arXiv subjects

Kin Fai Mak

Publications and source records attributed to Kin Fai Mak.

At least 55 records · Page 3Linked to original sources

arXiv2023

Optical readout of the chemical potential of two-dimensional electrons

The chemical potential u of an electron system is a fundamental property of a solid. A precise measurement of u plays a crucial role in understanding the electron interaction and quantum states of matter. However, thermodynamics measurements in micro and nanoscale samples are challenging because of the small sample volume and large background signals. Here, we report an optical readout technique for u of an arbitrary two-dimensional (2D) material. A monolayer semiconductor sensor is capacitively coupled to the sample. The sensor optical response determines a bias that fixes its chemical potential to the band edge and directly reads u of the sample. We demonstrate the technique in AB-stacked MoTe2/WSe2 moire bilayers. We obtain u with DC sensitivity about 20 ueV/sqrt(Hz), and the compressibility and interlayer electric polarization using AC readout. The results reveal a correlated insulating state at the doping density of one hole per moire unit cell, which evolves from a Mott to a charge-transfer insulator with increasing out-of-plane electric field. Furthermore, we image u and quantify the spatial inhomogeneity of the sample. Our work opens the door for high spatial and temporal resolution measurements of the thermodynamic properties of 2D quantum materials.

cond-mat.mes-hall↗

arXiv2023

Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers

The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit coupling. In general, stronger spin-orbit coupling favors larger SHEs but shorter spin relaxation times and diffusion lengths. To achieve both large SHEs and long-range spin transport in a single material has remained a challenge. Here we demonstrate a giant intrinsic SHE in AB-stacked MoTe2/WSe2 moiré bilayers by direct magneto optical imaging. Under moderate electrical currents with density < 1 A/m, we observe spin accumulation on transverse sample edges that nearly saturates the spin density. We also demonstrate long-range spin Hall transport and efficient non-local spin accumulation limited only by the device size (about 10 um). The gate dependence shows that the giant SHE occurs only near the Chern insulating state, and at low temperatures, it emerges after the quantum anomalous Hall breakdown. Our results demonstrate moiré engineering of Berry curvature and large SHEs for potential spintronics applications.

cond-mat.mes-hall↗

arXiv2023

Quantum Transport in Graphene Using Surface Acoustic Wave Resonators

Surface acoustic waves (SAWs) provide a contactless method for measuring the wavevector-dependent conductivity. This technique has been used to discover emergent length scales in the fractional quantum Hall regime of traditional, semiconductor-based heterostructures. SAWs would appear to be an ideal match for van der Waals (vdW) heterostructures, but the right combination of substrate and experimental geometry to allow access to the quantum transport regime has not yet been found. We demonstrate that SAW resonant cavities fabricated on LiNbO$_3$ substrates can be used to access the quantum Hall regime of high-mobility, hexagonal boron nitride (hBN) encapsulated graphene heterostructures. Our work establishes SAW resonant cavities as a viable platform for performing contactless conductivity measurements in the quantum transport regime of vdW materials.

cond-mat.mes-hall↗

arXiv2022

Gate-tunable heavy fermions in a moiré Kondo lattice

The Kondo lattice, describing a matrix of local magnetic moments coupled via spin-exchange interactions to itinerant conduction electrons, is a prototype of strongly correlated quantum matter. Traditionally, Kondo lattices are realized in intermetallic compounds containing lanthanide or actinide. The complex electronic structure and limited tunability of both the electron density and exchange interactions in these bulk materials pose significant challenges to study Kondo lattice physics. Here, we report the realization of a synthetic Kondo lattice in AB-stacked MoTe2/WSe2 moiré bilayers, where the MoTe2 layer is tuned to a Mott insulating state, supporting a triangular moiré lattice of local moments, and the WSe2 layer is doped with itinerant conduction carriers. We observe heavy fermions with a large Fermi surface below the Kondo temperature. We also observe destruction of the heavy fermions by an external magnetic field with an abrupt decrease of the Fermi surface size and quasiparticle mass. We further demonstrate widely and continuously gate-tunable Kondo temperatures through either the itinerant carrier density or Kondo interaction. Our study opens the possibility of in-situ access to the rich phase diagram of the Kondo lattice with exotic quantum criticalities in a single device based on semiconductor moiré materials

cond-mat.str-el↗

arXiv2022

Switchable moiré potentials in ferroelectric WTe2/WSe2 superlattices

Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and moiré band insulating states and the associated nonlinear anomalous Hall effect by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centered-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, which possess very different moiré potential depths; ferroelectric switching thus turns on/off the superlattice. Our study demonstrates the potential of creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.

