arXiv subjects

Kirk Baldwin

Publications and source records attributed to Kirk Baldwin.

22 records · Page 2Linked to original sources

arXiv2020

Quasi-condensation of bilayer excitons in a periodic potential

We study two-dimensional excitons confined in a lattice potential, for high fillings of the lattice sites. We show that a quasi-condensate is possibly formed for small values of the lattice depth, but for larger ones the critical phase-space density for quasi-condensation rapidly exceeds our experimental reach, due to the increase of the excitons effective mass. On the other hand, in the regime of a deep lattice potential where excitons are strongly localised at the lattice sites, we show that an array of phase-independent quasi-condensates, different from a Mott insulating phase, is realised.

cond-mat.quant-gas↗

arXiv2017

Parafermion supporting platform based on spin transitions in the fractional quantum Hall effect regime

We propose an experimentally-feasible system based on spin transitions in the fractional quantum Hall effect regime where parafermions, high-order non-abelian excitations, can be potentially realized. We provide a proof-of-concept experiments showing that in specially designed heterostructures spin transitions at a filling factor 2/3 can be induced electrostatically, allowing local control of polarization and on-demand formation of helical domain walls with fractionalized charge excitations, a pre-requisite ingredient for parafermions formation. We also present exact diagonalization numerical studies of domain walls formed between domains with different spin polarization in the fractional quantum Hall effect regime and show that they indeed possess electronic and magnetic structure needed for parafermion formation when coupled to an s-wave superconductor.

cond-mat.mes-hall↗

arXiv2014

Fabrication of Electronic Fabry-Perot Interferometer in the Quantum Hall Regime

A fabrication method for electronic quantum Hall Fabry-Perot interferometers (FPI) is presented. Our method uses a combination of e-beam lithography and low-damage dry-etching to produce the FPIs and minimize the excitation of charged traps or deposition of impurities near the device. Optimization of the quantum point contacts (QPC) is achieved via systematically varying the etch depth and monitoring the device resistance between segmented etching sessions. The etching is stopped when a desired value of resistance is obtained. Finer control of interference trajectories is obtained by the gate metallized inside the etched area by e-beam evaporation. Our approach allows for a control of the delicate potential bending near the quantum well by tuning the confining potential of the quantum point contacts.

cond-mat.mes-hall↗

arXiv2004

Tunneling between Two Quantum Hall Droplets

We report on tunneling experiment between two quantum Hall droplets separated by a nearly ideal tunnel barrier. The device is produced by cleaved edge overgrowth that laterally juxtaposes two two-dimensional electron systems across a high quality semiconductor barrier. The dramatic evolution of the tunneling characteristics is consistent with the magnetic field-dependent tunneling between the coupled edge states of the quantum Hall droplets. We identify a series of quantum critical points between successive strong and weak tunneling regimes that are reminiscent of the plateau-transitions in quantum Hall effect. Scaling analysis shows that the conductance near the critical magnetic fields $B_{c}$ is a function of a single scaling argument $|B-B_{c}|T^{-κ}$, where the exponent $κ= 0.42$. This puzzling resemblance to a quantum Hall-insulator transition points to the significance of interedge correlation in the lateral tunneling of quantum Hall droplets.

cond-mat.mes-hall↗