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Klaus Biermann

Publications and source records attributed to Klaus Biermann.

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GHz control of THz QCL band structure and gain by standing acoustic strain

Active frequency comb generation and waveform control are central challenges in the terahertz (THz) domain. In THz quantum cascade lasers (QCLs), these functions have typically been achieved through active bias modulation, which alters the operating point of the device and imposes severe limitations on its flexibility. To address these challenges, we propose an approach based on the direct modulation of the QCL bandstructure using GHz-frequency standing bulk acoustic waves (BAWs), promising direct and localized control of the optical gain and chromatic dispersion. To this end, we fabricated a bulk acoustic transducer on top of a THz QCL in order to excite GHz standing BAWs within its active region. We demonstrate that radio-frequency driving of the transducer leads to the tunable generation of standing BAWs in 5-12 GHz frequency range with wavelengths commensurate to the QCL period length. The effect of the BAW on the QCL bandstructure is revealed by measuring photoluminescence (PL) of the active region, where the BAW strain leads to a considerable modulation of the PL energy up to a few meV around its non-modulated value. We also develop a model and perform bandstructure simulations to predict the effect of the BAW on the QCL subband structure and gain. These results mark the first demonstration of dynamic bandstructure modulation in a THz QCL using GHz acoustic strain, introducing a fundamentally new paradigm that establishes a powerful synergy between QCLs and BAWs towards coherent control and frequency comb engineering in the THz domain.

physics.optics

Deterministic single-photon source with on-chip 5.6 GHz acoustic clock

Scalable solid-state single-photon sources with triggered single-photon emission rates exceeding a few GHz would aid in the wide technological adoption of photonic quantum technologies. We demonstrate triggering of a quantum dot (QD) single photon emission using dynamic Purcell effect induced at a frequency of several GHz by acoustic strain. To this end, InAs QDs are integrated in a hybrid photon-phonon patterned microcavity with engineered optical and acoustic phonon degrees of freedom. The density of optical states is tailored by the lateral confinement of photons in um-sized traps defined lithographically in the microcavity spacer. The single-photon character of the emission from a QD in a trap is confirmed by measuring single-photon statistics. We demonstrate modulation of the QD transition energy in a trap with a frequency up to 14 GHz by monochromatic longitudinal bulk acoustic phonons generated by piezoelectric transducers. For the modulation frequency of 5.6 GHz, corresponding to the acoustic mode of the microcavity, the QD energy is periodically shifted through a spectrally narrow confined photonic mode leading to an appreciable enhancement of the QD emission due to the dynamic Purcell effect. We numerically explored time-evolution of the QD-cavity system under modulation and identified conditions that could enable single-photon rates exceeding 5 GHz. The platform thus enables the implementation of scalable III-V-based single-photon sources with on-chip tunable acoustic clocks with frequencies that can exceed several GHz under continuous wave optical excitation.

cond-mat.mes-hall

Ground state exciton-polariton condensation by coherent Floquet driving

The on-demand selective population transfer between states in multilevel quantum systems is a challenging problem with implications for a wide-range of physical platforms including photon and exciton-polariton Bose- Einstein condensates (BECs). Here, we introduce an universal strategy for this selective transfer based on a strong time-periodic energy modulation, which is experimentally demonstrated by using a GHz acoustic wave to control the gain and loss of confined modes of an exciton-polariton BEC in a microcavity. The harmonic acoustic field shifts the energy of the excitonic BEC component relative to the photonic ones, which generates a dynamic population transfer within a multimode BEC that can be controlled by the acoustic amplitude. In this way, the full BEC population can be selectively transferred to the ground state to yield a single-level emission consisting of a spectral frequency comb with GHz repetition rates as well as picosecond-scale correlations. A theoretical model reproduces the observed time evolution and reveals a dynamical interplay between bosonic stimulation and the adiabatic Landau-Zener-like population transfer. Our approach provides a new avenue for the Floquet engineering of light-matter systems and enables tunable single- or multi-wavelength ultrafast pulsed laser-like emission for novel information technologies.

