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Klaus Kern

Publications and source records attributed to Klaus Kern.

At least 73 records · Page 4Linked to original sources

Temperature and magnetic field dependence of a Kondo system in the weak coupling regime

The Kondo effect arises due to the interaction between a localized spin and the electrons of a surrounding host. Studies of individual magnetic impurities by scanning tunneling spectroscopy have renewed interest in Kondo physics; however, a quantitative comparison with theoretical predictions remained challenging. Here we show that the zero-bias anomaly detected on an organic radical weakly coupled to a Au (111) surface can be described with astonishing agreement by perturbation theory as originally developed by Kondo 60 years ago. Our results demonstrate that Kondo physics can only be fully conceived by studying both temperature and magnetic field dependence of the resonance. The identification of a spin 1/2 Kondo system is of relevance not only as a benchmark for predictions for Kondo physics but also for correlated electron materials in general.

cond-mat.str-el↗

Tailoring the diameter of decorated CN nanotubes by temperature variations using HF-CVD

Patterned films of decorated nitrogenated carbon (C-N) nanotubes were catalytically synthesised by hot filament chemical vapour deposition (HF-CVD) in a nitrogen-methane-ammonia environment. The systematic study of a transition between different kinds of C-N nanostructures as a function of the local substrate temperature ranging from 700 up to 820C is presented. The morphology, the diameter as well as the properties of the generated tubular structures showed strong dependence on this parameter. By means of electron microscopy a new type of decoration covering all tubular structures was observed. Buckled lattice fringes revealed the disordered graphitic-like character of the hollow C-N nanotubes. Raman spectroscopy confirmed a transition in the microscopic order as a function of temperature. Furthermore field emission in vacuum was studied and showed a spectacular correlation to the deposition temperature and therefore the diameter of the C-N tubes. For arrays of tubes thinner than 50 nm an onset field below 4 V/um was observed.

cond-mat.mtrl-sci↗

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi2Te2Se, we show that via van der Waals epitaxial growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiOx substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate.

cond-mat.mtrl-sci↗

Two-dimensional magnetotransport in Bi2Te2Se nanoplatelets

Single-crystalline Bi2Te2Se nanoplates with thicknesses between 8 and 30 nm and lateral sizes of several micrometers were synthesized by a vapour-solid growth method. Angle-dependent magnetoconductance measurements on individual nanoplates revealed the presence of a two-dimensional weak anti-localization effect. In conjunction with gate-dependent charge transport studies performed at different temperatures, evidence was gained that this effect originates from the topologically protected surface states of the nanoplates.

cond-mat.mes-hall↗

Anisotropic spin gaps in BiAg$_2$-Ag/Si(111)

We present a detailed analysis of the band structure of the BiAg$_2$/Ag/Si(111) trilayer system by means of high resolution Angle Resolved Photoemission Spectroscopy (ARPES). BiAg2/Ag/Si(111) exhibits a complex spin polarized electronic structure due to giant spin-orbit interactions. We show that a complete set of constant energy ARPES maps, supplemented by a modified nearly free electron calculation, provides a unique insight into the structure of the spin polarized bands and spin gaps. We also show that the complex gap structure can be continuously tuned in energy by a controlled deposition of an alkali metal.

cond-mat.mtrl-sci↗

Ag-coverage-dependent symmetry of the electronic states of the Pt(111)-Ag-Bi interface: The ARPES view of a structural transition

We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of the underlying Ag film. We find that their symmetry changes from threefold to sixfold and back to threefold in the Ag coverage range studied. Together with previous scanning tunneling microscopy and photoelectron diffraction data, these results provide a consistent microscopic description of the coverage-dependent structural transition.

cond-mat.mtrl-sci↗

Experimental observation of thermal fluctuations in single superconducting Pb nanoparticles through tunneling measurements

An important question in the physics of superconducting nanostructures is the role of thermal fluctuations on superconductivity in the zero-dimensional limit. Here, we probe the evolution of superconductivity as a function of temperature and particle size in single, isolated Pb nanoparticles. Accurate determination of the size and shape of each nanoparticle makes our system a good model to quantitatively compare the experimental findings with theoretical predictions. In particular, we study the role of thermal fluctuations (TF) on the tunneling density of states (DOS) and the superconducting energy gap (D) in these nanoparticles. For the smallest particles, h < 13nm, we clearly observe a finite energy gap beyond Tc giving rise to a "critical region". We show explicitly through quantitative theoretical calculations that these deviations from mean-field predictions are caused by TF. Moreover, for T << Tc, where TF are negligible, and typical sizes below 20 nm, we show that D gradually decreases with reduction in particle size. This result is described by a theoretical model that includes finite size effects and zero temperature leading order corrections to the mean field formalism.