cond-mat.mes-hall↗

arXiv2022

Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show surprisingly that the newly discovered QAH state in AB-stacked MoTe2/WSe2 moiré bilayers is not valley-polarized but valley-coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (anti-aligned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states.

cond-mat.mes-hall↗

arXiv2022

Realization of the Haldane Chern insulator in a moiré lattice

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe2/WSe2 moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall (QSH) insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley--one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

cond-mat.mes-hall↗

arXiv2022

Exciton density waves in Coulomb-coupled dual moiré lattices

Strongly correlated bosons in a lattice are a platform to realize rich bosonic states of matter and quantum phase transitions. While strongly correlated bosons in a lattice have been studied in cold-atom experiments, their realization in a solid-state system has remained challenging. Here we trap interlayer excitons--bosons composed of bound electron-hole pairs--in a lattice provided by an angle-aligned WS2/bilayer WSe2/WS2 multilayer; the heterostructure supports Coulomb-coupled triangular moiré lattices of nearly identical period at the top and bottom interfaces. We observe correlated insulating states when the combined electron filling factor of the two lattices, with arbitrary partitions, equals to 1/3,2/3,4/3 and 5/3. These new states can be interpreted as exciton density waves in a Bose-Fermi mixture of excitons and holes. Because of the strong repulsive interactions between the constituents, the holes form robust generalized Wigner crystals , which restrict the exciton fluid to channels that spontaneously break the translational symmetry of the lattice. Our results demonstrate that Coulomb-coupled moiré lattices are fertile ground for correlated many-boson phenomena.

cond-mat.mes-hall↗

arXiv2022

Intrinsic spin Hall torque in a moire Chern magnet

In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection. For example, spin may be injected by a nonmagnetic layer exhibiting a large spin Hall effect, a phenomenon known as spin-orbit torque. Here, we demonstrate a spin-orbit torque magnetic bit in a single two-dimensional system with intrinsic magnetism and strong Berry curvature. We study AB-stacked MoTe2/WSe2, which hosts a magnetic Chern insulator at a carrier density of one hole per moire superlattice site. We observe hysteretic switching of the resistivity as a function of applied current. Magnetic imaging using a superconducting quantum interference device reveals that current switches correspond to reversals of individual magnetic domains. The real space pattern of domain reversals aligns precisely with spin accumulation measured near the high-Berry curvature Hubbard band edges. This suggests that intrinsic spin- or valley-Hall torques drive the observed current-driven magnetic switching in both MoTe2/WSe2 and other moire materials. The switching current density of 10^3 Amps per square centimeter is significantly less than reported in other platforms paving the way for efficient control of magnetic order.

cond-mat.mes-hall↗

arXiv2022

Frustrated magnetic interactions in a Wigner-Mott insulator

Two-dimensional semiconductor moiré materials have emerged as a highly controllable platform to simulate and explore quantum condensed matter. Compared to real solids, electrons in semiconductor moiré materials are less strongly attracted to the moiré lattice sites, making the nonlocal contributions to the magnetic interactions as important as the Anderson super-exchange. It provides a unique platform to study the effects of competing magnetic interactions. Here, we report the observation of strongly frustrated magnetic interactions in a Wigner-Mott insulating state at 2/3 filling of the moiré lattice in angle-aligned WSe2/WS2 heterobilayers. Magneto-optical measurements show that the net exchange interaction is antiferromagnetic for filling factors below 1 with a strong suppression at 2/3 filling. The suppression is lifted upon screening of the long-range Coulomb interactions and melting of the Wigner-Mott insulator by a nearby metallic gate. The results can be qualitatively captured by a honeycomb-lattice spin model with an antiferromagnetic nearest-neighbor coupling and a ferromagnetic second-neighbor coupling. Our study establishes semiconductor moiré materials as a model system for the lattice-spin physics and frustrated magnetism.