physics.optics

Near-room-temperature zero-dimensional polariton lasers with sub-10 GHz linewidths

Narrow and brilliant spectral lines are essential assets for high-resolution spectroscopy as well as for precision sensing and optomechanics. In semiconductor structures and, in particular, in the well-established (Al,Ga)As material system, strong emission lines with nanosecond coherence times can be provided by the opto-electronic resonances of microcavity exciton-polariton condensates. The temporal coherence of these resonances, however, normally rapidly deteriorates as the temperature increases beyond a few tens of kelvins due to exciton dissociation. Here, we demonstrate that the temperature stability of polariton condensates in (Al,Ga)As can be significantly improved by confinement within micrometer-sized intracavity traps. We show that trapped condensates can survive up to ~200 K while maintaining a light-matter character with decoherence rates below 10 GHz (i.e., $< 40 {\mu}$eV linewidths). These linewidths are by an order of magnitude smaller than those so far reported for other solid-state systems at these temperatures. Confinement thus provides a pathway towards room-temperature polariton condensation using the well-established (Al,Ga)As material system with prospects for application in scalable on-chip photonic devices for optical processing, sensing, and computing.

cond-mat.mtrl-sci

GHz guided optomechanics in planar semiconductor microcavities

Hybrid opto, electro, and mechanical systems operating at several GHz offer extraordinary opportunities for the coherent control of opto-electronic excitations down to the quantum limit. We introduce here a monolithic platform for GHz semiconductor optomechanics based on electrically excited phonons guided along the spacer of a planar microcavity (MC) embedding quantum well (QW) emitters. The MC spacer bound by cleaved lateral facets acts as an embedded acoustic waveguide (WG) cavity with a high quality factor ($Q\sim10^5$) at frequencies well beyond 6~GHz, along which the acoustic modes live over tens of $μ$s. The strong acoustic fields and the enhanced optomechanical coupling mediated by electronic resonances induce a huge modulation of the energy (in the meV range) and strength (over 80\%) of the QW photoluminescence (PL), which, in turn, becomes a sensitive local phonon probe. Furthermore, we show the coherent coupling of acoustic modes at different sample depths, thus opening the way for phonon-mediated coherent control and interconnection of three-dimensional epitaxial nanostructures.

cond-mat.mtrl-sci

Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume

The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded in thick GaN and GaAs layers. Thin (Al,Ga)N and (Al,Ga)As barriers, respectively, prevent carriers diffusing in the GaN and GaAs layers to reach the well, which would broaden the profiles. The experimental cathodoluminescence profiles are found to be systematically wider than the energy loss distributions calculated by means of the Monte Carlo program CASINO, with the width monotonically increasing with decreasing temperature. This effect is observed for both GaN and GaAs and becomes more pronounced for higher acceleration voltages. We discuss this phenomenon in terms of both, the electron-phonon interaction controlling the energy relaxation of hot carriers, and the shape of the initial carrier distribution. Finally, we present a phenomenological approach to simulate the carrier generation volume that can be used for the investigation of the temperature dependence of carrier diffusion.

cond-mat.mtrl-sci

Flying electron spin control gates

The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contactless gates that move together with the spin. The concept is realized using electron spins trapped and transported by moving potential dots defined by a surface acoustic wave (SAW). The SAW strain at the electron trapping site, which is set by the SAW amplitude, acts as a contactless, tunable gate that controls the precession frequency of the flying spins via the spin-orbit interaction. We show that the degree of precession control in moving dots exceeds previously reported results for unconstrained transport by an order of magnitude and is well accounted for by a theoretical model for the strain contribution to the spin-orbit interaction. This flying spin gate permits the realization of an acoustically driven optical polarization modulator based on electron spin transport, a key element for on-chip spin information processing with a photonic interface.

