arXiv subjects

Kiyoung Ko

Publications and source records attributed to Kiyoung Ko.

2 recordsLinked to original sources

arXiv2026

Ultra-broadband integrated optical parametric amplifier for quantum sensing

Although thin-film lithium niobate (TFLN) facilitates efficient signal generation and nonlinear and quantum interactions, the realization of optical parametric amplification (OPA) that can provide simultaneous ultra-broadband and high-gain operation in an integrated chip continues to pose a challenge. Here we demonstrate continuous-wave-pumped OPA in an X-cut MgO-doped, dispersion-engineered, and adaptively-poled TFLN waveguide of 1.6 cm length, achieving a flat-top profile covering a 450 nm-wide optical wavelength window, corresponding to a 3-dB gain bandwidth of about 56 THz. Among reported TFLN platforms, our device exhibits the broadest 3-dB gain bandwidth. The same device can be pumped either directly at visible wavelengths through second-order x(2) interactions or in the telecom band through cascaded x(2) processes, the latter eliminating the need for a high-power visible pump laser. We achieve maximum gains of 8.87 +- 0.39 dB and 10.79 +- 0.43 dB at on-chip pump powers of 74 mW and 170 mW for the direct and cascaded schemes, respectively. We further directly probe OPA gain across the 1650-1900 nm wavelength range, where experimental gain measurements have remained scarce. With a normalized on-chip gain of 1.21 dB per W per mm, our device sets a new benchmark among reported cascaded x(2) nonlinear processes. This work advances the realization of integrated optical parametric amplifiers, offering high efficiency, robust gain, ultra-broadband bandwidth, and continuous-wave operation, thereby enabling new capabilities for next-generation quantum sensing and photonic systems.

physics.optics↗

arXiv2024

A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators

Ultra-high-Q optical resonators have facilitated recent advancements in on-chip photonics by effectively harnessing nonlinear phenomena providing useful functionalities. While these breakthroughs, primarily focused on the near-infrared region, have extended interest to longer wavelengths holding importance for monitoring and manipulating molecules, the absence of ultra-high-Q resonators in this region remains a significant challenge. Here, we have developed on-chip microresonators with a remarkable Q-factor of 38 million, surpassing previous mid-infrared records by over 30 times. Employing innovative fabrication techniques, including the spontaneous formation of light-guiding geometries during material deposition, resonators with internal multilayer structures have been seamlessly created and passivated with chalcogenide glasses within a single chamber. Major loss factors, especially airborne-chemical absorption, were thoroughly investigated and mitigated by extensive optimization of resonator geometries and fabrication procedures. This allowed us to access the fundamental loss performance offered by doubly purified chalcogenide glass sources, as demonstrated in their fiber form. Exploiting this ultra-high-Q resonator, we successfully demonstrated Brillouin lasing on a chip for the first time in the mid-infrared, with a threshold power of 91.9 {\mu}W and a theoretical Schawlow-Townes linewidth of 83.45 Hz, far surpassing carrier phase noise. Our results showcase the effective integration of cavity-enhanced optical nonlinearities into on-chip mid-infrared photonics.

physics.optics↗