cond-mat.mtrl-sci↗

arXiv2022

Tunable bilayer Hubbard model physics in twisted WSe2

Moiré materials with flat electronic bands provide a highly controllable quantum system for studies of strong-correlation physics and topology. In particular, angle-aligned heterobilayers of semiconducting transition metal dichalcogenides (TMDs) with large band offset realize the single-band Hubbard models. Introduction of a new layer degree of freedom is expected to foster richer interactions, enabling Hund's physics, interlayer exciton condensation and new superconducting pairing mechanisms to name a few. Here, we report competing electronic orders in twisted AB-homobilayer WSe2, which realizes a bilayer Hubbard model in the weak interlayer hopping limit for holes. We characterize the charge order, layer polarization and magnetization of the moiré bilayer, subjected to an out-of-plane electric and magnetic field, by exciton sensing and magneto circular dichroism measurements. By layer-polarizing holes via the electric field, we observe a crossover from an excitonic insulator to a charge-transfer insulator at hole density of $ν$=1 (in unit of moiré density), a transition from a paramagnetic to an antiferromagnetic charge-transfer insulator at $ν$=2, and evidence for a layer-selective Mott insulator at 1<$ν$<2. The unique coupling of charge and spin to external fields also manifests a giant magneto-electric response. Our results establish a new solid-state simulator for problems in strong-correlation physics that are described by bilayer Hubbard models.

cond-mat.str-el↗

arXiv2022

Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice

The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed full electron filling of the moiré superlattice has been reported recently, that at fractional filling, which involves translational symmetry breaking of the underlying superlattice, remains elusive. Here, we demonstrate bandwidth-tuned MITs in a MoSe2/WS2 moiré superlattice at both integer and fractional fillings using the exciton sensing technique. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state, consistent with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a "dielectric catastrophe". Our results support continuous interaction-driven MITs in a two-dimensional triangular lattice and stimulate future explorations of exotic quantum phases, such as quantum spin liquids, in their vicinities.

cond-mat.mtrl-sci↗

arXiv2022

Van der Waals pi Josephson junctions

Proximity-induced superconductivity in a ferromagnet can induce Cooper pairs with a finite center-of-mass momentum. The resultant spatially modulated superconducting order parameter is able to stabilize Josephson junctions (JJs) with pi phase difference in superconductor-ferromagnet heterostructures and realize 'quiet' phase qubits. The emergence of two-dimensional (2D) layered superconducting and magnetic materials promises a new platform for realizing pi JJs with atomically sharp interfaces by van der Waals stacking. Here we demonstrate a thickness-driven 0-pi transition in JJs made of NbSe2 (an Ising superconductor) with a Cr2Ge2Te6 (a ferromagnetic semiconductor) weak link. By systematically varying the Cr2Ge2Te6 thickness, we observe a vanishing supercurrent at a critical thickness around 8 nm, followed by a re-entrant supercurrent upon further increase in thickness. Near the critical thickness, we further observe unusual supercurrent interference patterns with vanishing critical current around zero in-plane magnetic field. They signify the formation of 0-pi JJs (with both 0 and pi regions) likely induced by the nanoscale magnetic domains in Cr2Ge2Te6. Our work highlights the potential of van der Waals superconductor-ferromagnet heterostructures for the explorations of unconventional superconductivity and superconducting electronics.

cond-mat.supr-con↗

arXiv2022

Valley-Polarized Quantum Anomalous Hall State in Moiré MoTe$_2$/WSe$_2$ Heterobilayers

Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ν=2$ (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling $ν=1$ were observed in AB stacked moiré MoTe$_2$/WSe$_2$ heterobilayers. However, how the topologically nontrivial states emerge is not known. In this work, we propose that the pseudo-magnetic fields induced by lattice relaxation in moiré MoTe$_2$/WSe$_2$ heterobilayers could naturally give rise to moiré bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full-filing $ν=2$, when two moiré bands with opposite Chern numbers are filled. At half-filling $ν=1$, Coulomb interaction lifts the valley degeneracy and results in a valley-polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically non-trivial states in heterobilayer TMD materials.

cond-mat.mes-hall↗

arXiv2021

Air Stable and Layer Dependent Ferromagnetism in Atomically Thin van der Waals CrPS$_{4}$

