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Kin Wong

Publications and source records attributed to Kin Wong.

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In-Plane Field induced Quantized Longitudinal Conductivity in Magnetic Topological Insulators

We report the discovery of an in plane quantization (IPQ) state in trilayer magnetic topological insulators, characterized by a quantized longitudinal conductivity of e2/h under strong in-plane magnetic fields. This state emerges at a quantum critical point separating quantum anomalous Hall phases tuned by field angle and orientation, directly linking gap-closing behavior to quantized criticality. Temperature and gate dependent transport measurements, supported by a self consistent approximation model, reveal that electron hole puddles dominate charge transport in this regime, highlighting the essential role of impurity disorder in stabilizing quantized critical transport. These findings establish a tunable experimental framework that connects gap-closing physics with universal conductivity, offering both microscopic insight into critical transport in magnetic topological insulators and a robust platform for probing quantum criticality in topological systems.

cond-mat.mes-hall

Spintronic Bayesian Hardware Driven by Stochastic Magnetic Domain Wall Dynamics

As artificial intelligence (AI) advances into diverse applications, ensuring reliability of AI models is increasingly critical. Conventional neural networks offer strong predictive capabilities but produce deterministic outputs without inherent uncertainty estimation, limiting their reliability in safety-critical domains. Probabilistic neural networks (PNNs), which introduce randomness, have emerged as a powerful approach for enabling intrinsic uncertainty quantification. However, traditional CMOS architectures are inherently designed for deterministic operation and actively suppress intrinsic randomness. This poses a fundamental challenge for implementing PNNs, as probabilistic processing introduces significant computational overhead. To address this challenge, we introduce a Magnetic Probabilistic Computing (MPC) platform-an energy-efficient, scalable hardware accelerator that leverages intrinsic magnetic stochasticity for uncertainty-aware computing. This physics-driven strategy utilizes spintronic systems based on magnetic domain walls (DWs) and their dynamics to establish a new paradigm of physical probabilistic computing for AI. The MPC platform integrates three key mechanisms: thermally induced DW stochasticity, voltage controlled magnetic anisotropy (VCMA), and tunneling magnetoresistance (TMR), enabling fully electrical and tunable probabilistic functionality at the device level. As a representative demonstration, we implement a Bayesian Neural Network (BNN) inference structure and validate its functionality on CIFAR-10 classification tasks. Compared to standard 28nm CMOS implementations, our approach achieves a seven orders of magnitude improvement in the overall figure of merit, with substantial gains in area efficiency, energy consumption, and speed. These results underscore the MPC platform's potential to enable reliable and trustworthy physical AI systems.

physics.app-ph

Unraveling the nature of quasi van der Waals Epitaxy of magnetic topological insulators Cr: (BixSb1-x)2Te3 on a GaAs (111) substrate through coherently strained interface

Quasi van der Waals Epitaxy (qvdWE) has been realized for decades at the interfaces between 3D and 2D materials or van der Waals materials. The growth of magnetic topological insulators (MTI) Cr: (BixSb1-x)2Te3 (CBST) on GaAs (111) substrates for Quantum Anomalous Hall Effect (QAH) is actually one of the examples of qvdWE, which is not well noticed despite the fact that its advantages have been used in growth of various MTI materials. This is distinguished from the growth of MTIs on other substrates. Although the qvdWE mode has been used in many 2D growth on III-V substrates, the specific features and mechanisms are not well demonstrated and summarized yet. Here in this work, we have for the first time shown the features of both coherent interfaces and the existence of strain originating from qvdWE at the same time.

cond-mat.mtrl-sci

Distinguishing two-component anomalous Hall effect from topological Hall effect

In transport, the topological Hall effect (THE) presents itself as non-monotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when anomalous Hall effect (AHE) is also present, the co-existence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE", or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE+AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: 1. Minor loops, 2. Temperature dependence, 3. Gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". Besides, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the non-monotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise cautions and use these methods to examine carefully in order to ascertain genuine THE.

cond-mat.mtrl-sci

Chiral symmetry breaking for deterministic switching of perpendicular magnetization by spin-orbit torque

Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, non-collinear spin textures are formed by the gradient of effective SOT strength, and thus the chiral symmetry of the SOT-induced spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties, as a practical solution for the wafer-scale manufacture of SOT devices.

cond-mat.mes-hall

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.

cond-mat.mtrl-sci

Work functions, ionization potentials, and in-between: Scaling relations based on the image charge model

We revisit a model in which the ionization energy of a metal particle is associated with the work done by the image charge force in moving the electron from infinity to a small cut-off distance just outside the surface. We show that this model can be compactly, and productively, employed to study the size dependence of electron removal energies over the range encompassing bulk surfaces, finite clusters, and individual atoms. It accounts in a straightforward manner for the empirically known correlation between the atomic ionization potential (IP) and the metal work function (WF), IP/WF$\sim$2. We formulate simple expressions for the model parameters, requiring only a single property (the atomic polarizability or the nearest neighbor distance) as input. Without any additional adjustable parameters, the model yields both the IP and the WF within $\sim$10% for all metallic elements, as well as matches the size evolution of the ionization potentials of finite metal clusters for a large fraction of the experimental data. The parametrization takes advantage of a remarkably constant numerical correlation between the nearest-neighbor distance in a crystal, the cube root of the atomic polarizability, and the image force cutoff length. The paper also includes an analytical derivation of the relation of the outer radius of a cluster of close-packed spheres to its geometric structure.

physics.atm-clus