arXiv subjects

Klaus Ensslin

Publications and source records attributed to Klaus Ensslin.

At least 109 records · Page 6Linked to original sources

arXiv2018

Long-range spin-coherence in a strongly-coupled all electronic dot-cavity system

We present a theoretical analysis of spin-coherent electronic transport across a mesoscopic dot-cavity system. Such spin-coherent transport has been recently demonstrated in an experiment with a dot-cavity hybrid implemented in a high-mobility two-dimensional electron gas [C. Rössler et al., Phys. Rev. Lett. 115, 166603 (2015)] and its spectroscopic signatures have been interpreted in terms of a competition between Kondo-type dot-lead and molecular-type dot-cavity singlet-formation. Our analysis brings forward all the transport features observed in the experiments and supports the claim that a spin-coherent molecular singlet forms across the full extent of the dot-cavity device. Our model analysis includes: (i) a single-particle numerical investigation of the two-dimensional geometry, its quantum-coral-type eigenstates and associated spectroscopic transport features, (ii) the derivation of an effective interacting model based on the observations of the numerical and experimental studies, and (iii) the prediction of transport characteristics through the device using a combination of a master-equation approach on top of exact eigenstates of the dot-cavity system, and an equation-of-motion analysis that includes Kondo physics. The latter provides additional temperature scaling predictions for the many-body phase transition between molecular- and Kondo-singlet formation and its associated transport signatures.

cond-mat.mes-hall↗

arXiv2018

Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot

We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of single charge carriers onto the dot. This result may be of use for quantum Hall interferometry experiments.

cond-mat.mes-hall↗

arXiv2018

Electrostatically induced quantum point contact in bilayer graphene

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$Ω$. This exceeds previously reported values of $R =~$10 - 100 k$Ω$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $ΔG = 2~e^2/h$ and $ΔG = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.

cond-mat.mes-hall↗

arXiv2017

Cavity-mediated coherent coupling between distant quantum dots

Scalable architectures for quantum information technologies require to selectively couple long-distance qubits while suppressing environmental noise and cross-talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated long-distance coupling effectively minimizes undesirable direct cross-talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

cond-mat.mes-hall↗

arXiv2017

Anisotropy and suppression of spin--orbit interaction in a GaAs double quantum dot

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin--orbit coefficents. On the other hand they make it possible to turn on and off the effect of SOI with a high on/off-ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin--orbit magnetic field. Spin-lifetimes of 10 s are achieved at a tunnel rate close to 1 kHz.

cond-mat.mes-hall↗

arXiv2017

Passivation of Edge States in Etched InAs Sidewalls

We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of $\mathrm{SiN}_{\mathrm{x}}$ do not show an improvement. Surprisingly, atomic layer deposition of $\mathrm{Al}_{\mathrm{2}}\mathrm{O}_{\mathrm{3}}$ leads to an increase in edge resistivity of more than an order of magnitude. While the mechanism behind this change is not fully understood, possible reasons are suggested.

cond-mat.mes-hall↗

arXiv2017

Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS$_2$ van der Waals Heterostructures

We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.

cond-mat.mes-hall↗

arXiv2017

Edge transport in InAs and InAs/GaSb quantum wells

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $\mathrm{kΩ/μm}$ is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.

cond-mat.mes-hall↗

arXiv2017

Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well

We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.

cond-mat.mes-hall↗

arXiv2017

Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.

cond-mat.mes-hall↗

arXiv2017

Finite shot noise and electron heating at quantized conductance in high-mobility quantum point contacts

We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high measurement accuracy has enabled us to discuss the Fano factor to characterize the shot noise with a precision of 1 %. We observed that the shot noise at zero magnetic field exhibits a slight enhancement exceeding the single particle theoretical prediction, and that it gradually decreases as a perpendicular magnetic field is applied. We also confirmed that this additional noise completely vanishes in the quantum Hall regime. These phenomena can be explained by the electron heating effect near the QPC, which is suppressed with increasing magnetic field.

cond-mat.mes-hall↗

arXiv2017

Fermi edge singularities in transport through lateral GaAs quantum dots

We measure tunnelling currents through electrostatically defined quantum dots in a GaAs/AlGaAs heterostructure connected to two leads. For certain tunnelling barrier configurations and high sample bias we find a pronounced resonance associated with a Fermi edge singularity. This many-body scattering effect appears when the electrochemical potential of the quantum dot is aligned with the Fermi level of the lead less coupled to the dot. By changing the relative tunnelling barrier strength we are able to tune the interaction of the localised electron with the Fermi sea.

cond-mat.mes-hall↗

arXiv2017

Classical origin of conductance oscillations in an integrable cavity

Scanning gate microscopy measurements in a circular ballistic cavity with a tip placed near its center yield a non-monotonic dependence of the conductance on the tip voltage. Detailed numerical quantum calculations reproduce these conductance oscillations, and a classical scheme leads to its physical understanding. The large-amplitude conductance oscillations are shown to be of classical origin, and well described by the effect of a particular class of short trajectories.

cond-mat.mes-hall↗

arXiv2017

Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matter-like quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work we demonstrate strong coupling between the charge degree of freedom in a gate-detuned GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices (SQUIDs). In the resonant regime, we resolve the vacuum Rabi mode splitting of size $2g/2π= 238$ MHz at a resonator linewidth $κ/2π= 12$ MHz and a DQD charge qubit dephasing rate of $γ_2/2π= 80$ MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit based cavity QED for quantum information processing in semiconductor nano-structures.

cond-mat.mes-hall↗

arXiv2016

Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

cond-mat.mes-hall↗

arXiv2016

Heat dissipation and fluctuations in a driven quantum dot

While thermodynamics is a useful tool to describe the driving of large systems close to equilibrium, fluctuations dominate the distribution of heat and work in small systems and far from equilibrium. We study the heat generated by driving a small system and change the drive parameters to analyse the transition from a drive leaving the system close to equilibrium to driving it far from equilibrium. Our system is a quantum dot in a GaAs/AlGaAs heterostructure hosting a two-dimensional electron gas. The dot is tunnel-coupled to one part of the two-dimensional electron gas acting as a heat and particle reservoir. We use standard rate equations to model the driven dot-reservoir system and find excellent agreement with the experiment. Additionally, we quantify the fluctuations by experimentally test the theoretical concept of the arrow of time, predicting our ability to distinguish whether a process goes in the forward or backward drive direction.

cond-mat.mes-hall↗

arXiv2016

On the impact of strain on the electronic properties of InAs/GaSb quantum well systems

Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned samples were mounted to piezo electric elements to exert strain along the [011] and [001] crystal directions. When the Fermi energy is tuned through the mini gap, a dramatic impact on the resistivity at the charge neutrality point is found which depends on the amount of applied external strain. In the electron and hole regimes, strain influences the Landau level structure. By analyzing the intrinsic strain from the epitaxial growth, the external strain from the piezo elements and combining our experimental results with numerical simulations of strained and unstrained quantum wells, we compellingly illustrate why the InAs/GaSb material system is regularly found to be semimetallic.

cond-mat.str-el↗

arXiv2016

Measuring the degeneracy of discrete energy levels using a GaAs/AlGaAs quantum dot

We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.

cond-mat.mes-hall↗