cond-mat.mes-hall

Electrically driven exciton-polariton optomechanics at super high frequencies

Polaritons enable the resonant coupling of excitons and photons to vibrations in the application-relevant super high frequency (SHF, 3-30 GHz) domain. We introduce a novel platform for coherent optomechanics based on the coupling of exciton-polaritons and electrically driven SHF longitudinal acoustic phonons confined within the spacer region of a planar Bragg microcavity. An intrinsic property of the microcavity platform is the back-feeding of phonons via reflections at the sample boundaries, which enables frequency x quality factors products exceeding 10^14 Hz as well as huge modulation amplitudes of the optical transition energies (up to 8 meV). We show that the modulation is dominated by the phonon-induced energy shifts of the excitonic polariton component, thus leading to an oscillatory transition between the regimes of weak and strong light-matter coupling. These results open the way for polariton-based coherent optomechanics in the non-adiabatic, side-band-resolved regime of coherent control.

physics.app-ph

Dynamically Tuned Arrays of Polariton Parametric Oscillators

Optical parametric oscillations (OPOs) - a non-linear process involving the coherent coupling of an optically excited two particle pump state to a signal and an idler states with different energies - is a relevant mechanism for optical amplification as well as for the generation of correlated photons. OPOs require states with well-defined symmetries and energies: the fine-tuning of material properties and structural dimensions to create these states remains a challenge for the realization of scalable OPO-based functionalities in semiconductor nanostructures. Here, we demonstrate a pathway towards this goal based on the control of confined microcavity exciton-polaritons modulated by the spatially and time varying dynamical potentials produced by a surface acoustic waves (SAW). The exciton-polariton are confined in um-sized intra-cavity traps fabricated by structuring a planar semiconductor microcavity during the epitaxial growth process. OPOs in these structures benefit from the enhanced non-linearities of confined systems. We show that SAW fields induce state-dependent and time-varying energy shifts, which enable the energy alignment of the confined levels with the appropriate symmetry for OPO triggering. Furthermore, the dynamic acoustic tuning, which is fully described by a theoretical model for the modulation of the confined polaritons by the acoustic field, compensates for fluctuations in symmetry and dimensions of the confinement potential thus enabling a variety of dynamic OPO regimes. The robustness of the acoustic tuning is demonstrated by the synchronous excitation of an array of confined OPOs using a single acoustic beam, thus opening the way for the realization of scalable non-linear on-chip systems.

cond-mat.other

Generation and propagation of super-high-frequency bulk acoustic wave in GaAs

Coherent super-high-frequency (SHF) vibrations provide an excellent tool for the modulation and control of excitations in semiconductors. Here, we investigate the piezoelectric generation and propagation of longitudinal bulk acoustic waves (LBAWs) with frequencies up to 20 GHz in GaAs crystals using bulk acoustic wave resonators (BAWRs) based on piezoelectric thin ZnO films. We show that the electro-acoustic conversion efficiency of the BAWRs depends sensitively on the sputtering conditions of the ZnO films. The BAWRs were then used for the study of the propagation properties of the LBAWs in GaAs in the frequency and temperature ranges from 1 to 20 GHz and 10 and 300 K, respectively, which have so far not been experimentally accessed. We found that the intrinsic acoustic absorption of GaAs in the temperature range from 80 K to 300 K is dominated by scattering with thermal phonons. At lower temperatures, in contrast, the intrinsic acoustic absorption saturates at a frequency-dependent value. Experiments carried out with different propagation lengths indicate that the saturation is associated with losses during reflection at the sample boundaries. We also demonstrate devices with high quality factor fabricated on top of acoustic Bragg-reflectors. The results presented here prove the feasibility of high-quality acoustic resonators embedding GaAs-based nanostructures, thus opening the way for the modulation and control of their properties by electrically excited SHF LBAWs.

