arXiv subjects

Ko Mibu

Publications and source records attributed to Ko Mibu.

5 recordsLinked to original sources

arXiv2026

Amorphous Fe-Sn nanofilms for anomalous-Nernst heat-flux sensing

Amorphous magnetic films are promising for anomalous-Nernst heat-flux sensing because their low thermal conductivity can enhance the temperature gradient generated by an applied heat flux. However, amorphization often degrades electronic transport and thermoelectric properties, making it challenging to obtain a large anomalous Nernst response in structurally disordered films. Here, we demonstrate nanometer-thick amorphous Fe-Sn films as high-sensitivity anomalous-Nernst heat-flux sensing materials. By systematically controlling composition and thickness, we find that amorphous Fe-Sn nanofilms combine a large anomalous Nernst response with low thermal conductivity, resulting in a heat-flux sensitivity of 0.37 um/A. This value exceeds the sensitivities reported for both amorphous magnetic thin films and representative crystalline topological magnets. X-ray diffraction and Mossbauer spectroscopy show that the optimized films lack long-range crystallinity while retaining local Fe-Sn environments, suggesting that short-range atomic order contributes to the anomalous Nernst response in the amorphous matrix. The sensitivity is also reproduced on flexible polymer substrates, indicating compatibility with mechanically compliant device architectures. These results establish amorphous Fe-Sn nanofilms as a platform for anomalous-Nernst heat-flux sensing and provide a materials design route based on local-structure control and thermal-conductivity reduction.

cond-mat.mtrl-sci↗

arXiv2023

Control of conductivity in Fe-rich cobalt-ferrite thin films with perpendicular magnetic anisotropy

We fabricated two types of cobalt-ferrite (001) thin films, insulative Fe-rich cobalt-ferrite CoxFe3-xO4+{\delta} (I-CFO) and conductive Fe-rich cobalt-ferrite CoyFe3-yO4 (C-CFO), with perpendicular magnetic anisotropy (PMA) on MgO (001) substrates. Although the stoichiometric cobalt-ferrite is known as an insulating material, it is found that the conductivity of Fe-rich cobalt-ferrites can be controlled by changing the source materials and deposition conditions in the pulsed laser deposition technique. The I-CFO and C-CFO films exhibit PMA through the in-plane lattice distortion. We investigated the Fe-ion-specific valence states in both I-CFO and C-CFO films by M\"ossbauer spectroscopy and X-ray magnetic circular dichroism, and found that the difference in conductivity corresponds to the abundance ratio of Fe2+ state at the octahedral B-site (Oh) in the inverse spinel structure. Furthermore, first-principles calculations reproduce the changes in the density of states at the Fermi level depending on the cation vacancies at the B-site, which explains the difference in the conductivity between I-CFO and C-CFO.

cond-mat.mtrl-sci↗

arXiv2022

Origin of Perpendicular Magnetic Anisotropy in Co$_x$Fe$_{3-x}$O$_{4+\delta}$ Thin Films Studied by X-ray Magnetic Circular and Linear Dichroisms

We investigate the element-specific spin and orbital states and their roles on magnetic anisotropy in the Co-ferrite (Co$_x$Fe$_{3-x}$O$_{4+\delta}$ (001)) thin films which exhibit perpendicular magnetic anisotropy (PMA). The origin of PMA in the low $x$ region ($x$ $<$ 1) can be mainly explained by the large perpendicular orbital magnetic moments in the Co$^{2+}$ (3$d^7$) states detected by X-ray magnetic circular and linear dichroisms (XMCD/XMLD). The XMLD for a PMA film ($x=0.2$) with square hysteresis curve shows the oblate charge distribution in the Co$^{2+}$ site, which is consistent with the change in local nearest neighbor distance in Co detected by extended X-ray absorption fine structure analysis. Our finding reveals that the microscopic origin of PMA in Co-ferrite comes from the enhanced orbital magnetic moments along out-of-plane [001] direction through in-plane charge distribution by tensile strain, which adds the material functionalities in spinel ferrite thin films from the viewpoint of strain and orbital magnetic moments.

cond-mat.mtrl-sci↗

arXiv2020

Site-Selective Oxygen Vacancy Formation Derived from the Characteristic Crystal Structures of in Sn-Nb complex Oxides

Divalent tin oxides have attracted considerable attention as novel p-type oxide semiconductors, which are essential for realizing future oxide electronic devices. Recently, p-type Sn2Nb2O7 and SnNb2O6 were developed; however, enhanced hole mobility by reducing defect concentrations is required for practical use. In this work, we investigate the correlation between the formation of oxygen vacancy which may reduce the hole-generation efficiency and hole mobility, and the crystal structure in Sn-Nb complex oxides. Extended X-ray absorption fine structure spectroscopy and Rietveld analysis of x-ray diffraction revealed the preferential formation of oxygen vacancy at the O site bonded to the Sn ions in both the tin niobates. Moreover, a large amount of oxygen vacancy around the Sn ions were found in the p-type Sn2Nb2O7, thereby indicating the effect of oxygen vacancy to the low hole-generation efficiency. The dependence of the formation of oxygen vacancy on the crystal structure can be elucidated from the Sn-O bond strength that is evaluated based on the bond valence sum and Debye temperature. The differences in the bond strengths of the two Sn-Nb complex oxides are correlated through the steric hindrance of Sn2+ with asymmetric electron density distribution. This suggests the importance of the material design with a focus on the local structure around the Sn ions to prevent the formation of oxygen vacancy in p-type Sn2+ oxides.

cond-mat.mtrl-sci↗

arXiv2004

Real-space observation of current-driven domain wall motion in submicron magnetic wires

Spintronic devices, whose operation is based on the motion of a magnetic domain wall (DW), have been proposed recently. If a DW could be driven directly by flowing an electric current instead of a magnetic field, the performance and functions of such device would be drastically improved. Here we report real-space observation of the current-driven DW motion by using a well-defined single DW in a micro-fabricated magnetic wire with submicron width. Magnetic force microscopy (MFM) visualizes that a single DW introduced in the wire is displaced back and forth by positive and negative pulsed-current, respectively. We can control the DW position in the wire by tuning the intensity, the duration and the polarity of the pulsed-current. It is, thus, demonstrated that spintronic device operation by the current-driven DW motion is possible.

cond-mat.mtrl-sci↗