cond-mat.mes-hall↗

A Tunable Two-impurity Kondo system in an atomic point contact

Two magnetic atoms, one attached to the tip of a Scanning Tunneling Microscope (STM) and one adsorbed on a metal surface, each constituting a Kondo system, have been proposed as one of the simplest conceivable systems potentially exhibiting quantum critical behaviour. We have succeeded in implementing this concept experimentally for cobalt dimers clamped between an STM tip and a gold surface. Control of the tip-sample distance with sub-picometer resolution allows us to tune the interaction between the two cobalt atoms with unprecedented precision. Electronic transport measurements on this two-impurity Kondo system reveal a rich physical scenario which is governed by a crossover from local Kondo screening to non-local singlet formation due to antiferromagnetic coupling as a function of separation of the cobalt atoms.

cond-mat.str-el↗

Reactive chemical doping of the $Bi_2 Se_3$ topological insulator

Using angle resolved photoemission spectroscopy we studied the evolution of the surface electronic structure of the topological insulator $\text{Bi}_2\text{Se}_3$ as a function of water vapor exposure. We find that a surface reaction with water induces a band bending shifting the Dirac point deep into the occupied states and creating quantum well states with a strong Rashba-type splitting. The surface is thus not chemically inert, but the topological state remains protected. The band bending is traced back to Se-abstraction leaving positively charged vacancies at the surface. Due to the presence of water vapor, a similar effect takes place when $\text{Bi}_2\text{Se}_3$ crystals are left in vacuum or cleaved in air, which likely explains the aging effect observed in the $\text{Bi}_2\text{Se}_3$ band structure.

cond-mat.mes-hall↗

Spin and angular resolved photoemission experiments on epitaxial graphene

Our recently reported spin and angular resolved photoemission (SARPES) results on an epitaxial graphene monolayer on SiC(0001) suggested the presence of a large Rashba-type spin splitting of Δk=(0.030+-0.005)1/A [1]. Although this value was orders of magnitude larger than predicted theoretically, it could be reconciled with the line width found in conventional spin-integrated high resolution angular resolved photoemission spectroscopy (ARPES) data. Here we present novel measurements for a hydrogen intercalated quasi free-standing graphene monolayer on SiC(0001) that reveal a spin polarization signal that - when interpreted in terms of the Rashba-Bychkov effect [2,3] - corresponds to a spin splitting of Δk=(0.024+-0.005)1/A. This splitting is significantly larger than the half width at half maximum of spin-integrated high resolution ARPES measurements which is a strong indication that the measured polarization signal does not originate from a Rashba-type spin splitting of the graphene pi-bands as we suggested in our previous report [1].

cond-mat.mtrl-sci↗

Observation of shell effects in superconducting nanoparticles of Sn

In a zero-dimensional superconductor, quantum size effects(QSE) not only set the limit to superconductivity, but are also at the heart of new phenomena such as shell effects, which have been predicted to result in large enhancements of the superconducting energy gap. Here, we experimentally demonstrate these QSE through measurements on single, isolated Pb and Sn nanoparticles. In both systems superconductivity is ultimately quenched at sizes governed by the dominance of the quantum fluctuations of the order parameter. However, before the destruction of superconductivity, in Sn nanoparticles we observe giant oscillations in the superconducting energy gap with particle size leading to enhancements as large as 60%. These oscillations are the first experimental proof of coherent shell effects in nanoscale superconductors. Contrarily, we observe no such oscillations in the gap for Pb nanoparticles, which is ascribed to the suppression of shell effects for shorter coherence lengths. Our study paves the way to exploit QSE in boosting superconductivity in low-dimensional systems.

cond-mat.mes-hall↗

Tuning the spin texture in binary and ternary surface alloys on Ag(111)

Recently, a giant spin splitting has been observed in surface alloys on noble metal (111) surfaces as a result of a strong structural modification at the surface as well as the large atomic spin-orbit interaction (SOI) of the alloy atoms. These surface alloys are an ideal playground to manipulate both the size of the spin splitting as well as the position of the Fermi level as it is possible to change the atomic SOI as well as the relaxation by varying alloy atoms and substrates. Using spin- and angle-resolved photoemission spectroscopy in combination with quantitative low energy electron diffraction we have studied the mixed binary Bi(x)Sb(1-x)/Ag(111) and the mixed ternary Bi(x)Pb(y)Sb(1-x-y)/Ag(111) surface alloys where we observed a continuous evolution of the band structure with x and y.

