arXiv subjects

Klaus Ensslin

Publications and source records attributed to Klaus Ensslin.

At least 37 records · Page 2Linked to original sources

arXiv2025

Tunable spin-orbit splitting in bilayer graphene/WSe$_2$ quantum devices

Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe$_2$ heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV - more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.

cond-mat.mes-hall↗

arXiv2025

Entropy of a double quantum dot

We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a single coherent system, like a molecule. We study entropy changes in both regimes due to changes in the occupation of the system. First we recover the single-dot result for each dot, that the occupation of the dot by a single electron corresponds to an increase in the entropy of $k_{\mathrm{B}} \log 2$. Next we examine two different charge transitions in the "molecular" regime, and how it reveals itself in terms of the measured entropy. We also uncover a realization of Pauli blockade that clutters the entropy signal. By applying a rate equation model, we demonstrate the effect's nonequilibrium origins and exclude it from the analysis of the system's entropy. Understanding these experiments in this simplest coupled system enables the study of the entropy in other, more complicated coupled quantum systems, such as ones with topological or highly entangled ground states.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable band-edge in few-layer MoS$_2$

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the $K$-points, whereas in multilayers, they shift to the $Q$-points, midway between the $Γ$ and $K$ points. In this study, we conduct magnetotransport experiments to measure the occupation in the $Q$ and $K$ valleys in fourlayer molybdenum disulfide (MoS$_2$). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid $k\cdot p$ tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS$_2$, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.

cond-mat.mes-hall↗

arXiv2025

Spin-valley locked excited states spectroscopy in a one-particle bilayer graphene quantum dot

Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust quantum number that can therefore be harnessed for this purpose. The simplest implementation of a valley qubit would rely on two states with opposite valleys as in the case of a single-carrier bilayer graphene quantum dot immersed in a small perpendicular magnetic field ($B_\perp\lesssim 100$mT). However, the single-carrier quantum dot excited states spectrum has not been resolved to date in the relevant magnetic field range. Here, we fill this gap, by measuring the parallel and perpendicular magnetic field dependence of this spectrum with an unprecedented resolution of $4μ$eV. We use a time-resolved charge detection technique that gives us access to individual tunnel events. Our results come as a direct verification of the predicted spectrum and establish a new upper-bound on inter-valley mixing, equal to our energy resolution. Our charge detection technique opens the door to measuring the relaxation time of a valley qubit in a single-carrier bilayer graphene quantum dot.

cond-mat.mes-hall↗

arXiv2025

Spin-Valley Protected Kramers Pair in Bilayer Graphene

The intrinsic valley degree of freedom makes bilayer graphene (BLG) a unique platform for semiconductor qubits. The single-carrier quantum dot (QD) ground state exhibits a two-fold degeneracy, where the two states that constitute a Kramers pair, have opposite spin and valley quantum numbers. Because of the valley-dependent Berry curvature, an out-of-plane magnetic field breaks the time-reversal symmetry of this ground state and a qubit can be encoded in the spin-valley subspace. The Kramers states are protected against known spin- and valley-mixing mechanisms because mixing requires a simultaneous change of both quantum numbers. Here, we fabricate a tunable QD device in Bernal BLG and measure a spin-valley relaxation time for the Kramers states of ${38~\mathrm{s}}$, which is two orders of magnitude longer than the ${0.4~\mathrm{s}}$ measured for purely spin-blocked states. We also show that the intrinsic Kane-Mele spin-orbit splitting enables a Kramers doublet single-shot readout even at zero magnetic field with a fidelity above ${99\%}$. If these long-lived Kramers states also possess long coherence times and can be effectively manipulated, electrostatically defined QDs in BLG may serve as long-lived semiconductor qubits, extending beyond the spin qubit paradigm.

