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Kisara Matsumoto

Publications and source records attributed to Kisara Matsumoto.

2 recordsLinked to original sources

Determination of Burgers-vector directions of threading edge dislocations in GaN by phase-contrast microscopy

Phase-contrast microscopy enables rapid, nondestructive observation of threading dislocations in GaN, but the relationship between dislocation contrast and the Burgers vector has not been established. Here, we demonstrate that the in-plane Burgers-vector direction of threading edge dislocations in GaN can be determined from the arrangement of bright and dark contrast in phase-contrast microscopy images. The relationship was first established for threading edge dislocations in ammonothermal GaN whose Burgers vectors were independently determined by X-ray topography and was subsequently applied to hydride vapor phase epitaxy-grown GaN. The Burgers vector predicted from the phase contrast was verified by weak-beam dark-field TEM and large-angle convergent-beam electron diffraction. For the threading edge dislocations examined, the direction obtained by rotating the direction from the minimum of the dark contrast to the maximum of the bright contrast by 90° counterclockwise coincided with the Burgers-vector direction. Analysis based on the photoelastic effect further suggests that the phase contrast primarily reflects the sum of the two in-plane normal strain components, εxx + εyy, around the dislocation. These results demonstrate that phase-contrast microscopy can be used as a nondestructive optical method for determining the in-plane Burgers-vector direction of threading edge dislocations in GaN.

cond-mat.mtrl-sci↗

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

We demonstrate high-throughput three-dimensional imaging of threading dislocations in ammonothermal GaN wafers using polarized-light microscopy with collimated LED illumination. Threading dislocations exhibited focal-depth-dependent in-plane shifts, enabling visualization of their three-dimensional inclination behavior over large areas. Synchrotron radiation X-ray topography indicated that dislocations with identical in-plane Burgers vector components tended to exhibit similar trace geometries and inclination directions. The threading dislocations were found to be tilted by approximately 3.3° from the c-axis in directions perpendicular to their Burgers vectors, indicating climb-mediated motion associated with strain relaxation during crystal growth. These results demonstrate a simple nondestructive approach for large-area three-dimensional characterization of dislocations in GaN wafers.

cond-mat.mtrl-sci↗