundamental studies and promising device developments. However, the nucleation and growth of phase-pure, intrinsic InSe crystals require stringent thermodynamical conditions, and have therefore remained elusive. Since InSe melts incongruently, the widely used synthesis methods based on cooling of a 1:1 In-Se mixture will produce either aggregates of multiphase crystallites or uncontrolled In-rich, heavily electron-doped InSe. This fundamental thermodynamic constraint provides a compelling explanation for the large discrepancies observed in the reported physical properties of InSe. We overcome these limitations by utilizing the traveling solvent floating zone (TSFZ) method to produce high quality, centimeter-size InSe single crystals. Electrical, thermal, and thermoelectric transport measurements demonstrate that TSFZ-InSe single crystals closely approach the intrinsic limit, establishing it as a benchmark material for the future studies of this important material.

cond-mat.mtrl-sci↗

arXiv2025

Frustrated vacancy ordering creates novel quantum properties in Kutinaite, $\mathrm{Ag}_{6}\mathrm{Cu}_{14.4}\mathrm{As}_7$

Ideal crystals are fully ordered, but real-world crystals always contain defects breaking translational symmetry. Random defects in crystals have important implications and they e.g. provide the foundation for semiconductor-based electronic devices. Structurally correlated defects introduce an additional level of complexity, which may lead to novel materials properties, but rationalization of relations between correlated disorder and the emergent material properties are very rare. Here we report that the defect structure of the mineral Kutinaite, Ag6Cu14.4As7, exhibits unprecedented metallic diamagnetism, a hallmark of non-trivial electronic states that require delicate symmetrical protection. Using a combination of X-ray scattering methodologies, simulations, and physical property measurements, we deduced and verified subtle frustrated vacancy ordering of the Cu sublattice when cooling crystals below ~300 K. The vacancy frustration in Kutinaite leads to unique quantum properties, and our study calls for a reconsideration of the role of vacancies as quasi-chemical species in crystals.

cond-mat.dis-nn↗

arXiv2024

Structural origins of ultra-low glass-like thermal conductivity in AgGaGe3Se8

Materials with a low thermal conductivity are important for a variety of applications such as thermal barrier coatings and thermoelectrics, and understanding the underlying mechanisms of low heat transport, and relating them to structural features, remains a central goal within material science. Here, we report on the ultra-low thermal conductivity of the quarternary silver chalcogenide AgGaGe3Se8 with a remarkable value of only 0.2 Wm-1K-1 at room temperature, and an unusual glass-like thermal behavior from 2 K to 700 K. The ultra-low thermal conductivity is linked to a disordered nature of Ag in the structure, displaying extremely large Ag atomic displacement parameters obtained from multi-temperature synchrotron powder X-ray scattering measurements, and Ag ionic conductivity at elevated temperatures. Additionally, signs of structural anharmonicity and soft bonding are evident from a low temperature Boson peak in the heat capacity and a low Debye temperature of 147 K.

cond-mat.mtrl-sci↗

arXiv2022

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated $3d$-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the $d_{xy}$-derived band dominate the transport properties and exhibit the Anderson localization, whereas other $3d$ bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.

cond-mat.str-el↗

arXiv2021

Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet

A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn$_2$Bi$_2$ to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above $2\,\mathrm{K}$. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn$_2$Bi$_2$.

cond-mat.str-el↗

arXiv2018

Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances

We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn$_{2}$Pn$_{2}$ antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced by $60$ times in magnetic fields ($\vec{H}$'s), thus yielding the GMR of about $-98\%$. The GMR changes systematically along with the Pn elements, hinting that its origin is the spin orbit coupling (SOC) and/or $d$-$p$ orbital hybridization. A positive MR component emerging on top of the negative GMR at low temperatures suggests an orbital-sensitive magnetotransport as $\vec{H}$ suppresses the conduction of the electron-like carriers in the $d$-like band but enhances those of hole-like ones in the $d$-$p$ hybridized band. The anisotropy of the GMR reveals that the electrical conductivity is extremely sensitive to the minute changes in the direction of the antiferromagnetic moments induced by the parity-time breaking $\vec{H}$, which seems to be associated with a magnetoelectric effect in the dynamic regime of conduction electrons. We attribute the observed GMR to the non-trivial low energy band of BMPn's, which is governed by the parity-time symmetry and an magnetic hexadecapole ordering.

cond-mat.str-el↗