cond-mat.mtrl-sci↗

Illuminating the dark corridor in graphene: polarization dependence of angle-resolved photoemission spectroscopy on graphene

We have used s- and p-polarized synchrotron radiation to image the electronic structure of epitaxial graphene near the K-point by angular resolved photoemission spectroscopy (ARPES). Part of the experimental Fermi surface is suppressed due to the interference of photoelectrons emitted from the two equivalent carbon atoms per unit cell of graphene's honeycomb lattice. Here we show that by rotating the polarization vector, we are able to illuminate this 'dark corridor' indicating that the present theoretical understanding is oversimplified. Our measurements are supported by first-principles photoemission calculations, which reveal that the observed effect persists in the low photon energy regime.

cond-mat.mtrl-sci↗

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-hybridized graphene layer with improved electronic properties.

cond-mat.mtrl-sci↗

The Structural Influence on the Rashba-type Spin-Splitting in Surface Alloys

The Bi/Ag(111), Pb/Ag(111), and Sb/Ag(111) surface alloys exhibit a two-dimensional band structure with a strongly enhanced Rashba-type spin-splitting, which is in part attributed to the structural asymmetry resulting from an outward relaxation of the alloy atoms. In order to gain further insight into the spin-splitting mechanism, we have experimentally determined the outward relaxation of the alloy atoms in these surface alloys using quantitative low-energy electron diffraction (LEED). The structure plays an important role in the size of the spinsplitting as it dictates the potential landscape, the symmetry as well as the orbital character. Furthermore, we discuss the band ordering of the Pb/Ag(111) surface alloy as well as the reproducible formation of Sb/Ag(111) surface alloys with unfaulted (face-centered cubic) and faulted (hexagonally close-packed) toplayer stacking.

cond-mat.mes-hall↗

Image potential states as quantum probe of graphene interfaces

Image potential states (IPSs) are electronic states localized in front of a surface in a potential well formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid a double Rydberg series of IPSs has been predicted which is in contrast to a single series present in three-dimensional solids. Here, we confirm this prediction experimentally for mono- and bilayer graphene. The IPSs of epitaxial graphene on SiC are measured by scanning tunnelling spectroscopy and the results are compared to ab-initio band structure calculations. Despite the presence of the substrate, both calculations and experimental measurements show that the first pair of the double series of IPSs survives, and eventually evolves into a single series for graphite. Thus, IPSs provide an elegant quantum probe of the interfacial coupling in graphene systems.

cond-mat.mes-hall↗

Hopf algebras and the logarithm of the S-transform in free probability

Let k be a positive integer and let G_k denote the set of non-commutative k-variable distributions μsuch that μ(X_1) = ... = μ(X_k) = 1. G_k is a group under the operation of free multiplicative convolution. We identify G_k as the group of characters of a certain Hopf algebra Y_k. Then, by using the log map from characters to infinitesimal characters of Y_k, we introduce a transform LS_μ for distributions μin G_k. The main property of the LS-transform is that it linearizes commuting products in G_k. For μin G_k, the transform LS_μ is a power series in k non-commuting indeterminates; its coefficients can be computed from the coefficients of the R-transform of μby using summations over chains in the lattices NC(n) of non-crossing partitions. In the particular case k=1 one has that Y_1 is naturally isomorphic to the Hopf algebra Sym of symmetric functions, and that the LS-transform is very closely related to the logarithm of the S-transform of Voiculescu, by the formula LS(z) = - z log S(z). In this case the group G_1 can be identified as the group of characters of Sym, in such a way that the S-transform, its reciprocal 1/S and its logarithm log S relate in a natural sense to the sequences of complete, elementary and respectively power sum symmetric functions.

math.OA↗

Atomic Hole Doping of Graphene

Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (doping) means. While gating has been successfully demonstrated for graphene flakes and epitaxial graphene on silicon carbide, the development of reliable chemical doping methods turns out to be a real challenge. In particular hole doping is an unsolved issue. So far it has only been achieved with reactive molecular adsorbates, which are largely incompatible with any device technology. Here we show by angle-resolved photoemission spectroscopy that atomic doping of an epitaxial graphene layer on a silicon carbide substrate with bismuth, antimony or gold presents effective means of p-type doping. Not only is the atomic doping the method of choice for the internal control of the carrier density. In combination with the intrinsic n-type character of epitaxial graphene on SiC, the charge carriers can be tuned from electrons to holes, without affecting the conical band structure.

cond-mat.mtrl-sci↗