cond-mat.mes-hall↗

arXiv2024

Experimental detection of vortices in magic-angle graphene

The tunability of superconducting magic-angle twisted-layer graphene films elevates this material system to a promising candidate for superconducting electronics. We implement a gate-tuned Josephson junction in a magic-angle twisted four-layer graphene film. Field-dependent measurements of the critical current show a Fraunhofer-like pattern that differs from the standard pattern with characteristics typical for a weak transverse screener. We observe sudden shifts associated with vortices jumping into and out of the leads. By tuning the leads to the edge of the superconducting dome, we observe fast switching between superconducting and normal states, an effect associated with vortex dynamics. Time-dependent measurements provide us with the vortex energy scale and an estimate for the London penetration depth, in agreement with recent kinetic inductance measurements on twisted graphene films. Our results prove the utility of our junction as a sensor for vortex detection, allowing us to extract fundamental properties of the 2D superconductor.

cond-mat.mes-hall↗

arXiv2024

Quasiparticle and superfluid dynamics in Magic-Angle Graphene

Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconventional, strongly coupled and topological superconductivity. A major obstacle to progress in this direction is that key thermodynamic properties, such as specific heat, electron-phonon coupling and superfluid stiffness, are extremely challenging to measure due to the 2D nature of the material and its relatively low energy scales. Here, we use a gate-defined, radio frequency-biased, Josephson junction to probe the electronic dynamics of magic-angle twisted bilayer graphene (MATBG). We reveal both the electronic quasiparticle dynamics, driven by their thermalization through phonon scattering, as well as the condensate dynamics, driven by the inertia of Cooper pairs. From these properties we recover the evolution of thermalization rates, and the superfluid stiffness across the phase diagram. Our findings favor an anisotropic or nodal pairing state and allow to estimate the strength of electron-phonon coupling. These results contribute to understanding the underlying mechanisms of superconductivity in MATBG while establishing an easy-to-implement method for characterizing thermal and superfluid properties of superconducting 2D materials.

cond-mat.supr-con↗

arXiv2024

Pauli blockade catalogue and three- and four-particle Kondo effect in bilayer graphene quantum dots

Pauli blockade is a fundamental quantum phenomenon that also serves as a powerful tool for qubit manipulation and read-out. While most systems exhibit a simple even-odd pattern of double-dot Pauli spin blockade due to the preferred singlet pairing of spins, the additional valley degree of freedom offered by bilayer graphene greatly alters this pattern. Inspecting bias-triangle measurements at double-dot charge degeneracies with up to four electrons in each dot reveals a much richer double-dot Pauli blockade catalogue with both spin and/or valley blockade. In addition, we use single-dot Kondo effect measurements to substantiate our understanding of the three- and four-particle state spectra by analyzing their magnetic field dependence. With high controllability and reported long valley- and spin-relaxation times, bilayer graphene is a rising platform for hosting semiconductor quantum dot qubits. A thorough understanding of state spectra is crucial for qubit design and manipulation, and the rich Pauli blockade catalogue provides an abundance of novel qubit operational possibilities and opportunities to explore intriguing spin and valley physics.

cond-mat.mes-hall↗

arXiv2024

Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator

We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance ($Z_\mathrm{r} \approx 1 \mathrm{kΩ}$) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waals heterostructure. Electric dipole coupling between the subsystems allows the resonator to sense the electric susceptibility of the double quantum dot from which we reconstruct its charge stability diagram. We achieve sensitive and fast detection with a signal-to-noise ratio of 3.5 within 1 $μ\mathrm{s}$ integration time. The charge-photon interaction is quantified in the dispersive and resonant regimes by comparing the coupling-induced change in the resonator response to input-output theory, yielding a maximal coupling strength of $g/2π = 49.7 \mathrm{MHz}$. Our results introduce cQED as a probe for quantum dots in van der Waals materials and indicate a path toward coherent charge-photon coupling with bilayer graphene quantum dots.

cond-mat.mes-hall↗

arXiv2024

Long-lived valley states in bilayer graphene quantum dots

Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital degeneracy that arises from the symmetry of the hexagonal crystal structure. The use of valleys could be advantageous, as known spin- and orbital-mixing mechanisms are unlikely to be at work for valleys, promising more robust qubits. The Berry curvature associated with valley states allows for electrical control of their energies, suggesting routes for coherent qubit manipulation. However, the relaxation time of valley states -- which ultimately limits these qubits' coherence properties and therefore their suitability as practical qubits -- is not yet known. Here, we measure the characteristic relaxation times of these spin and valley states in gate-defined bilayer graphene quantum dot devices. Different valley states can be distinguished from each other with a fidelity of over 99%. The relaxation time between valley triplets and singlets exceeds 500ms, and is more than one order of magnitude longer than for spin states. This work facilitates future measurements on valley-qubit coherence, demonstrating bilayer graphene as a practical platform hosting electrically controlled long-lived valley qubits.