Ferromagnetism in two-dimensional materials presents a promising platform for the development of ultrathin spintronic devices with advanced functionalities. Recently discovered ferromagnetic van der Waals crystals such as CrI$_{3}$, readily isolated two-dimensional crystals, are highly tunable through external fields or structural modifications. However, there remains a challenge because of material instability under air exposure. Here, we report the observation of an air stable and layer dependent ferromagnetic (FM) van der Waals crystal, CrPS$_{4}$, using magneto-optic Kerr effect microscopy. In contrast to the antiferromagnetic (AFM) bulk, the FM out-of-plane spin orientation is found in the monolayer crystal. Furthermore, alternating AFM and FM properties observed in even and odd layers suggest robust antiferromagnetic exchange interactions between layers. The observed ferromagnetism in these crystals remains resilient even after the air exposure of about a day, providing possibilities for the practical applications of van der Waals spintronics.

cond-mat.mes-hall↗

arXiv2021

Dipolar excitonic insulator in a moire lattice

Two-dimensional (2D) moire materials provide a new solid-state platform with unprecedented controllability for studies of correlated quantum phenomena. To date, experimental studies have focused on the correlated electronic states; the correlated bosonic states in moire materials have remained practically unexplored. Here, we report a correlated dipolar excitonic insulator, a charge insulating state driven by the formation of excitons, in a Coulomb-coupled WSe2 monolayer and WSe2/WS2 moire bilayer at total hole doping density equal to the moire density. The system is a Mott insulator when all the holes reside in the moire layer. Under an out-of-plane electric field, the holes can be continuously transferred to the WSe2 monolayer, but remain strongly bound to the empty moire sites; they form an interlayer exciton fluid in the moire superlattice under a particle-hole transformation. We identify the phase space and determine the charge gap energy of the excitonic insulating state by optical spectroscopy and capacitance measurements, respectively. We further observe the emergence of local magnetic moments in the WSe2 monolayer induced by the strong interlayer Coulomb correlation. Our demonstration of an exciton fluid in a lattice paves the path for realizing correlated bosonic quantum phenomena described by the Bose-Hubbard model in a solid-state system.

cond-mat.str-el↗

arXiv2021

Quantum oscillations in 2D insulators induced by graphite gates

We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different two-dimensional systems, including mono- and bilayer Td-WTe2, angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry. We find that the resistivity of the 2D system generically shows quantum oscillations as a function of magnetic field corresponding to a high-density Fermi surface when they are tuned near an insulating state, in contravention of naïve band theory. Simultaneous measurement of the resistivity of the graphite gates show that these oscillations are precisely correlated with quantum oscillations in the resistivity of the graphite gates themselves. Further supporting this connection, the oscillations are quenched when the graphite gate is replaced by TaSe2, a high-density metal that does not show quantum oscillations. The observed phenomenon arises from the oscillatory behavior of graphite density of states, which modulates the device capacitance and, as a consequence, the carrier density in the sample layer even when a constant electrochemical potential is maintained between the sample and the gate electrode. Oscillations are most pronounced near insulating states where the resistivity is strongly density dependent. Our study suggests a unified mechanism for quantum oscillations in graphite-gated 2D insulators based on sample-gate coupling.

cond-mat.mes-hall↗

arXiv2021

Quantum anomalous Hall effect from intertwined moiré bands

Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moiré materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the Mott insulator, generalized Wigner crystals, stripe phases and continuous Mott transition, have been demonstrated. However, nontrivial band topology has remained elusive. Here we report the observation of a quantum anomalous Hall (QAH) effect in AB-stacked MoTe2/WSe2 moiré heterobilayers. Unlike in the AA-stacked structures, an out-of-plane electric field controls not only the bandwidth but also the band topology by intertwining moiré bands centered at different high-symmetry stacking sites. At half band filling, corresponding to one particle per moiré unit cell, we observe quantized Hall resistance, h/e2 (with h and e denoting the Planck's constant and electron charge, respectively), and vanishing longitudinal resistance at zero magnetic field. The electric-field-induced topological phase transition from a Mott insulator to a QAH insulator precedes an insulator-to-metal transition; contrary to most known topological phase transitions, it is not accompanied by a bulk charge gap closure. Our study paves the path for discovery of a wealth of emergent phenomena arising from the combined influence of strong correlation and topology in semiconductor moiré materials.

cond-mat.mes-hall↗