cond-mat.mtrl-sci

Sidewall quantum wires on GaAs(001) substrates

We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a consequence of material accumulation on the sidewalls of the ridges during the overgrowth of a quantum well (QW) on the patterned surface. The QWRs are approximately 200 nm-wide and have emission energies red-shifted by 27meV with respect to the surrounding QW. Spatially resolved spectroscopic photoluminencence studies indicate that the QW thickness reduces around the QWRs, thus creating a 4 meV energy barrier for the transfer of carriers from the QW to the QWR. We show that the QWRs act as efficient channels for the transport of optically excited electrons and holes over tens of μm by a high-frequency surface acoustic wave (SAW). These results demonstrate the feasibility of efficient ambipolar transport in QWRs with sub-micrometer dimensions, photolithographically defined on GaAs substrates.

cond-mat.mes-hall

Attractive dipolar coupling between stacked exciton fluids

The interaction between aligned dipoles is long-ranged and highly anisotropic: it changes from repulsive to attractive depending on the relative positions of the dipoles. We report on the observation of the attractive component of the dipolar coupling between excitonic dipoles in stacked semiconductor bilayers. We show that the presence of a dipolar exciton fluid in one bilayer modifies the spatial distribution and increases the binding energy of excitonic dipoles in a vertically remote layer. The binding energy changes are explained by a many-body polaron model describing the deformation of the exciton cloud due to its interaction with a remote dipolar exciton. The results open the way for the observation of theoretically predicted new and exotic collective phases, the realization of interacting dipolar lattices in semiconductor systems as well as for engineering and sensing their collective excitations.

cond-mat.quant-gas

Quantum confinement of exciton-polaritons in a structured (Al,Ga)As microcavity

The realization of quantum functionalities with polaritons in an all-semiconductor platform requires the control of the energy and spatial overlap of the wave functions of single polaritons trapped in potentials with precisely controlled shape and size. In this study, we reach the confinement of microcavity polaritons in traps with an effective potential width down to 1 um, produced by patterning the active region of the (Al,Ga)As microcavity between two molecular beam epitaxy growth runs. We correlate spectroscopic and structural data to show that the smooth surface relief of the patterned traps translates into a graded confinement-potential characterized by lateral interfaces with a finite lateral-width. We show that the structuring method is suitable for the fabrication of arrays of proximal traps, supporting hybridization between adjacent lattice sites.

physics.app-ph

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable, and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

nlin.CD

Second harmonic generation in GaAs photonic crystal cavities in (111)B and (001) crystal orientations

We demonstrate second harmonic generation in photonic crystal cavities in (001) and (111)B oriented GaAs. The fundamental resonance is at 1800 nm, leading to second harmonic below the GaAs bandgap. Below-bandgap operation minimizes absorption of the second harmonic and two photon absorption of the pump. Photonic crystal cavities were fabricated in both orientations at various in-plane rotations of the GaAs substrate. The rotation dependence and farfield patterns of the second harmonic match simulation. We observe similar maximum efficiencies of 1.2 %/W in (001) and (111)B oriented GaAs.

physics.optics

Second Harmonic Generation in Photonic Crystal Cavities in (111)-Oriented GaAs

We demonstrate second harmonic generation at telecommunications wavelengths in L3 photonic crystal cavities in (111)-oriented GaAs. The second harmonic power from photonic crystal cavities fabricated in (111)-oriented GaAs is significantly increased compared to those fabricated in conventional (001)-oriented GaAs.

physics.optics

Nonlinear frequency conversion using high quality modes in GaAs nanobeam cavities

We demonstrate the design, fabrication and characterization of nanobeam photonic crystal cavities in (111)-GaAs with multiple high quality factor modes, with large frequency separations (up to 740 nm in experiment, i.e., a factor of 1.5 and up to an octave in theory). Such structures are crucial for efficient implementation of nonlinear frequency conversion. Here, we employ them to demonstrate sum frequency generation from 1300 nm and 1950 nm to 780 nm. These wavelengths are particularly interesting for quantum frequency conversion between Si vacancy centers in diamond and the fiber optic network.

physics.optics