cond-mat.mes-hall↗

arXiv2023

Gate-defined superconducting channel in magic-angle twisted bilayer graphene

Magic-angle twisted bilayer graphene (MATBG) combines in one single material different phases like insulating, metallic and superconducting. These phases and their in-situ tunability make MATBG an important platform for the fabrication of superconducting devices. We realize a split gate-defined geometry which enables us to tune the width of a superconducting channel formed in MATBG. We observe a smooth transition from superconductivity to highly resistive transport by progressively reducing the channel width using the split gates or by reducing the density in the channel. Using the gate-defined constriction, we control the flow of the supercurrent, either guiding it through the constriction or throughout the whole device or even blocking its passage completely. This serves as a foundation for developing quantum constriction devices like superconducting quantum point contacts, quantum dots, and Cooper-pair boxes in MATBG.

cond-mat.mes-hall↗

arXiv2023

Evidence of the Coulomb gap in the density of states of MoS$_2$

$\mathrm{MoS_2}$ is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of the insulating state at low carrier density deserves further investigation, as it is important for fundamental research and applications. In this study, we investigate the insulating state of a dual-gated exfoliated bilayer $\mathrm{MoS_2}$ field-effect transistor by performing magnetotransport experiments. We observe positive and non-saturating magnetoresistance, in a regime where only one band contributes to electron transport. At low electron density ($\sim 1.4\times 10^{12}~\mathrm{cm^{-2}}$) and a perpendicular magnetic field of 7 Tesla, the resistance exceeds by more than one order of magnitude the zero field resistance and exponentially drops with increasing temperature. We attribute this observation to strong electron localization. Both temperature and magnetic field dependence can, at least qualitatively, be described by the Efros-Shklovskii law, predicting the formation of a Coulomb gap in the density of states due to Coulomb interactions. However, the localization length obtained from fitting the temperature dependence exceeds by more than one order of magnitude the one obtained from the magnetic field dependence. We attribute this discrepancy to the presence of a nearby metallic gate, which provides electrostatic screening and thus reduces long-range Coulomb interactions. The result of our study suggests that the insulating state of $\mathrm{MoS_2}$ originates from a combination of disorder-driven electron localization and Coulomb interactions.

cond-mat.mes-hall↗

arXiv2023

High mobility transport in isotopically-enriched $^{12}$C and $^{13}$C exfoliated graphene

Graphene quantum dots are promising candidates for qubits due to weak spin-orbit and hyperfine interactions. The hyperfine interaction, controllable via isotopic purification, could be the key to further improving the coherence. Here, we use isotopically enriched graphite crystals of both $^{12}$C and $^{13}$C grown by high-pressure-high-temperature method to exfoliate graphene layers. We fabricated Hall bar devices and performed quantum transport measurements, revealing mobilities exceeding $10^{5}$$\textrm{cm}^{2}/Vs$ and a long mean free path of microns, which are as high as natural graphene. Shubnikov-de Haas oscillations, quantum Hall effect up to the filling factor of one, and Brown-Zak oscillations due to the alignment of hBN and graphene are observed thanks to the high mobility. These results constitute a material platform for physics and engineering of isotopically-enriched graphene qubits.

cond-mat.mes-hall↗

arXiv2023

Tunable quantum interferometer for correlated moiré electrons

Magic-angle twisted bilayer graphene (MATBG) can host an intriguing variety of gate-tunable correlated states, including superconducting and correlated insulator states. Junction-based superconducting devices, such as Josephson junctions and SQUIDs, have been introduced recently and enable the exploration of the charge, spin, and orbital nature of superconductivity and the coherence of moiré electrons in MATBG. However, complementary fundamental coherence effects - in particular, the Little-Parks effect in a superconducting and the Aharonov-Bohm effect in a normal conducting ring - remained to be observed. Here, we report the observation of both these phenomena in a single gate-defined ring device where we can embed a superconducting or normal conducting ring in a correlated or band insulator. We directly observe the Little-Parks effect in the superconducting phase diagram as a function of density and magnetic field, confirming the effective charge of $2e$. By measuring the Aharonov-Bohm effect, we find that in our device, the coherence length of normal conducting moiré electrons exceeds a few microns at 50 mK. Surprisingly, we also identify a regime characterized by $h/e$-periodic oscillations but with superconductor-like nonlinear transport. Taken together, these experiments establish a novel device platform in MATBG, and more generally in tunable 2D materials, to unravel the nature of superconductivity and other correlated quantum states in these materials.

cond-mat.mes-hall↗

arXiv2023

Long distance electron-electron scattering detected with point contacts

We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak is particularly sharp at relatively low temperatures $T\approx$1.5 K: the curve rounds on a scale of few tens of $μ$T hinting at length scales of several millimeters for the corresponding scattering processes. We propose a model based on the transition between different transport regimes with increasing temperature: from ballistic transport to few electron-electron scatterings to hydrodynamic superballistic flow to hydrodynamic Poiseuille-like flow. The model is in qualitative and, in many cases, quantitative agreement with the experimental observations.

cond-mat.mes-hall↗

arXiv2023

Nonlinear response of 2DEG in the quantum Hall regime

Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Many systems have incorporated inversion symmetry breaking into their band or crystal structures. In this work, we demonstrate that a conventional two-dimensional electron gas (2DEG) system with a back gate shows non-reciprocal behavior (with voltage proportional to current squared) in the quantum Hall regime, which depends on the out-of-plane magnetic field and contact configuration. The inversion symmetry is broken due to the presence of the back gate and magnetic field, and our phenomenological model provides a qualitative explanation of the experimental data. Our results suggest a universal mechanism that gives rise to non-reciprocal behavior in gated samples.

cond-mat.mes-hall↗

arXiv2023

Kagomé quantum oscillations in graphene superlattices

Periodic systems feature the Hofstadter butterfly spectrum produced by Brown--Zak minibands of electrons formed when magnetic field flux through the lattice unit cell is commensurate with flux quantum and manifested by magneto-transport oscillations. Quantum oscillations, such as Shubnikov -- de Haas effect and Aharonov--Bohm effect, are also characteristic for electronic systems with closed orbits in real space and reciprocal space. Here we show the intricate relation between these two phenomena by tracing quantum magneto-oscillations to Lifshitz transitions in graphene superlattices, where they persist even at relatively low fields and very much above liquid-helium temperatures. The oscillations originate from Aharonov--Bohm interference on cyclotron trajectories that form a kagomé-shaped network characteristic for Lifshitz transitions. In contrast to Shubnikov - de Haas oscillations, the kagomé oscillations are robust against thermal smearing and they can be detected even when the Hofstadter butterfly spectrum is undermined by electron's scattering. We expect that kagomé quantum oscillations are generic to rotationally-symmetric two-dimensional crystals close to Lifshitz transitions.

cond-mat.mes-hall↗

arXiv2023

Quantum capacitive coupling between large-angle twisted graphene layers

Large-angle twisted bilayer graphene (tBLG) is known to be electronically decoupled due to the spatial separation of the Dirac cones corresponding to individual graphene layers in the reciprocal space. The close spacing between the layers causes strong capacitive coupling, opening possibilities for applications in atomically thin devices. Here, we present a self-consistent quantum capacitance model for the electrostatics of decoupled graphene layers, and further generalize it to deal with decoupled tBLG at finite magnetic field and large-angle twisted double bilayer graphene at zero magnetic field. We probe the capacitive coupling through the conductance, showing good agreement between simulations and experiments for all the systems considered. We also propose a new experiment utilizing the decoupling effect to induce a huge and tunable bandgap in bilayer graphene by applying a moderately low bias. Our model can be extended to systems composed of decoupled graphene multilayers as well as non-graphene systems, opening a new realm of quantum-capacitively coupled materials.

cond-mat.mes-hall↗